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    N CHANNEL MOSFET 500 MA 400 V Search Results

    N CHANNEL MOSFET 500 MA 400 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL MOSFET 500 MA 400 V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400


    Original
    PDF Si1016X 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SC-89

    Abstract: Si1016X
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400


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    PDF Si1016X 2002/95/EC OT-563 SC-89 11-Mar-11 SC-89

    Untitled

    Abstract: No abstract text available
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400


    Original
    PDF Si1016X 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si1016x-t1-ge3

    Abstract: No abstract text available
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V


    Original
    PDF Si1016X OT-563 SC-89 18-Jul-08 si1016x-t1-ge3

    SC-89

    Abstract: Si1016X Si1016X-T1-E3
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V


    Original
    PDF Si1016X OT-563 SC-89 08-Apr-05 SC-89 Si1016X-T1-E3

    si1016x-t1-ge3

    Abstract: SC-89 Si1016X Si1016X-T1-E3
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V


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    PDF Si1016X OT-563 SC-89 18-Jul-08 si1016x-t1-ge3 SC-89 Si1016X-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD210800/ALD210800A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V QUAD HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ALD210800A/ALD210800 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These


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    PDF ALD210800/ALD210800A ALD210800A/ALD210800 ALD110800A/ALD110800

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD212900/ALD212900A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V DUAL HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ® ALD212900A/ALD212900 precision N-Channel EPAD MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These


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    PDF ALD212900/ALD212900A ALD212900A/ALD212900 ALD110900A/ALD110900 ALD212900A/ ALD212900

    P-CHANNEL MOSFET

    Abstract: computer motherboard circuit diagram
    Text: MC33566 Smart Voltage Regulator for Peripheral Card Applications The MC33566 Low Dropout Regulator is designed for computer peripheral card applications complying with the instantly available requirements as specified by ACPI objectives. The MC33566 permits


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    PDF MC33566 P-CHANNEL MOSFET computer motherboard circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-3A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/150 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED


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    PDF FM600TU-3A Amperes/150

    power mosfet 80v 150a

    Abstract: rad7 n channel mosfet 500 mA 400 v
    Text: FM600TU-3A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-Pack High Power MOSFET Module 300 Amperes/150 Volts A D F G G Q H K L P AB E N AE J 7 B Z AB AC P X (11 PLACES) L M R AD N 1 13 14 T W B A S AF 6 12 U


    Original
    PDF FM600TU-3A Amperes/150 power mosfet 80v 150a rad7 n channel mosfet 500 mA 400 v

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-3A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 300 Amperes/150 Volts A D F G G H K Q L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED


    Original
    PDF FM600TU-3A Amperes/150

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-3A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/150 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED


    Original
    PDF FM600TU-3A Amperes/150 MOS01

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-3A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/150 Volts A D G F G Q N J H M L K X (11 PLACES) L P R 7 B E 1 W T B A S 12 TC MEASURED POINT 6 Y Q K M M X V U C C


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    PDF FM600TU-3A Amperes/150

    J964

    Abstract: No abstract text available
    Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


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    PDF AGR21045EF J964

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 300 Amperes/100 Volts A D F G G H K Q L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED


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    PDF FM600TU-2A Amperes/100

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-07A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 300 Amperes/75 Volts A D F G G H K Q L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED


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    PDF FM600TU-07A Amperes/75

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-2A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/100 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED


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    PDF FM600TU-2A Amperes/100

    welder mosfet 150a

    Abstract: mosfet Inverter Welder welder inverter mosfet FM600TU-07A welder mosfet 300A mosfet circuit power mosfet module
    Text: FM600TU-07A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-Pack High Power MOSFET Module 300 Amperes/75 Volts A D F G G Q H K L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED


    Original
    PDF FM600TU-07A Amperes/75 welder mosfet 150a mosfet Inverter Welder welder inverter mosfet FM600TU-07A welder mosfet 300A mosfet circuit power mosfet module

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-Pack High Power MOSFET Module 300 Amperes/100 Volts A D F G G Q H K L P AB E N AE J 7 B Z AB AC P X (11 PLACES) L M R AD N 1 13 14 T W B A S AF 6 12 U


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    PDF FM600TU-2A Amperes/100

    "MOSFET Module"

    Abstract: E80276 FM600TU-3A "MOSFET Module" fm600tu-3a PU90
    Text: MITSUBISHI <MOSFET MODULE> FM600TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM600TU-3A ● ID rms . 300A ● VDSS . 150V ● Insulated


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    PDF FM600TU-3A E80276 E80271 "MOSFET Module" E80276 FM600TU-3A "MOSFET Module" fm600tu-3a PU90

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-07A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/75 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED


    Original
    PDF FM600TU-07A Amperes/75

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-07A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/75 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED


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    PDF FM600TU-07A Amperes/75

    da qz transistor

    Abstract: transistor qz n channel mosfet 500 mA 400 v N and P MOSFET
    Text: A dvanced I / I 1 lia Z S S / L in e a r ALD1107/ALD1117 D e v ic e s , I n c . QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS The ALD1107/ALD1117 are monolithic quad/dual P-channel enhance­ ment mode matched MOSFET transistor arrays intended fora broad range


    OCR Scan
    PDF ALD1107/ALD1117 ALD1107/ALD1117 ALD1106 ALD1116 ALD1101 ALD1103) ALD1102 da qz transistor transistor qz n channel mosfet 500 mA 400 v N and P MOSFET