MT4C4M4A1TG-6S
Abstract: MT4LC4M4B1TG-6S
Text: 4 MEG x 4 FPM DRAM MT4LC4M4B1, MT4C4M4B1 MT4LC4M4A1, MT4C4M4A1 DRAM For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Top View • Industry-standard x4 pinout, timing, functions,
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mt4lc4m4e8TG
Abstract: No abstract text available
Text: 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. MT4LC4M4E8, MT4C4M4E8 MT4LC4M4E9, MT4C4M4E9 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x4 pinout, timing, functions and packages • State-of-the-art, high-performance, low-power CMOS silicon-gate process
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24/26-Pin
mt4lc4m4e8TG
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Untitled
Abstract: No abstract text available
Text: 4 MEG x 4 FPM DRAM TECHNOLOGY, INC. MT4LC4M4B1, MT4C4M4B1 MT4LC4M4A1, MT4C4M4A1 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • State-of-the-art, high-performance, low power CMOS silicon-gate process • Single power supply +3.3V ±0.3V or +5V ±10%
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24/26-Pin
NC/A11
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Untitled
Abstract: No abstract text available
Text: OBSOLETE 4 MEG x 4 FPM DRAM MT4LC4M4B1, MT4C4M4B1 MT4LC4M4A1, MT4C4M4A1 DRAM For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Top View • Industry-standard x4 pinout, timing, functions,
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E D blllSM'i ODD7bflS 522 • MRN PRELIMINARY MT4C4M4A1/B1 4 MEG X 4 DRAM I^ IC R O N DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, tim ing, functions and packages • High-performance CM OS silicon-gate process • Single power supply : +5V ±10%
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OCR Scan
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325mW
048-cycle
096-cycle
24-Pin
A11/NC
A0-A11;
0007bT4
A0-A11
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4c4m4a
Abstract: Y7A MARKING
Text: 4 MEG X 4 FPM DRAM I^ IIC R C IN MT4LC4M4B1,MT4C4M4B1 MT4LC4M4A1,MT4C4M4A1 n R AM ^ r » »1 FEATURES • Industry-standard x4 pinout, timing, functions and packages • State-of-the-art, high-performance, low power CMOS silicon-gate process • Single power supply +3.3V ±0.3V or +5V ±10%
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OCR Scan
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24/26-Pin
4c4m4a
Y7A MARKING
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Untitled
Abstract: No abstract text available
Text: MICRON I MT4C4M4E8 S 4 MEG X 4 DRAM TECHNOLOGY, INC. DRAM 4 MEG x 4 DRAM 2K REFRESH, 5V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply
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OCR Scan
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250mW
048-cycle
128ms
00157bfl
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MT4C4M4
Abstract: No abstract text available
Text: PRELIMINARY MT4C4M4B1 4 MEG X 4 DRAM MICRON I ItChNOLOCY INC. DRAM 4 MEG x 4 DRAM 5V, FAST PAGE MODE PIN ASSIGNMENT Top View • JEDEC- and industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5.0V ±10% power supply
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OCR Scan
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250mW
048-cycle
24/26-Pin
001551b
MT4C4M4
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Untitled
Abstract: No abstract text available
Text: MICRON I MT4C4M4E9 S 4 MEG X 4 DRAM TECHNOLOGY, MC. DRAM 4 MEG x 4 DRAM 4K REFRESH, 5V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply
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OCR Scan
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220mW
096-cycle
128ms
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Untitled
Abstract: No abstract text available
Text: 4 MEG x 4 EDO DRAM MICRON TECHNOLOGY. INC. lì R A M L S r T M IV I MT4LC4M4E8, MT4C4M4E8 MT4LC4M4E9, MT4C4M4E9 FEATURES PIN ASSIGNMENT Top View • Industry-standard x4 pinout, timing, functions and packages • State-of-the-art high-performance, low power CMOS
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OCR Scan
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mt4lc4m4e8dj-6
Abstract: No abstract text available
Text: 4 MEG x 4 EDO DRAM V U C Z R O N D R A M L /n # 4 IV I MT4LC4M4E8, MT4C4M4E8 MT4LC4M4E9, MT4C4M4E9 FEATURES PIN ASSIGNMENT (Top View OPTIONS 24/26-Pin SOJ (DA-2) V cc q 1 • DQ1 [ 2 DQ2 d 3 WE# : 4 RAS# : 5 NC/A11 c 6 A10 A0 A1 A2 A3 V cc c q : L q [ B
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OCR Scan
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24/26-Pin
mt4lc4m4e8dj-6
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PDF
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Untitled
Abstract: No abstract text available
Text: MT4C4M4A1/B1 4 MEG X 4 DRAM MICRON DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CM OS silicon-gate process • Single pow er supply: +5V ±10% • Low power, 3mW standby; 200mW active, typical (A l
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OCR Scan
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200mW
048-cycle
096-cycle
24/28-Pin
A11/NC
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PDF
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4C4M4B1
Abstract: No abstract text available
Text: PRELIM INARY MT4C4M4B1 4 MEG X 4 DRAM l^ iiC R n r s j DRAM 4 MEG x 4 DRAM 5V, FAST PAGE MODE PIN A SSIG N M E N T Top View • JEDEC- and industry-standard x4 pinout, timing, functions and packages • High-performance CM OS silicon-gate process • Single +5.0V ±10% pow er supply
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OCR Scan
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250mW
048-cycle
24/26-Pin
4C4M4B1
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Untitled
Abstract: No abstract text available
Text: M IC R O N D24A 16 MEG DRAM DIE I DRAM DIE 16 MEG DRAM MT4C4M4B1D24A, MT4LC4M4B1D24A MT4LC2M8B1D24A, MT4LC1M16C3D24A FEATURES DIE OUTLINE Top View • • • • • • Single 5.0V (x4 only) or 3.3V (x4, x8, x l6) pow er supply Industry-standard x4, x8, x l6 timing and functions
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OCR Scan
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MT4C4M4B1D24A,
MT4LC4M4B1D24A
MT4LC2M8B1D24A,
MT4LC1M16C3D24A
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Untitled
Abstract: No abstract text available
Text: 4 MEG X 4 FPM DRAM MICRON I TECHNOLOGY. INC. MT4LC4M4B1, MT4C4M4B1 MT4LC4M4A1, MT4C4M4A1 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • State-of-the-art, high-perform ance, low pow er CMOS silicon-gate process • Single pow er supply +3.3V +0.3V or +5V +10%
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OCR Scan
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24/26-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4C4M4D1 4 MEG X 4 DRAM M IC R O N DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single power supply: +5V ±10% • Low power, 5mW standby; 325mW active, typical
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OCR Scan
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325mW
096-cycle
24-Pin
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PDF
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MT4C4M4
Abstract: No abstract text available
Text: MT4C4M4A1 S 4 MEG X 4 DRAM MICRON I TECHNOLOGY, WC. DRAM 4 MEG x 4 DRAM 4K REFRESH, 5.0V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC- and industry-standard x4 pinout, timing, functions and packages • High-perform ance CMOS silicon-gate process
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OCR Scan
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200mW
096-cycle
128ms
MT4C4M4
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4C4M4A1/B1 4 MEG X 4 DRAM MICRON DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single power supply : +5V ±10% • Low power, 3mW standby; 325mW active, typical Al
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OCR Scan
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325mW
048-cycle
096-cycle
24-Pin
A11/NC
A0-A11;
A0-A11
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4C4M4D1 4 MEG X 4 DRAM |U |IC=RqN 4 MEG DRAM X 4 DRAM FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access - 6 - 7 • Packages Plastic SOJ (400 mil) V cc DQ1 DQ2 WE RAS A11/N C [ [ [ [ [ [ 1 2 3 4 5 6
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OCR Scan
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A11/N
275mW
096-cycle
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PDF
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Untitled
Abstract: No abstract text available
Text: M IC R O N » D24A 16 MEG DRAM DIE SEMCQNDUCTDR n c DRAM DIE 16 MEG DRAM MT4C4M4B1D24A, MT4LC4M4B1D24A MT4LC2M8B1D24A, MT4LC1M16C3D24A FEATURES DIE OUTLINE Top View • • • • • • Single 5.0V (x4 only) or 3.3V (x4, x8, xl6) power supply Industry-standard x4, x8, xl6 timing and functions
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OCR Scan
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MT4C4M4B1D24A,
MT4LC4M4B1D24A
MT4LC2M8B1D24A,
MT4LC1M16C3D24A
PHYSICAL531
150mm
262x569
134x134
114jim
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A9181
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC SSE D • b ll lS 4el 000S7b3 777 M H R N AUVANCE MT4C4M4A1 Bl 883C 4 MEG X 4 DRAM I^ISCIRON MILITARY DRAM 4 MEG X 4 DRAM 5.0V FAST PAGE MODE • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process
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OCR Scan
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000S7b3
330mW
048-cycle
096-cycle
24-Pin
13and
096cycle
A9181
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PDF
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S9618
Abstract: No abstract text available
Text: MT4C4M4B1 S 4 MEG X 4 DRAM MICRON I TECHNOLOGY, INC. DRAM 4 MEG x 4 DRAM 2K REFRESH, 5.0V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES * JEDEC- and industry-standard x4 pinout, timing, functions and packages * High-performance CMOS silicon-gate process
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OCR Scan
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230mW
048-cycle
24/26-Pin
S9618
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PDF
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Untitled
Abstract: No abstract text available
Text: MT4C4M4B1 S 4 MEG X 4 DRAM MICRON I TECHNOLOGY, INC. DRAM 4 MEG x 4 DRAM 2K REFRESH, 5.0V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC- and industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process
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OCR Scan
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230mW
048-cycle
24/26-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4C4M4A1 /B1 S 4 MEG X 4 DRAM MICRON B SEMKONOUCTOR. INC. 4 MEG x 4 DRAM DRAM 5.0V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC- and industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process
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OCR Scan
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275mW
048-cycle
096-cyde
24/26-Pin
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PDF
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