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    Toshiba America Electronic Components MT3S04T

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    MT3S04 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT3S04AFS Toshiba VHF~UHF Band Low-Noise Amplifier Applications Original PDF
    MT3S04AS Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    MT3S04AS Toshiba Scan PDF
    MT3S04AT Toshiba Scan PDF
    MT3S04AT Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    MT3S04AU Toshiba Scan PDF
    MT3S04AU Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF

    MT3S04 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EG 8010

    Abstract: transistor 9018 NPN
    Text: MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB at f = 1 GHz • High gain: gain = 12.5dB (at f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF MT3S04AT EG 8010 transistor 9018 NPN

    Untitled

    Abstract: No abstract text available
    Text: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S04AT (MT3S06FS) (MT3S04AFS) Maximum Ratings (Ta = 25°C) fS6 Characteristic


    Original     		PDF MT6L57AFS MT3S06T MT3S06FS) MT3S04AT MT3S04AFS)

    MT3S04AS

    Abstract: No abstract text available
    Text: MT3S04AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AS VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB f = 1 GHz • High gain: Gain = 12.5dB (f = 1 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF MT3S04AS MT3S04AS

    014E

    Abstract: 200E 800E MT3S04AT 7880e13 5810E
    Text: MT3S04AT SPICE parameters UCB SPICE2G6 20020225 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S04AT 3 18 9 19 6 18 6 19 6 0 9 0 2 15 8 16 5 15 5 16 5 0


    Original     		PDF MT3S04AT MT3S04AT 014E-02 260E-10 800E-13 346E-14 014E 200E 800E 7880e13 5810E

    MT3S04AFS

    Abstract: No abstract text available
    Text: MT3S04AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AFS Unit: mm • Superior performance in oscillator applications Superior noise characteristics : NF = 1.3 dB, |S21e|2 = 9.5 dB f = 1 GHz 1 3 2 Lead (Pb)-free. 0.8±0.05 1.0±0.05 0.1±0.05


    Original     		PDF MT3S04AFS MT3S04AFS

    MT3S04AFS

    Abstract: No abstract text available
    Text: MT3S04AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AFS Unit: mm Superior performance in oscillator applications Superior noise characteristics 0.6±0.05 • • 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.3 dB, |S21e| = 9.5 dB f = 1 GHz


    Original     		PDF MT3S04AFS MT3S04AFS

    MT3S04AFS

    Abstract: No abstract text available
    Text: MT3S04AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AFS Unit: mm Superior performance in oscillator applications Superior noise characteristics 2 0.35±0.05 • • 0.6±0.05 VHF~UHF Band Oscillator Applications 0.2±0.05 0.15±0.05 VHF~UHF Band Low-Noise Amplifier Applications


    Original     		PDF MT3S04AFS MT3S04AFS

    MT3S04AS

    Abstract: No abstract text available
    Text: MT3S04AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AS VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB f = 1 GHz • High gain: Gain = 12.5dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF MT3S04AS MT3S04AS

    4317 0215 transistor

    Abstract: MT3S04AT IB 6415
    Text: MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB at f = 1 GHz • High gain: gain = 12.5dB (at f = 1 GHz) Unit: mm Maximum Ratings (Ta = 25°C)


    Original     		PDF MT3S04AT 4317 0215 transistor MT3S04AT IB 6415

    Untitled

    Abstract: No abstract text available
    Text: MT3S04A 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S04A ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • NF = 1.2dB f= 1 GHz ，|S21e |2 単位: mm = 12.5dB (f = 1 GHz) 絶対最大定格 (Ta = 25°C) 項 目


    Original     		PDF MT3S04A SC-59

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT3S04S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04S Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF MT3S04S

    2493 transistor

    Abstract: marking 9721 IC 7109
    Text: TO SH IBA MT3S04AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB at f = 1 GHz TT irrV » fio in JJlg ll V ^ U lll


    OCR Scan     		PDF MT3S04AT IS21I2 2493 transistor marking 9721 IC 7109

    S2 MARKING TRANSISTOR

    Abstract: No abstract text available
    Text: TOSHIBA MT3S04 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.5 • Low Noise : Figure : NF = 1.2 dB • High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF MT3S04 SC-59 S2 MARKING TRANSISTOR

    MT3S04AS

    Abstract: No abstract text available
    Text: TO SH IBA MT3S04AS TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT 3 S 0 4 AS Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF MT3S04AS MT3S04AS

    MT3S04T

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3SQ4T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : N F = 1.2 dB at f = 1 GHz • High G ain : G ain = 12.5 dB (at f = 1 GHz) U nit in mm MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF MT3S04T MT3S04T

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT3S04 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF MT3S04

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MT3S04AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AU VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF MT3S04AU

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MT3S04AS TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AS Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz 1.6 ±0.2 ,0.8 ± 0 . 1,


    OCR Scan     		PDF MT3S04AS

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT3S04 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1-0.5 -0.3 2.5 Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz + 0.25 1 5 - 0 . 15 .


    OCR Scan     		PDF MT3S04

    toshiba 5564

    Abstract: 6922 EH 4317 0215 transistor MT3S04AT NPN Silicon Epitaxial Planar Transistor 9018 9018 transistor
    Text: TO SH IBA MT3S04AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ±0 .0 5 • Low Noise Figure : NF = 1.2 dB at f = 1 GHz * High Gain 0.8 ± 0.05 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF MT3S04AT CHARAC83 toshiba 5564 6922 EH 4317 0215 transistor MT3S04AT NPN Silicon Epitaxial Planar Transistor 9018 9018 transistor

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT3S04U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04U V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF MT3S04U

    MT3S04T

    Abstract: NF 924
    Text: TO SHIBA MT3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE TENTATIVE MT3S04T VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ±0.05 • Low Noise Figure : NF = 1.2 dB at f = 1 GHz • High Gain 0.8 ± 0.05 : Gain = 12.5 dB (at f = 1 GHz)


    OCR Scan     		PDF MT3S04T CHARACTER89 IS21I2 MT3S04T NF 924

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT3S04U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT 3 S 0 4 U V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise : Figure : NF = 1.2 dB • High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF MT3S04U

    MT3S04S

    Abstract: No abstract text available
    Text: TOSHIBA MT3S04S TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04S Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF MT3S04S MT3S04S