MT3S04 Search Results

Contextual Info: T O SH IB A TENTATIVE MT3S04S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04S Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C)

2493 transistor

Abstract: marking 9721 IC 7109
Contextual Info: TO SH IBA MT3S04AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB at f = 1 GHz TT irrV » fio in JJlg ll V ^ U lll

S2 MARKING TRANSISTOR

Contextual Info: TOSHIBA MT3S04 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.5 • Low Noise : Figure : NF = 1.2 dB • High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C)

MT3S04AS

Contextual Info: TO SH IBA MT3S04AS TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT 3 S 0 4 AS Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C)

EG 8010

Abstract: transistor 9018 NPN
Contextual Info: MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB at f = 1 GHz • High gain: gain = 12.5dB (at f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S04AT (MT3S06FS) (MT3S04AFS) Maximum Ratings (Ta = 25°C) fS6 Characteristic

MT3S04AS

Contextual Info: MT3S04AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AS VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB f = 1 GHz • High gain: Gain = 12.5dB (f = 1 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics

014E

Abstract: 200E 800E MT3S04AT 7880e13 5810E
Contextual Info: MT3S04AT SPICE parameters UCB SPICE2G6 20020225 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S04AT 3 18 9 19 6 18 6 19 6 0 9 0 2 15 8 16 5 15 5 16 5 0

MT3S04AFS

Contextual Info: MT3S04AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AFS Unit: mm • Superior performance in oscillator applications Superior noise characteristics : NF = 1.3 dB, |S21e|2 = 9.5 dB f = 1 GHz 1 3 2 Lead (Pb)-free. 0.8±0.05 1.0±0.05 0.1±0.05

Contextual Info: TO SHIBA TENTATIVE M T3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.2 dB at f = 1 GHz • High Gain Unit in mm 1.2 ± 0.05 0.8 ± 0.05 : Gain = 12.5 dB (at f = 1 GHz)

MT3S04T

Contextual Info: T O SH IB A TENTATIVE MT3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3SQ4T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : N F = 1.2 dB at f = 1 GHz • High G ain : G ain = 12.5 dB (at f = 1 GHz) U nit in mm MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: T O SH IB A TENTATIVE MT3S04 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SH IBA MT3S04AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AU VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SH IBA MT3S04AS TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AS Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz 1.6 ±0.2 ,0.8 ± 0 . 1,

MT3S04AFS

Contextual Info: MT3S04AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AFS Unit: mm Superior performance in oscillator applications Superior noise characteristics 2 0.35±0.05 • • 0.6±0.05 VHF~UHF Band Oscillator Applications 0.2±0.05 0.15±0.05 VHF~UHF Band Low-Noise Amplifier Applications

MT3S04AS

Contextual Info: MT3S04AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AS VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB f = 1 GHz • High gain: Gain = 12.5dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: T O SH IB A TENTATIVE MT3S04 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1-0.5 -0.3 2.5 Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz + 0.25 1 5 - 0 . 15 .

4317 0215 transistor

Abstract: MT3S04AT IB 6415
Contextual Info: MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB at f = 1 GHz • High gain: gain = 12.5dB (at f = 1 GHz) Unit: mm Maximum Ratings (Ta = 25°C)

toshiba 5564

Abstract: 6922 EH 4317 0215 transistor MT3S04AT NPN Silicon Epitaxial Planar Transistor 9018 9018 transistor
Contextual Info: TO SH IBA MT3S04AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ±0 .0 5 • Low Noise Figure : NF = 1.2 dB at f = 1 GHz * High Gain 0.8 ± 0.05 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: T O SH IB A TENTATIVE MT3S04U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S04U V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

MT3S04T

Abstract: NF 924
Contextual Info: TO SHIBA MT3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE TENTATIVE MT3S04T VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ±0.05 • Low Noise Figure : NF = 1.2 dB at f = 1 GHz • High Gain 0.8 ± 0.05 : Gain = 12.5 dB (at f = 1 GHz)

Contextual Info: T O SH IB A TENTATIVE MT3S04U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT 3 S 0 4 U V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise : Figure : NF = 1.2 dB • High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

MT3S04S

Contextual Info: TOSHIBA MT3S04S TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04S Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: MT3S04A 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S04A ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • NF = 1.2dB f= 1 GHz ，|S21e |2 単位: mm = 12.5dB (f = 1 GHz) 絶対最大定格 (Ta = 25°C) 項 目