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Advanced Semiconductor Inc AGR21045EF RF MOSFET Transistors 2.11-2.17GHz 10Watt Gain 14.5dB
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Mouser Electronics	AGR21045EF					1 $51.65 10 $43.89 100 $39.58 1000 $38.17 10000 $38.17	Get Quote

AGR21045EF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGR21045EF		Agere Systems	FET Transistor, 45W, 2.110GHz-2.170GHz, N-Channel E-Mode, Lateral MOSFET Transistor		Original	PDF
AGR21045EF		Agere Systems	45 W, 2.110 GHz - 2.170 GHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF

AGR21045EF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AGR21045EF Abstract: AGR21045XF JESD22-C101A Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	PDF	AGR21045EF AGR21045EF DS04-241RFPP DS04-178RFPP) AGR21045XF JESD22-C101A
J964 Abstract: AGR21045EF AGR21045XF JESD22-C101A Text: Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	PDF	AGR21045EF AGR21045EF CGR21045EF AGR21045XF 21045F 12-digit J964 AGR21045XF JESD22-C101A
J964 Abstract: No abstract text available Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	PDF	AGR21045EF J964
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet August 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21045E AGR21045EU AGR21045EF DS02-380RFPP DS02-276RFPP)
AGR21045E Abstract: AGR21045EF AGR21045EU JESD22-C101A 178rf Text: Data Sheet May 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21045E AGR21045E AGR21045EU AGR21045EF car18109-9138 DS04-178RFPP DS04-164RFPP) AGR21045EF AGR21045EU JESD22-C101A 178rf
AGR21045E Abstract: AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems Text: Preliminary Data Sheet April 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21045E AGR21045E AGR21045EU AGR21045EF DS04-164RFPP DS04-037RFPP) AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	PDF	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
AGR21045E Abstract: AGR21045EF AGR21045EU JESD22-C101A IMD3 equivalent Text: Preliminary Data Sheet November 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21045E AGR21045E AGR21045EU AGR21045EF DS04-037RFPP DS02-380RFPP) AGR21045EF AGR21045EU JESD22-C101A IMD3 equivalent