Untitled
Abstract: No abstract text available
Text: NX4108 1A SYNCHRONOUS BUCK SWITCHER WITH FET ON BOARD PRODUCTION DATA SHEET Pb Free Product FEATURES DESCRIPTION n n n n n The NX4108 is a current mode PWM buck switcher with internal compensation, can provide up to 1A output current with FET on board. It operates from 2.8V to 5.5V
|
Original
|
NX4108
NX4108
OT23-5L
DO1608C-222
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LX13097 1A SYNCHRONOUS BUCK SWITCHER WITH FET ON BOARD ADVANCE DATA SHEET Pb Free Product FEATURES DESCRIPTION n n n n n The LX13097 is a current mode PWM buck switcher with internal compensation, can provide up to 1A output current with FET on board. It operates from 2.8V to 5.5V
|
Original
|
LX13097
LX13097
OT23-5L
DO1608C-222
|
PDF
|
Analog devices TOP marking Information
Abstract: 105k u LX13097CSE timer for garden DO1608C-222 C top marking c2 sot23 ARG1 DO1608C-222 LX13097 high power fet amplifier schematic 105k 1Kv
Text: LX13097 1A SYNCHRONOUS BUCK SWITCHER WITH FET ON BOARD ADVANCE DATA SHEET Pb Free Product DESCRIPTION FEATURES n n n n n The LX13097 is a current mode PWM buck switcher with internal compensation, can provide up to 1A output current with FET on board. It operates from 2.8V to 5.5V
|
Original
|
LX13097
LX13097
OT23-5L
DO1608C-222
Analog devices TOP marking Information
105k u
LX13097CSE
timer for garden
DO1608C-222 C
top marking c2 sot23 ARG1
DO1608C-222
high power fet amplifier schematic
105k 1Kv
|
PDF
|
NX4108CZ1TR
Abstract: DO1608C-222 NX4108 high power fet amplifier schematic DO1608C-222 C
Text: NX4108 1A SYNCHRONOUS BUCK SWITCHER WITH FET ON BOARD PRODUCTION DATA SHEET Pb Free Product DESCRIPTION FEATURES n n n n n The NX4108 is a current mode PWM buck switcher with internal compensation, can provide up to 1A output current with FET on board. It operates from 2.8V to 5.5V
|
Original
|
NX4108
NX4108
OT23-5L
DO1608C-222
NX4108CZ1TR
DO1608C-222
high power fet amplifier schematic
DO1608C-222 C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NX4110 1A SYNCHRONOUS BUCK SWITCHER WITH FET ON BOARD PRODUCTION DATA SHEET Pb Free Product FEATURES DESCRIPTION n n n n The NX4110 is a current mode PWM buck switcher with internal compensation, can provide up to 1A output current with FET on board. It operates from 2.8V to 5.5V
|
Original
|
NX4110
NX4110
OT23-5L
controll2/30/09
|
PDF
|
NX4110
Abstract: No abstract text available
Text: NX4110 1A SYNCHRONOUS BUCK SWITCHER WITH FET ON BOARD PRODUCTION DATA SHEET Pb Free Product DESCRIPTION FEATURES n n n n The NX4110 is a current mode PWM buck switcher with internal compensation, can provide up to 1A output current with FET on board. It operates from 2.8V to 5.5V
|
Original
|
NX4110
NX4110
OT23-5L
controll/09
|
PDF
|
XP133A0245SR
Abstract: PCB405
Text: XP133A0245SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.045Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A0245SR is a N-Channel Power MOS FET with low on-state
|
Original
|
XP133A0245SR
XP133A0245SR
PCB405
|
PDF
|
Pch MOS FET
Abstract: US6M2 TUMT6
Text: US6M2 Transistors 2.5V Drive Nch+Pch MOS FET US6M2 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. (2) (1) (3) 1pin mark 0.2 1.7 zFeatures 1) Nch MOS FET and Pch MOS FET are put in TUMT6 package.
|
Original
|
85Max.
15Max.
Pch MOS FET
US6M2
TUMT6
|
PDF
|
QS6M4
Abstract: TSMT6 Pch MOS FET m04 fet
Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOS FET QS6M4 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOS FET with a Nch MOS FET in a single TSMT6 package.
|
Original
|
|
PDF
|
NES1417B-30
Abstract: nec 1441
Text: DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1417B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1417B-30 is power GaAs FET which provides high output power and high gain in the 1.4-1.7GHz 24±0.3
|
Original
|
NES1417B-30
NES1417B-30
nec 1441
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0613JSP R07DS0874EJ0100 Rev.1.00 Aug 29, 2012 60 V - 10 A - N Channel MOS FET Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
|
Original
|
RJF0613JSP
R07DS0874EJ0100
|
PDF
|
2SK1959
Abstract: C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1959 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1959 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS in mm it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an
|
Original
|
2SK1959
2SK1959
C10535E
MEI-1202
|
PDF
|
d1333
Abstract: 2SK3113 2SK3113-Z 2SK3113 equivalent
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristic, and 2SK3113
|
Original
|
2SK3113
2SK3113
O-251
2SK3113-Z
O-252
O-251)
d1333
2SK3113-Z
2SK3113 equivalent
|
PDF
|
2SK3113 equivalent
Abstract: 2SK3113 2SK3113-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristic, and 2SK3113
|
Original
|
2SK3113
2SK3113
O-251
2SK3113-Z
O-252
O-251)
2SK3113 equivalent
2SK3113-Z
|
PDF
|
|
|
PA1572
Abstract: C10535E C10943X MEI-1202 PT2320 PA1572BH
Text: DATA SHEET Compound Field Effect Power Transistor µPA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The µPA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and
|
Original
|
PA1572B
PA1572B
PA1572BH
10Pin
PA1572
C10535E
C10943X
MEI-1202
PT2320
PA1572BH
|
PDF
|
PA1552BH
Abstract: PA1552 IEI-1213 MEI-1202 MF-1134 PA155
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1552B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The µPA1552B is N-channel Power MOS FET Array in millimeters that built in 4 circuits designed, for solenoid, motor and
|
Original
|
PA1552B
PA1552B
PA1552BH
PA1552BH
PA1552
IEI-1213
MEI-1202
MF-1134
PA155
|
PDF
|
marking s21b
Abstract: Transformer sepic LM347
Text: LM3488 High Efficiency Low-Side N-Channel Controller for Switching Regulators General Description The LM3488 is a versatile Low-Side N-FET high performance controller for switching regulators. It is suitable for use in topologies requiring low side FET, such as boost,
|
Original
|
LM3488
100kHz
marking s21b
Transformer sepic
LM347
|
PDF
|
s21b
Abstract: LM3488 Transformer sepic LM3478 LM3488MM LM3488MMX
Text: LM3488 High Efficiency Low-Side N-Channel Controller for Switching Regulators General Description The LM3488 is a versatile Low-Side N-FET high performance controller for switching regulators. It is suitable for use in topologies requiring low side FET, such as boost,
|
Original
|
LM3488
LM3488
100kHz
CSP-9-111C2)
CSP-9-111S2)
CSP-9-111S2.
s21b
Transformer sepic
LM3478
LM3488MM
LM3488MMX
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LM2727,LM2737 LM2727/LM2737 N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages Literature Number: SNVS205C LM2727/LM2737 N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages General Description Features The LM2727 and LM2737 are high-speed, synchronous,
|
Original
|
LM2727
LM2737
LM2727/LM2737
SNVS205C
LM2737
|
PDF
|
cd 1619 CP AUDIO
Abstract: cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
|
OCR Scan
|
NE850R599A
NE850R599A
CODE-99
cd 1619 CP AUDIO
cd 1691 cp
IC cd 1619 CP
ic HT 8970
cd 1619 CP
of cd 1619 cp
ic SL 1626
HT 25-19
5942
nec 8725
|
PDF
|
a2388
Abstract: FT5FC 2SK2071-01L 30S3 T151
Text: 2SK2071-01L. S FUJI POWER MOS-FET N-C HANNEL SILICON POWER MOS-FET FAP-IIA SERIES I features Outline Drawings »High speed switching >Low on-resistance >N:> secondary breakdown »Low driving power 1High voltage ' V ;s- ± 3 0 V Guarantee 1A/alanche-proof I Applications
|
OCR Scan
|
2SK2071-01L,
a2388
FT5FC
2SK2071-01L
30S3
T151
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band
|
OCR Scan
|
NEZ3642-4D,
NEZ4450-4D,
NEZ5964ter
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 36V 3742 o r p>o<*u c t' ° " Pd '» n lS c o n t v nn u e 3 .7 ' 4.2G H z BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3742 is an internally impedance-matched GaAs power FET especially designed for use In 3.7 ~ 4.2
|
OCR Scan
|
MGFC36V3742
ltem-01:
Item-51
27C102P,
RV-15
|
PDF
|
2SK770
Abstract: No abstract text available
Text: P ow er F-MOS FET 2SK770 2SK770 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON resistan ce RDs on : RDS (on) = 3 .5 il (typ.) • High sw itching ra te : tf= 3 0 n s (typ.) • No secondary breakdow n • High breakdow n voltage
|
OCR Scan
|
2SK770
O-220
VDO-I50V
2SK770
|
PDF
|
