MT58LC64K18C4 Search Results

Contextual Info: ML *««93 ADVANCE MICRON I 64K SEMICONDUCTOR. MC SYNCHRONOUS SRAM X MT58LC64K18C4 18 SYNCHRONOUS SRAM 6 4 K x 18 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS AND BURST COUNTER FEATURES • • • • • • • • • • • • • Fast access times: 7 ,1 0 ,1 2 and 15ns

64K18

Contextual Info: lu llC R O N 64K MT58LC64K18C4 SRAM X 1 8 SY NC BU RS T 64K x 18 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access tim es: 4.5, 5, 6, 7 and 8ns

Contextual Info: SUPERSEDED BY MT58LC64K18C5 MT58LC64K18C4 64K X 18 SY N C BU R ST SRAM MICRON I 'ECIIMOIOGY tHC 64K x 18 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • P IN A S S IG N M E N T T o p V ie w

Contextual Info: MT58LC64K18C4 64K X 18 SYNCBURST SRAM M IC R O N SYNCHRONOUS SRAM 64K x 18 SRAM FEATURES • • • • • • • • • • • • • • • • • PIN ASSIGNMENT (Top View Fast access times: 4 .5 ,5 ,6 ,7 and 8ns Fast OE access time: 5 and 6ns

Contextual Info: MICRON SEMICONDUCTOR INC b?E T> m blllSMT 000=1552 7^ HMRN ADVANCE M IC R O N 64K SYNCHRONOUS SRAM X MT58LC64K18C4 18 SYNCHRONOUS SRAM 64K x 18 SRAM FEATURES • • • • • • • • • • • • • Fast access times: 7 ,10,12 and 15ns Fast OE: 5 ,6 ,7 and 8ns

Contextual Info: ADVANCE MT58LC64K18C4 64K X 18 SYNCHRONOUS SRAM M IC R O N 64K x 18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS AND BURST COUNTER FEATURES • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 7 ,1 0 ,1 2 and 15ns

c1906

Abstract: c1906 equivalent
Contextual Info: SUPERSEDED BY MT58LC64K18C5 MT58LC64K18C4 64K X 18 SYNCBURST SRAM p iC R D N 64K x 18 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • Fast access tim es: 4 .5 ,5 , 6, 7 an d 8ns Fast O E # access tim e: 5 an d 6n s

Contextual Info: PRELIMINARY M I l^ n n N 64K +3.3VSUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS AND BURST COUNTER FEATURES • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4 .5 ,5 ,6 ,7 and 8ns Fast OE: 5 and 6ns Single +3.3V ±5% pow er supply 5V-tolerant I /O

Contextual Info: PRELIMINARY |m ir " C a r n |M I iib n w iii MT2LSYT3272T4/T6, MT4LSY6472T4/T6 32K 64K x 72 SYNCHRONOUS SRAM MODULE 32K, 64K x 72 SRAM SYNCHRONOUS A n A R j i H iin r M OnAM MUL/U Lrt- +3.3V s u p p l y , f u l l y r e g is t e r e d INPUTS, OUTPUTS AND BURST COUNTER

up down counter using IC 7476

Abstract: pin diagram for IC 7476 and pin diagram of IC 7476
Contextual Info: ADVANCE U II^ C a r n N ^ MT2LSYT3272C4, MT4LSYT6472C4 32K, 64K x 72 SYNCHRONOUS SRAM MODULE SEMICONDUCTOR It SYNCHRONOUS SRAM MODULE 32K, 64K x 72 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS, OUTPUTS AND BURST COUNTER FEATURES PIN ASSIGNMENT Top View • 80 position dual read -o u t dual in-line m e m o ry m odule

and pin diagram of IC 7476

Abstract: SRAM 256KB 6ns
Contextual Info: ADVANCE M I^ E 3 Q N I MT2LSYT3272C4, MT4LSYT6472C4 32K, 64K X 72 SYNCHRONOUS SRAM MODULE SYNCHRONOUS SRAM MODULE 32K, 64K x 72 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS, OUTPUTS AND BURST COUNTER FEATURES PIN ASSIGNMENT Top View 160-Lead, Dual Read-out DIMM

C19H

Abstract: as89
Contextual Info: p iic m S22B t M EG SYNCHRONOUS SRAM DIR q is i SRAM DIE 1 meg syn c h r o n o u s SRAM 64K X 18 , 32K x 32 a n d 32K x 36 FEATURES • • • • • Single 3.3V ±0.2V p o w er supply 5V -tolerant I /O C om m on d ata Inp u ts and data outp u ts In d iv id u al BYTE WRITE control an d GLOBAL WRITE

TN0003

Contextual Info: S25A 1 M E G S Y N C H R O N O U S S R A M DIE SRAM DIE 1 m eg s y n c h r o n o u s BURST SRAM 64K x 18, 32K x 32 and 32K x 36 FEATURES DIE DATA B A S E S25A DIE OUTLINE see page 5 • 3.3V +10%/-5% power supply forD7 version • 3.3V ±5% power supply for C4 or B2 version

Contextual Info: PRELIMINARY l^ lld R O N 64K 64K x 18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS AND BURST COUNTER FEATURES • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4.5, 5, 6, 7 and 8ns Fast OE: 5 and 6ns

72T4

Abstract: 4118 sram
Contextual Info: PRELIMINARY |\A |^ E a r ~ |S | I MT2LSYT3272T4/T6, MT4LSY6472T4/T6 32K, 64K X 72 SYNCHRONOUS SRAM MODULE SYNCHRONOUS 32K, 64K x 72 SRAM o +3.3V SUPPLY, FULLY REGISTERED INPUTS, OUTPUTS AND BURST COUNTER n A A il H I lA n ill r- o K A M IV IU IJU Lt FEATURES

SP 0323

Abstract: t994
Contextual Info: MI CR ON S E M I C O N D U C T O R INC bTE D H b l l l S M I G O Ü T i S S bflS M M R N AVAILABLE AUGUST 94 MICRON I S22A MEG SR A M DIE SEMICONDUCTOR INC. SRAM DIE 1 MEG SRAM 6 4 K X 1 8 and 3 2 K x 3 6 FEATURES • • • • • Single 3.3V +/-5% power supply