Untitled
Abstract: No abstract text available
Text: MICRON 256K DRAM MT4C4258 X 4 DRAM 256K X 4 DRAM DRAM STATIC COLUMN FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V +10% power supply • Low power, 3mW standby; 175mW active, typical
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MT4C4258
175mW
512-cycle
20-Pin
100ns
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cc680
Abstract: No abstract text available
Text: M IC R O N 256K DRAM MT4C4258 X 4 DRAM 256K x 4 DRAM • DRAM STATIC COLUMN FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CM O S silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical
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MT4C4258
175mW
512-cycle
20-Pin
C1992,
MUC4258
cc680
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DA 11341
Abstract: B1374 S2026 MT4C4258
Text: MICRON MT4C4258 256K X 4 DRAM I DRAM 256K X 4 DRAM DRAM STATIC COLUMN FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175m W active, typical
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MT4C4258
512-cycle
20-Pin
MT4C42S0
C1994.
DA 11341
B1374
S2026
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MT4C4258
Abstract: No abstract text available
Text: |v i i c : r o n 256K 256K DRAM MT4C4258 X 4 DRAM 4 DRAM X DRAM STATIC-COLUMN FEATURES PIN ASSIGNMENT Top View • Industry-standard x4 pinout, timing, functions and packages • High-performance CM OS silicon-gate process • Single +5V ±10% power supply
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MT4C4258
175mW
512-cycle
20-Pin
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Untitled
Abstract: No abstract text available
Text: [MICRON 256K DRAM MT4C4258 X 4 DRAM 256K X 4 DRAM DRAM STATIC-COLUMN FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical
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OCR Scan
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PDF
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MT4C4258
175mW
512-cycle
20-Pin
MT4C4256
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Untitled
Abstract: No abstract text available
Text: MICRON 256K 256K DRAM X MT4C4258 X 4 DRAM 4 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT (Top View • Industry-standard x4 pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3m W standby; 175mW active, typical
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PDF
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MT4C4258
175mW
512-cycle
20-Pin
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Untitled
Abstract: No abstract text available
Text: MT4C4256 L 256K X 4 DRAM I^IICRON DRAM 256K X 4 DRAM FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V +10% power supply • Low power, .3mW standby; 150mW active, typical
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MT4C4256
150mW
512-cycle
20-Pin
MT4C4256L
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MN42C4256SJ-8
Abstract: MN42C4256SJ-10 20PIN MN41C4258-10 MN41C4258L-10 MN41C4258L-8 MN41C4258SJ-10 MN41C4258SJ-8 MS514256-10 MS514256-12
Text: — 1M m & it £ ì& m m cc> CMOS Dynamic X 'í V * TRAC max ns TRCY nin (ns) TCAD T A H min rain (ns) (ns) R A M ( 2 6 21 4 4 x 4 ) y M TP min (ns) m y inin (ns) TDH min (ns) TRWC •in (ns) V D D or V C C (V) 20PIN A M IDD max ( A) I DD STANDBY ( I SB/1 SB2)
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20PIN
MN41C4258-10
MN41C4258L-10
MT4C4258-10
MT4C4258-12
MT4C4258-8
MT4C4260-10
MN42C4256SJ-8
MN42C4256SJ-10
MN41C4258L-8
MN41C4258SJ-10
MN41C4258SJ-8
MS514256-10
MS514256-12
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sun hold RAS 0610
Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
sun hold RAS 0610
oki Logic
Motorola transistor 7144
MSC2304
M5M41000
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1003 ic
Abstract: No abstract text available
Text: M I CR ON T E C H N O L O G Y INC blllS4T O Q O S i n 3flE 5 .T - * L - Z l- \7 L-M.V4I r i^ L i f i iVin'' ?f üT"“r^TBfPWr' " 'frítá ¡rtíl' nirrï~~¿‘Ti ri H •MRN - im fúki -v^ DRAM 256K X 4 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT Top View
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175mW
512-cycle
20-Pin
T-46-23-17
1003 ic
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