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    N-CHANNEL MOSFET TRANSISTOR LOW POWER Search Results

    N-CHANNEL MOSFET TRANSISTOR LOW POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL MOSFET TRANSISTOR LOW POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DMB53D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance


    Original     		PDF DMB53D0UV AEC-Q101 OT563 J-STD-020 DS31651

    Untitled

    Abstract: No abstract text available
    Text: DMB54D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and PNP Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance


    Original     		PDF DMB54D0UV AEC-Q101 OT563 J-STD-020acknowledge DS31676

    Untitled

    Abstract: No abstract text available
    Text: DMB54D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and PNP Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance


    Original     		PDF DMB54D0UDW AEC-Q101 OT-363 DS31677

    Untitled

    Abstract: No abstract text available
    Text: DMB53D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance


    Original     		PDF DMB53D0UDW AEC-Q101 OT-363 DS31675

    DMB53D0UDW

    Abstract: No abstract text available
    Text: DMB53D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance


    Original     		PDF DMB53D0UDW AEC-Q101 OT-363 J-STD-020 DS31675 DMB53D0UDW

    DMB53D0UV

    Abstract: No abstract text available
    Text: DMB53D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance


    Original     		PDF DMB53D0UV AEC-Q101 OT-563 J-STD-020 DS31651 DMB53D0UV

    J-STD-020D

    Abstract: No abstract text available
    Text: DMB54D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data N-Channel MOSFET and PNP Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max


    Original     		PDF DMB54D0UV AEC-Q101 OT-563 J-STD-020D DS31676 J-STD-020D

    DMB54D0UDW

    Abstract: J-STD-020D 220J0
    Text: DMB54D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data N-Channel MOSFET and PNP Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max


    Original     		PDF DMB54D0UDW AEC-Q101 OT-363 J-STD-020D DS31677 DMB54D0UDW J-STD-020D 220J0

    DMB53D0UDW

    Abstract: J-STD-020D
    Text: DMB53D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max


    Original     		PDF DMB53D0UDW AEC-Q101 OT-363 J-STD-020D DS31675 DMB53D0UDW J-STD-020D

    DMB53D0UV

    Abstract: J-STD-020D
    Text: DMB53D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max


    Original     		PDF DMB53D0UV AEC-Q101 OT-563 J-STD-020D DS31651 DMB53D0UV J-STD-020D

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640-P Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer


    Original     		PDF UF640-P 18OHM, UF640-P O-220 QW-R502-A17

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3416 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT3416 is advanced n-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS ON , low gate charge and low gate voltages as low


    Original     		PDF UT3416 UT3416 UT3416L-AE3-R UT3416G-AE3-R OT-23 QW-R502-325

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3416 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT3416 is advanced n-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS ON , low gate charge and low gate voltages as low


    Original     		PDF UT3416 UT3416 UT3416G-AE2-R UT3416G-AE3-R OT-23-3 OT-23 QW-R502-325

    sd 431 transistor

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4058-S15-AY


    Original     		PDF 2SK4058 2SK4058 2SK4058-S15-AY O-251 O-252 2SK4058-ZK-E1-AY 2SK4058-ZK-E2-AY O-251) sd 431 transistor

    Untitled

    Abstract: No abstract text available
    Text: PBSM5240PF 40 V, 2 A PNP low VCEsat BISS transistor with N-channel Trench MOSFET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118


    Original     		PDF PBSM5240PF OT1118

    NXP SMD ic MARKING CODE

    Abstract: No abstract text available
    Text: PBSM5240PF 40 V, 2 A PNP low VCEsat BISS transistor with N-channel Trench MOSFET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118


    Original     		PDF PBSM5240PF OT1118 NXP SMD ic MARKING CODE

    25n06

    Abstract: 25N06 MOSFET 25n06l utc25n06 d 25n06 relay 12v 100A 25n06g
    Text: UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR „ DESCRIPTION The UTC 25N06 is an N-channel enhancement mode Power MOSFET, which provides low gate charge, avalanche rugged technology, and so on.


    Original     		PDF 25N06 25N06 25N06 MOSFET 25n06l utc25n06 d 25n06 relay 12v 100A 25n06g

    UT3416L-AE3-R SOT-23

    Abstract: UT3416G-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3416 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT3416 is advanced n-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS ON , low gate charge and low gate voltages as low


    Original     		PDF UT3416 UT3416 UT3416L-AE3-R UT3416G-AE3-R OT-23 QW-R502-325 UT3416L-AE3-R SOT-23 UT3416G-AE3-R

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2722UGR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The μPA2722UGR is N-channel MOSFET optimized as low side of synchronous rectifier DC/DC converter. 8 5 1, 2, 3


    Original     		PDF PA2722UGR PA2722UGR PA2722UGR-E2-A

    Untitled

    Abstract: No abstract text available
    Text: BSS83 _ _ Jv _ MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.


    OCR Scan     		PDF BSS83 OT143

    Untitled

    Abstract: No abstract text available
    Text: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 7Z90791

    BSD12

    Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor
    Text: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 7Z907 a03ST0t. BSD12 depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor

    HPF730

    Abstract: T74 relay
    Text: HPF 730 PRELIMINARY N-CHANNEL POWER MOSFET General Description The HPF730 is a n-channel, enhancement-mode, silicon-gate field-effect transistor for use in power applications. The advanced power MOSFET has been designed to provide very low on-state resistance


    OCR Scan     		PDF HPF730 T0-220AB 4S41143 T74 relay

    HPF730

    Abstract: power relay N-channel mosfet
    Text: HPF730 PRELIMINARY N-CHANNEL POWER MOSFET General Description The HPF730 is a n-channel, enhancement-mode, silicon-gate field-effect transistor for use in power applications. The advanced power MOSFET has been designed to provide very low on-state resistance


    OCR Scan     		PDF HPF730 O-220AB 000G347 power relay N-channel mosfet