Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    N CHANNEL 20V D-S 3.9A Search Results

    N CHANNEL 20V D-S 3.9A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL 20V D-S 3.9A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		PDF ST2318SRG ST2318SRG OT-23 OT-23

    N mosfet sot-23

    Abstract: sot-23 MARKING CODE 23A marking sot-23
    Text: ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		PDF ST2318SRG ST2318SRG OT-23 OT-23 N mosfet sot-23 sot-23 MARKING CODE 23A marking sot-23

    NTE2945

    Abstract: No abstract text available
    Text: NTE2945 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low Static Drain–Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability


    Original     		PDF NTE2945 NTE2945

    3f381

    Abstract: zxmhc3f381n8 ZXMHC3F381N8TC
    Text: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V


    Original     		PDF ZXMHC3F381N8 ZXMHC3F381N8TC 3f381 zxmhc3f381n8 ZXMHC3F381N8TC

    3f381

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V


    Original     		PDF ZXMHC3F381N8 3f381

    3f381

    Abstract: ZXMHC3F381N8TC ZXMHC3F381N8 1000T
    Text: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V


    Original     		PDF ZXMHC3F381N8 ZXMHC3F381N8TC 522-ZXMHC3F381N8TC ZXMHC3F381N8TC 3f381 ZXMHC3F381N8 1000T

    Untitled

    Abstract: No abstract text available
    Text: DMP4047LFDE 40V P-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS -40V Package 33mΩ @ VGS = -10V U-DFN2020-6 Type E 50mΩ @ VGS = -4.5V • • • • • • • ID max TA = +25°C RDS(ON) max -6A -4.9A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMP4047LFDE U-DFN2020-6 DS35777

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS ID RDS(on) TA = 25°C 350mΩ @ VGS= -10V -3.9A 450mΩ @ VGS= -6.0V -3.4A -100V • Fast switching speed • Low gate drive


    Original     		PDF ZXMP10A17K AEC-Q101 -100V DS32028

    zxmp 17

    Abstract: ZXMP 10A17 10A17 ZXMP10A17K 4.5V TO 100V INPUT REGULATOR
    Text: A Product Line of Diodes Incorporated ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 350mΩ @ VGS= -10V -3.9A 450mΩ @ VGS= -6.0V


    Original     		PDF ZXMP10A17K AEC-Q101 -100V DS32028 zxmp 17 ZXMP 10A17 10A17 ZXMP10A17K 4.5V TO 100V INPUT REGULATOR

    Untitled

    Abstract: No abstract text available
    Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF SUM202MN KSD-T6T001-001

    SSD2021

    Abstract: PN channel MOSFET 10A
    Text: SSD2021 Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1,D2 D1,D2 ! Improved High Temperature Reliability


    Original     		PDF SSD2021 SSD2021 PN channel MOSFET 10A

    Untitled

    Abstract: No abstract text available
    Text: DMP4047LFDE 40V P-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 33mΩ @ VGS = -10V -6A 50mΩ @ VGS = -4.5V -4.9A • • • • • • • -40V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm


    Original     		PDF DMP4047LFDE AEC-Q101 DS35777

    Untitled

    Abstract: No abstract text available
    Text: DMP4047LFDE 40V P-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS -40V Features Package 33mΩ @ VGS = -10V U-DFN2020-6 Type E 50mΩ @ VGS = -4.5V • • • • • • • ID max TA = +25°C RDS(ON) max -6A -4.9A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMP4047LFDE U-DFN2020-6 AEC-Q101 DS35777

    APM9928

    Abstract: P-Channel MOSFET code L 1A APM9928K STD-020C
    Text: APM9928K Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel D1 D1 20V/5A, RDS(ON) =35mΩ(typ.) @ VGS = 4.5V RDS(ON) =50mΩ(typ.) @ VGS = 3V • S1 G1 S2 G2 P-Channel Top View of SOP − 8 -20V/-3.2A, RDS(ON) =80mΩ(typ.) @ VGS =-4.5V


    Original     		PDF APM9928K -20V/-3 APM9928 P-Channel MOSFET code L 1A APM9928K STD-020C

    PWM MTD3055

    Abstract: MTD3055 FP1 C16
    Text: NX2715 SINGLE CHANNEL MOBILE PWM CONTROLLER WITH NMOS LDO CONTROLLER, PGOOD INDICATOR AND ENABLE ADVANCE DATA SHEET Pb Free Product DESCRIPTION The NX2715 controller IC is a compact synchronous Buck controller IC with 16 lead MLPQ package designed for step down DC to DC converter applications with feedforward functionality. Voltage


    Original     		PDF NX2715 NX2715 PWM MTD3055 MTD3055 FP1 C16

    f65k

    Abstract: LTC3868
    Text: LTC3868-1 Low IQ, Dual 2-Phase Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n n The LTC 3868-1 is a high performance dual step-down switching regulator controller that drives all N-channel synchronous power MOSFET stages. A constant frequency


    Original     		PDF LTC3868-1 850kHz. LTC38681 50kHz 900kHz, 140kHz 650kHz, 100kHz f65k LTC3868

    Untitled

    Abstract: No abstract text available
    Text: LTC3868-1 Low IQ, Dual 2-Phase Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n n The LTC 3868-1 is a high performance dual step-down switching regulator controller that drives all N-channel synchronous power MOSFET stages. A constant frequency


    Original     		PDF LTC3868-1 850kHz. 140kHz 650kHz, LT3845A 100kHz 500kHz, TSSOP-16 LTC3824 200kHz

    f105k

    Abstract: No abstract text available
    Text: LTC3858-1 Low IQ, Dual 2-Phase Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n n The LTC 3858-1 is a high performance dual step-down switching regulator controller that drives all N-channel synchronous power MOSFET stages. A constant frequency


    Original     		PDF LTC3858-1 850kHz. LTC3835/LTC3835-1 140kHz 650kHz, LT3845A LTC3824 100kHz 500kHz, f105k

    Untitled

    Abstract: No abstract text available
    Text: LTC3858-1 Low IQ, Dual 2-Phase Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n n The LTC 3858-1 is a high performance dual step-down switching regulator controller that drives all N-channel synchronous power MOSFET stages. A constant frequency


    Original     		PDF LTC3858-1 850kHz. 140kHz 650kHz, LT3845A 100kHz 500kHz, TSSOP-16 LTC3824 200kHz

    LTC3857GN-1

    Abstract: No abstract text available
    Text: LTC3857-1 Low IQ, Dual, 2-Phase Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n The LTC 3857-1 is a high performance dual step-down switching regulator controller that drives all N-channel synchronous power MOSFET stages. A constant frequency


    Original     		PDF LTC3857-1 850kHz. 50kHz 900kHz, 140kHz 650kHz, 100kHz LTC3857GN-1

    LTC3857GN-1

    Abstract: LTC3857 LTC3857-1 LTC3857E-1 LTC3857EGN-1 LTC3857I-1 LTC3857IGN-1
    Text: LTC3857-1 Low IQ, Dual, 2-Phase Synchronous Step-Down Controller DESCRIPTION FEATURES Low Operating IQ: 50µA One Channel On Wide Output Voltage Range: 0.8V ≤ VOUT ≤ 24V Wide VIN Range: 4V to 38V RSENSE or DCR Current Sensing Out-of-Phase Controllers Reduce Required Input


    Original     		PDF LTC3857-1 75kHz-850kHz) 50kHz-900kHz) 140kHz 650kHz, LT3845 100kHz 500kHz, TSSOP-16 LTC3824 LTC3857GN-1 LTC3857 LTC3857-1 LTC3857E-1 LTC3857EGN-1 LTC3857I-1 LTC3857IGN-1

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design A Product Line of Diodes Incorporated Use DMP10H400SK3 ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C


    Original     		PDF DMP10H400SK3 ZXMP10A17K AEC-Q101 -100V O252-3L DS32028

    Untitled

    Abstract: No abstract text available
    Text: LTC3857-1 Low IQ, Dual, 2-Phase Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n The LTC 3857-1 is a high performance dual step-down switching regulator controller that drives all N-channel synchronous power MOSFET stages. A constant frequency


    Original     		PDF LTC3857-1 850kHz. 140kHz 650kHz, LT3845 100kHz 500kHz, TSSOP-16 LTC3824 200kHz

    RJK0305

    Abstract: LTC3868-1 LTC3868E-1 LTC3868EGN-1 LTC3868EUFD-1 LTC3868GN-1 LTC3868IGN-1 LTC3868IUFD-1
    Text: LTC3868-1 Low IQ, Dual 2-Phase Synchronous Step-Down Controller Description Features n n n n n n n n n n n n n n n n n n The LTC 3868-1 is a high performance dual step-down switching regulator controller that drives all N-channel synchronous power MOSFET stages. A constant frequency


    Original     		PDF LTC3868-1 850kHz. MSOP-16E, QFN-16 LTC3851A/ LTC3851A-1 250kHz 750kHz, QFN-16, RJK0305 LTC3868-1 LTC3868E-1 LTC3868EGN-1 LTC3868EUFD-1 LTC3868GN-1 LTC3868IGN-1 LTC3868IUFD-1