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    MT58L512Y32P Price and Stock

    Micron Technology Inc MT58L512Y32PT-6

    MT58L512Y32 - Cache SRAM, 512KX32, 3.5ns PQFP100
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MT58L512Y32PT-6 1 1
    • 1 $12.3
    • 10 $12.3
    • 100 $11.56
    • 1000 $10.46
    • 10000 $10.46
    		Buy Now

    MT58L512Y32P Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT58L512Y32P Micron 18Mb: 1 Meg x 18, 512K x 32/36 Pipelined, SCD SyncBurst SRAM 3.3V VDD, 3.3V or 2.5V I/O 2.5V VDD, 2.5V I/O Original PDF
    MT58L512Y32PF-10 Micron 18Mb SYNCBURST SRAM Original PDF
    MT58L512Y32PF-5 Micron 18Mb SYNCBURST SRAM Original PDF
    MT58L512Y32PF-6 Micron 18Mb SYNCBURST SRAM Original PDF
    MT58L512Y32PT-10 Micron 18Mb SYNCBURST SRAM Original PDF
    MT58L512Y32PT-5 Micron 18Mb SYNCBURST SRAM Original PDF
    MT58L512Y32PT-6 Micron 18Mb SYNCBURST SRAM Original PDF

    MT58L512Y32P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect


    Original     		PDF Apr/6/00 Jan/18/00 Nov/11/99 MT58L1MY18P MT58L1MY18P

    bfm 11a

    Abstract: BFM 4a
    Text: PRELIMINARY‡ 0.16µm Process 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O Features Figure 1: 100-Pin TQFP


    Original     		PDF MT58L1MY18P1 bfm 11a BFM 4a

    BGA 2J marking code

    Abstract: No abstract text available
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect


    Original     		PDF MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 100-Pin Apr/6/00 Jan/18/00 Nov/11/99 BGA 2J marking code

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 0.16µm Process 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O Features Figure 1: 100-Pin TQFP


    Original     		PDF MT58L1MY18P1

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES


    Original     		PDF 100-pin 165-p. Apr/13/00 Apr/6/00 Jan/18/00 MT58L1MY18P, Nov/11/99 MT58L1MY18P

    MS216

    Abstract: No abstract text available
    Text: ADVANCE‡ 0.16µm Process 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O FEATURES 100-Pin TQFP1


    Original     		PDF MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 100-Pin MT58L1MY18P1 MS216

    78 ball fbga thermal resistance

    Abstract: No abstract text available
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect


    Original     		PDF Apr/6/00 Jan/18/00 Nov/11/99 MT58L1MY18P MT58L1MY18P 78 ball fbga thermal resistance

    Untitled

    Abstract: No abstract text available
    Text: 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O Features Figure 1: 100-Pin TQFP • Fast clock and OE# access times


    Original     		PDF MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58L1MY18P1

    Untitled

    Abstract: No abstract text available
    Text: 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES 100-Pin TQFP1


    Original     		PDF MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 100-Pin Apr/6/00 Jan/18/00 Nov/11/99

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect


    Original     		PDF Apr/6/00 Jan/18/00 Nov/11/99 MT58L1MY18P MT58L1MY18P

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 0.16µm Process 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O Features Figure 1: 100-Pin TQFP


    Original     		PDF MT58L1MY18P1

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES


    Original     		PDF 100-pin 165-p. Apr/13/00 Apr/6/00 Jan/18/00 MT58L1MY18P, Nov/11/99 MT58L1MY18P

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect


    Original     		PDF MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 100-Pin Apr/6/00 Jan/18/00 Nov/11/99

    TMS320C55X

    Abstract: C5000 MT58L128V32P1 MT58L256L32P MT58L512Y32P TMS320VC5510
    Text: Application Report SPRA722A - June 2003 Interfacing TMS320VC5510 to SBSRAM Bill Winderweedle C5000 Hardware Applications ABSTRACT The TMS320C55x C55x External Memory Interface (EMIF) supports a glueless interface to high-density and high-speed synchronous burst static random access memories


    Original     		PDF SPRA722A TMS320VC5510 C5000 TMS320C55x TMS320C55X MT58L128V32P1 MT58L256L32P MT58L512Y32P

    TMS320C55X

    Abstract: C55X TMS320VC55x C5000 MT58L128V32P1 MT58L256L32P MT58L512Y32P MT58L64L32P
    Text: Application Report SPRA722 - March 2001 Interfacing TMS320C55x to SBSRAM Bill Winderweedle C5000 Hardware Applications ABSTRACT The TMS320C55x C55x External Memory Interface (EMIF) supports a glueless interface to high-density and high-speed synchronous burst static random access memories


    Original     		PDF SPRA722 TMS320C55x C5000 TMS320C55x C55X TMS320VC55x MT58L128V32P1 MT58L256L32P MT58L512Y32P MT58L64L32P