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Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC SSE ]> b i l l i g 0004GGS ¿OI MICRON 256K X IPIRN MT8S25632 32 SRAM MODULE - ' " P J t - i ' 5 - 1 4 SRAM MODULE 256K X 32 SRAM FEATURES • High speed: 15*, 20,25 and 35ns • High-density 1MB design • High-performance, low-power, CMOS double-metal
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0004GGS
MT8S25632
64-Pin
MT6S2S632
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marking wp1
Abstract: MTBS25632
Text: MT8S25632 2 5 6 K X 32 S R A M M O D U L E I^ IIC IR a íM SRAM MODULE 256K x 32 SRAM FEATURES • High speed: 15, 20 and 25ns • High-density 1MB design • High-performance, low-power, CMOS double-metal process _ • Single +5V ±10% power supply • Easy memory expansion with CE and OE functions
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OCR Scan
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PDF
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MT8S25632
64-Pin
MTBS25632
MT9S25632
marking wp1
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