MTM23123 Search Results

MTM23123

Contextual Info: Silicon MOSFETs Small Signal MTM23123 Silicon P-channel MOSFET For digital circuits Unit: mm • Features  Low voltage drive (2.5 V, 4 V)  Realization of low on-resistance, using extremely fine process (14 mΩ/mm /mm2) 2.1±0.1 0.9+0.2 –0.1 5°

mtm231230

Contextual Info: Attains the industry’s lowest on-resistance with an SMini 2120 package size. Small, Low On-Resistance MOSFET Series „ Overview The new MTM23123/MTM23110/MTM23223/MTM23224 MOSFETs contribute to reduced dimensions and weight as well as lower power consumption for cellular phones, digital still cameras,

Contextual Info: MTM23123 Silicon P-channel MOSFET For switching • Overview  Package MTM23123 is N-channel MOS FET for load switch circuits.  Code SMini3-G1-B  Pin Name 1: Gate 2: Source 3: Drain  Features  Low voltage drive 2.5 V, 4 V  Realization of low on-resistance, using extremely fine process

Contextual Info: Doc No. TT4-EA-10702 Revision. 2 Product Standards MOS FET MTM761230LBF MTM761230LBF Silicon P-channel MOSFET Unit : mm For Switching 2.0 0.2 MTM23123 in WSMini6 type package 0.13 6 5 4 1 2 3 • Features 1.7 2.1  Low Drain-source On-state Resistance : RDS on typ. = 36 m  (VGS = -4 V)

Contextual Info: Doc No. TT4-EA-14177 Revision. 2 Product Standards MOS FET MTM231232LBF MTM231232LBF Silicon P-channel MOSFET Unit : mm For Switching 2.0 0.3 MTM76123 in SMini3 type package 0.15 3  Low Drain-source On-state Resistance : RDS on typ. = 40 m  (VGS = -4 V)

mtm231230l

Abstract: mtm231230
Contextual Info: Attains the industry’s lowest on-resistance with an SMini 2120 package size. Small, Low On-Resistance MOSFET Series „ Overview The new MTM23123/MTM23110/MTM23223MOSFETs contribute to reduced dimensions and weight as well as lower power consumption for cellular phones, digital still cameras, digital video

MTM23123

Contextual Info: MTM23123 Silicon P-channel MOSFET For switching • Overview  Package MTM23123 is P-channel MOS FET for load switch circuits.  Code SMini3-G1-B  Pin Name 1: Gate 2: Source 3: Drain  Features  Low voltage drive 2.5 V, 4 V  Realization of low on-resistance, using extremely fine process

MTM23123

Contextual Info: Reference Spice Parameter MTM23123 Device symbol Product name: MTM23123 Product type: MOSFET 3 1 2 Parameters *$ .SUBCKT MTM23123 1 2 3 M_Q1 D 1 2 2 MINT D_D1 3 2 DBD Caution : Applicable at 25 degree celsius only. D_D2 3 1 DGD D_D3 1 X DZD D_D4 2 X DZD R_R1 D 3 0.02 TC=0.0059

Contextual Info: Silicon MOSFETs Small Signal MTM23123 Silicon P-channel MOSFET For digital circuits Unit: mm • Features  Low voltage drive (2.5 V, 4 V)  Realization of low on-resistance, using extremely fine process 2.1±0.1 0.9+0.2 –0.1 5° 1.25±0.10 0.9±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) MTM23123 Silicon P-channel MOSFET For digital circuits Unit: mm • Features  Low voltage drive (2.5 V, 4 V)  Realization of low on-resistance, using extremely fine process

p-channel mosfet BL

Abstract: MTM23123
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) MTM23123 Silicon P-channel MOSFET For digital circuits Unit: mm • Features  Low voltage drive (2.5 V, 4 V)  Realization of low on-resistance, using extremely fine process

MTM231230L

Abstract: mtm231230 MTM23223 MTM23110 MTM23123 MTM23224
Contextual Info: Attains the industry’s lowest on-resistance with an SMini 2120 package size. Small, Low On-Resistance MOSFET Series „ Overview The new MTM23123/MTM23110/MTM23223/MTM23224 MOSFETs contribute to reduced dimensions and weight as well as lower power consumption for cellular phones, digital still cameras,

MTM23123

Contextual Info: Silicon MOSFETs Small Signal MTM23123 Silicon P-channel MOSFET For digital circuits • Features  Package  Low voltage drive (2.5 V, 4 V)  Realization of low on-resistance, using extremely fine process Symbol Rating Unit Drain-source surrender voltage

Contextual Info: Doc No. TA4-EA-06224 Revision. 1 Product Standards AN32258A http://www.semicon.panasonic.co.jp/en/ INTEGRATED WIRELESS POWER SUPPLY RECEIVER, Qi WIRELESS POWER CONSORTIUM COMPLIANT FEATURES DESCRIPTION  Integrated Wireless Power Receiver Solution  WPC Ver. 1.1 Compliant

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MN864779

Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
Contextual Info: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Contextual Info: Product Standards Tentative Ver.1.11 AN32258A http://www.semicon.panasonic.co.jp/en/ INTEGRATED WIRELESS POWER SUPPLY RECEIVER, Qi WIRELESS POWER CONSORTIUM COMPLIANT FEATURES DESCRIPTION  Integrated Wireless Power Receiver Solution  WPC Ver. 1.1 Compliant