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    TIM8596-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM8596-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 6.0 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    Original     		TIM8596-8 2-11C1B) MW51190196 TIM8596-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM8596-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P-|dB = 39.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 6.0 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM8596-8 2-11C1B) MW51190196 1EH725D PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PidB = 39.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 6.0 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM8596-8 CharM8596-8 2-11C1B) MW51190196 PDF