MV1662 Search Results

MV1662 diode

Abstract: MV1662 equivalent mv1662 2n3137 MV1652 MV1654 MV1656 MV1658 MV1660 MV1664
Contextual Info: MV 1652 SILICON MV1654 MV1656 MV1658 MV 1660 MV1662 MV 1664 MV1666 Silicon epicap epitaxial passivated tuning diodes designed for general tuning, trimming and AFC applica­ tions at low radio frequencies. CASE 146 M A X IM U M R A T IN G S Rating Symbol

"Varactor Diodes"

Abstract: MV1656 MV1662 MV1652 MV1654 MV1658 MV1660 MV1664 MV1666
Contextual Info: ABRUPT VARACTOR DIODES MV1652 - MV1666 PART NUMBER MV1652 MV1654 MV1656 MV1658 MV1660 MV1662 MV1664 MV1666 C T DIODE CAPACITANCE Vr = 4 Vdc, f = 1 MHz pF MIN NOM MAX 108 120 135 132 150 165 162 180 198 180 200 220 198 220 242 225 250 275 243 270 300 297

MV1652

Abstract: MV1654 MV1656 MV1658 MV1660 MV1662 MV1664 MV1666
Contextual Info: KNOX SEMICONDUCTOR, INC. ABRUPT VARACTOR DIODES MV1652 - MV1666 TYPE NUMBER MV1652 MV1654 MV1656 MV1658 MV1660 MV1662 MV1664 MV1666 CT DIODE CAPACITANCE Vr = - 4 Vdc, f = 1 MHz pF MIN NOM MAX 108 120 135 132 150 165 162 180 198 180 200 220 198 220 242 225

Contextual Info: MV1662CCHIP Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.250p‘ C1/C2 Min. Capacitance Ratio2.3Â V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min.150 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleChip

Contextual Info: MV1662CHIP Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.250p C1/C2 Min. Capacitance Ratio2.3Â V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min.150 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleChip

Contextual Info: MSI ELECTRONICS INC 3SE £ E3 5b5bMbb 000036b T E M S I T - 0 7 -/7 - HERMETICALLY SEALED GL AS S PACKAGED TUNING DIODES 08 D S D elect ABRUPT - HYPERABRU PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

30223 varactor sod323

Abstract: Zener c10v KSV1402-1412 SMV30224 30223 sod 323 1N5455 sod-523 varactor diodes MV1662 varactor diode 1N5469 varactor 1N5144
Contextual Info: VARACTORS SMV1401, 1402, 1403, 1404, 1405, 1406, 1407, 1408, 1409, 1410, 1411, SMV1412 TMV1401, 1402, 1403, 1404, 1405, 1406, 1407, 1408, 1409, 1410, 1411, TMV1412 SMV20411, 20412, 20413, 20414, SMV20415 SMV20422, 20423, 20424, SMV20425 SMV20432, 20433, 20434, 20435, 20436, SMV20437

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

Contextual Info: K n o x S e m ic o n d u c t o r , I n c ABRUPT VARACTOR DIODES MV1652 - MV1666 TYPE NUMBER Ct d i o d e c a p a c i t a n c e Vr = - 4 Vdc, f = 1 MHz pF MIN NOM MAX Q, QUALITY FACTOR Vr = - 4 Vdc f = 20 MHz MIN MAX REVERSE CAPACITANCE RATIO TYPICAL VOLTAGE

Contextual Info: MOTOROLA SC i DI ODES/OPTO* i 6367255 MOTOROLA 34 SC »ËJb3b72SS iDIODES/OPTO 34C 0030100 38108 D | D T 'ô l'l* ! SILICON TUNING DIODE DICE continued) * MVC1652 DIE NO. — SERIES LINE SOURCE — DV81 This die provides performance equal to or better than that of

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . ABRUPT VARACTOR DIODES MV1652 - MV1666 DIODE CAPACITANCE Vr = - 4 Vdc, f = 1 MHz PF MIN NOM MAX 120 108 135 132 150 165 162 180 198 200 220 180 220 242 198 250 275 225 270 300 243 297 330 363 Ct TYPE NUMBER MV1652

HA1930

Contextual Info: O ^ G S D elect; HERMETICALLY SEALED G L A SS PACKAGED TUNING DIODES HYPERABRUPT Wr ABRUPT E L E C T R IC A L CH A R A CTER ISTICS T a = 25° C unless otherwise noted GENERAL APPLICATIONS Oiode Cap. IC T)* pf Q4 $ 50 MHz RATIO C2/C20 min/typ NO LOW INDUCTANCE

G603A

Abstract: S0171 DIODE 1N54 HA1930A 1N547S 10YD 1N5470A G605A GDE 6A SQ1213A
Contextual Info: U S I ELECTRONICS INC 3SE £ E3 SbSbMbb 0 0 0 0 3 6 b T BU SI T -07-/7 - D « a D elect HERM ETICALLY S E A LE D G L A S S P A CK A G ED TUNING D IO D ES A BRU PT - H YPER A B R U PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted