Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MTH13N50E Search Results

    MTH13N50E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MTH13N50E

    Contextual Info: MOTOROLA SC ÍXSTRS/R F> 2bE D • b3b?2S4 0 0 ^ 0 4 ñ Order this data sheet by MTH13N50E/D MOTOROLA E3 SEMICONDUCTOR TECHNICAL DATA MTH13N50E Designer's Data Sheet TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate T M O S POWER FET


    OCR Scan     		MTH13N50E/D MTH13N50E swi065 O-218AC C66760 MTH13N50E PDF

    MTH13N50

    Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
    Contextual Info: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:


    Original     		MJE8502A O-220AB/TO-220: MJF16010A O-254 MJF16018 MJF16206 MTH13N50 MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50 PDF

    MTH13N50E

    Abstract: MTG9N50E MTH13N50 AN569 DS3903 mosfet ss 544
    Contextual Info: Order this data sheet by MTG9N50E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Full Pak Isolated TM OS E-FET High Energy Pow er M O SFET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES rDS on = 0.4 OHM MAX 500 VOLTS This advanced high voltage TM O S E-FET is designed to w ith­


    OCR Scan     		MTG9N50E/D MTG9N50E/D MTH13N50E MTG9N50E MTH13N50 AN569 DS3903 mosfet ss 544 PDF