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    Untitled

    Abstract: No abstract text available
    Text: DMP4047LFDE 40V P-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 33mΩ @ VGS = -10V -6A 50mΩ @ VGS = -4.5V -4.9A • • • • • • • -40V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm


    Original     		PDF DMP4047LFDE AEC-Q101 DS35777

    Untitled

    Abstract: No abstract text available
    Text: DMP4047LFDE 40V P-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS -40V Package 33mΩ @ VGS = -10V U-DFN2020-6 Type E 50mΩ @ VGS = -4.5V • • • • • • • ID max TA = +25°C RDS(ON) max -6A -4.9A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMP4047LFDE U-DFN2020-6 DS35777

    Untitled

    Abstract: No abstract text available
    Text: DMP4047LFDE 40V P-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS -40V Features Package 33mΩ @ VGS = -10V U-DFN2020-6 Type E 50mΩ @ VGS = -4.5V • • • • • • • ID max TA = +25°C RDS(ON) max -6A -4.9A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMP4047LFDE U-DFN2020-6 AEC-Q101 DS35777