Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UT3416 Preliminary Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UTC UT3416 is advanced n-channel enhancement MOSFET which can provide the designer with the best combination
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Original
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UT3416
UT3416
UT3416L-AE3at
QW-R502-325
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PDF
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UT3416L-AE3-R SOT-23
Abstract: UT3416G-AE3-R
Text: UNISONIC TECHNOLOGIES CO., LTD UT3416 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3416 is advanced n-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS ON , low gate charge and low gate voltages as low
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Original
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UT3416
UT3416
UT3416L-AE3-R
UT3416G-AE3-R
OT-23
QW-R502-325
UT3416L-AE3-R SOT-23
UT3416G-AE3-R
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT3416 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3416 is advanced n-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS ON , low gate charge and low gate voltages as low
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Original
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UT3416
UT3416
UT3416L-AE3-R
UT3416G-AE3-R
OT-23
QW-R502-325
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT3416-H Power MOSFET 6.7A, 20V N-CHANNEL MOSFET DESCRIPTION The UTC UT3416-H is an N-Channel MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance and high switching speed, etc.
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Original
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UT3416-H
UT3416-H
UT3416G-AE2-R
OT-23-3
QW-R208-052
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT3416 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3416 is advanced n-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS ON , low gate charge and low gate voltages as low
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Original
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UT3416
UT3416
UT3416G-AE2-R
UT3416G-AE3-R
OT-23-3
OT-23
QW-R502-325
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PDF
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