MX-1610
Abstract: intel 28f200 db86082 mx1610 intel 80586 MX28F002 MXIC flash disk controller db86082b MX26C1000A KM29N32000
Text: APPLICATION NOTES 1. TYPICAL NONVOLATILE MEMORY APPLICATION 2.) ON-BOARD PROGRAMMING DESIGN CONSIDERATIONS FOR THE MX26C512A 3.) ON-BOARD PROGRAMMING OF THE MX26C1000A 4.) IN-CIRCUIT PROGRAMMING OF THE MX26C1024A 5.) 2M FLASH MEMORY 6.) 8M FLASH MEMORY 7.) MX25L4004A 4M-BIT 4MX1) CMOS SERIAL FLASH MEMORY
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MX26C512A
MX26C1000A
MX26C1024A
MX25L4004A
MX29F1610
MX26C512A,
512K-bit
MX26C512A
MX9691
MX-1610
intel 28f200
db86082
mx1610
intel 80586
MX28F002
MXIC flash disk controller
db86082b
MX26C1000A
KM29N32000
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25U4035
Abstract: 25U1635E uson+8+land+pattern
Text: The Ultimate Performance Flash Memory Macronix Serial Multi I/O MXSMIOTM Flash www.macronix.com Contents Why Use MXSMIOTM Family? 3 ● Advantages of Macronix Serial Multi-I/O Flash Family 4 ● Worldwide NOR Flash Trend 5 ● The Fastest Performance Serial Flash on the Market
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MXIC flash disk controller
Abstract: macronix mxic dsp MX93011 HD11 MX51L9692 MXIC sequential
Text: PRELIMINARY MX51L9692 Multiple Interface Flash and MROM Memory Controller 1. Features Flash/MROM Memory Interface: • Support all the control signals to execute read/write/ erase operation for Samsung's, Toshiba's, and Hitachi's serial type Flash memory.
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MX51L9692
256Mbit
64Mbit/128Mbit/256Mbit/512Mbit
PM0935
MXIC flash disk controller
macronix mxic dsp
MX93011
HD11
MX51L9692
MXIC sequential
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mother board intel block diagram
Abstract: GeForce2 MX 400 sis 962 sis 962l p4p800 sis962L AU6331 sis 964 sandisk micro sd kingston micro SD card
Text: Test Report Au6331 - MBL Chip USB2.0 Muliti-Flash Memory Card Reader Controller Test Result Pass July 26, 2005 Tester Claude: Product Part Number Au6331A31-MBL Golden Sample Number Au6331A31-MBL Test Result Summary： NO 1 Test Item Hardware Result Microsoft OS.
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Au6331
Au6331A31-MBL
mother board intel block diagram
GeForce2 MX 400
sis 962
sis 962l
p4p800
sis962L
sis 964
sandisk micro sd
kingston micro SD card
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MX29F1610A
Abstract: MX29F1610B PM05
Text: Introduction Selection Guide PRELIMINARY MX29F1610A/B 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:100,000 cycles • Fast access time: 70/90/120ns • Sector erase architecture
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MX29F1610A/B
16M-BIT
70/90/120ns
MX29F1610A
MX29F1610B
PM05
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MX29F1610B
Abstract: MX29F1610A
Text: PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns
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MX29F1610A/B
16M-BIT
90/100/120ns
May/13/1998
Nov/10/1998
MAR/31/1999
MAY/18/1999
JUN/20/2000
MX29F1610B
MX29F1610A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/120ns
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MX29F1610A/B
16M-BIT
90/120ns
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MX29F1610
Abstract: MX29F1610B MX29F1610A A14A
Text: INDEX PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 70/90/120ns
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MX29F1610A/B
16M-BIT
70/90/120ns
MX29F1610
MX29F1610B
MX29F1610A
A14A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns
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MX29F1610A
16M-BIT
90/100/120ns
Nov/10/1998
MAR/31/1999
MAY/18/1999
JUN/20/2000
NOV/16/2000
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MX29F1610B
Abstract: No abstract text available
Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns
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MX29F1610A
16M-BIT
90/100/120ns
Nov/10/1998
MAR/31/1999
MAY/18/1999
JUN/20/2000
NOV/16/2000
JUN/15/2001
NOV/21/2002
MX29F1610B
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MX29F1610B
Abstract: MX29F1610A
Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns
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MX29F1610A
16M-BIT
90/100/120ns
Nov/10/1998
MAR/31/1999
MAY/18/1999
JUN/20/2000
NOV/16/2000
JUN/15/2001
MX29F1610B
MX29F1610A
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MX29F1610
Abstract: 29F1610-12 00F1H
Text: Introduction Selection Guide MX29F1610 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:10,000 cycles • Fast access time: 120/150ns • Sector erase architecture
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MX29F1610
16M-BIT
120/150ns
150ms
MX29F1610
29F1610-12
00F1H
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29F8100-12
Abstract: MX29F8100 MXIC flash disk controller
Text: INDEX PRELIMINARY MX29F8100 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY FEATURES • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns Sector erase architecture - 8 equal sectors of 128k bytes each
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MX29F8100
8/512K
120/150ns
PM0262
29F8100-12
MX29F8100
MXIC flash disk controller
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Untitled
Abstract: No abstract text available
Text: MX29F1610 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:10,000 cycles Fast access time: 100/120ns Sector erase architecture - 16 equal sectors of 128k bytes each
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MX29F1610
16M-BIT
100/120ns
150ms
PM0260
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29F8100-12
Abstract: MX29F8100
Text: Introduction Selection Guide PRELIMINARY MX29F8100 8M-BIT 1M x 8/512K x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns
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MX29F8100
8/512K
120/150ns
oper887
CA95131
29F8100-12
MX29F8100
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lm121ss1t53
Abstract: ambit t62i172 TX31D35VC1CAA Fujitsu Siemens inverter AMBIT inverter South Bridge ALI M1535 JU226A252FC TX*D*CAA ali m1535 ambit t62
Text: TravelMate 200 Service Guide Service guide files and updates are available on the AIPG/CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: 49.40G02.001 DOC. NO.: SG337.0008A PRINTED IN TAIWAN Copyright Copyright 1999 by Acer Incorporated. All rights reserved. No part of this publication may be reproduced,
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40G02
SG337
lm121ss1t53
ambit t62i172
TX31D35VC1CAA
Fujitsu Siemens inverter
AMBIT inverter
South Bridge ALI M1535
JU226A252FC
TX*D*CAA
ali m1535
ambit t62
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lm121ss1t53
Abstract: ambit t62 JU-226A252FC ali m1535 TX31D35VC1CAA South Bridge ALI M1535 AMBIT inverter mxic lot number on the labels MXIC Lot Code Identification TX31D*VC1CAA
Text: TravelMate 200 Service Guide Service guide files and updates are available on the AIPG/CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: 49.50F02.001 DOC. NO.: SG351 PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on TravelMate 200 service guide.
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50F02
SG351
lm121ss1t53
ambit t62
JU-226A252FC
ali m1535
TX31D35VC1CAA
South Bridge ALI M1535
AMBIT inverter
mxic lot number on the labels
MXIC Lot Code Identification
TX31D*VC1CAA
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Untitled
Abstract: No abstract text available
Text: MXIC M X2 9 FI 6 1 OA/ B 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 00,000 cycles Fast access time: 70/90/120ns Sector erase architecture
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70/90/120ns
MX29F1610A/
44-PIN
48-PIN
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00F1H
Abstract: No abstract text available
Text: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles
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MX29F1
100/120/150ns
-100mA
100mA
100ns
00F1H
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Untitled
Abstract: No abstract text available
Text: MXIC MX29F1610 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 0,000 cycles Fast access time: 120/150ns Sector erase architecture
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MX29F1610
120/150ns
150ms
Int03/11/1998
44-PIN
48-PIN
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29F1 61 OA/B 16M-BIT [2M x8/1 M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • Page program operation - Internal address and data latches for 128 bytes/64 words per page - Page programming time: 0.9ms typical - Byte programming time: 7us in average
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MX29F1
16M-BIT
bytes/64
70/90/120ns
48-PIN
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Q20G
Abstract: 00F1H MX-2S
Text: is M « r r c a M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPRO M commands Minimum 1,000/10,000 write/erase cycles Fast access time: 100/120/150ns Sector erase architecture - 16 equal sectors of 128k bytes each
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100/120/150ns
-100mA
100mA
100ns
Q20G
00F1H
MX-2S
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mxab
Abstract: IX-29
Text: _ _ _ _ _ _ _ _ _M X 2 FEATURES • • • • • • • • • 9 F8 1 OO 8 M - B r r t 'IM x 8 / 5 * 1 H K x I S C M O S S IN G L E V O L T A G E F L A S H E E P R O M 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles
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100/120/150ns
-100mA
100mA
100ns
mxab
IX-29
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00F1H
Abstract: No abstract text available
Text: TM M X29F161Q MACftOMX, INC. 1 B IS A -B n tS M x 8 / 1 M x 1 B C M 0 8 S IN G L E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 100,000 write/erase cycles
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X29F161Q
120ns
X29F1610
-100mA
100mA
00F1H
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