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    Text: TOSHIBA TIM8596-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P-|dB = 39.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 6.0 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM8596-8 2-11C1B) MW51190196 1EH725D PDF