MT3S03 Search Results

Contextual Info: MT6L62AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AE VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Mounted Devices Three pin SSM type part No. Q1 Q2 MT3S07S MT3S03AS Absolute Maximum Ratings Ta = 25°C

MT3S03AT

Abstract: 014E 200E 800E
Contextual Info: MT3S03AT SPICE parameters UCB SPICE2G6 20020225 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S03AT 3 18 9 19 6 18 6 19 6 0 9 0 2 15 8 16 5 15 5 16 5 0

Contextual Info: T O SH IB A TENTATIVE MT3S03 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1-0.5 -0.3 2.5 Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB at f= 2 GHz + 0.25 1 5 - 0 . 15 .

Contextual Info: TOSHIBA MT3S03 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.5 • Low Noise : Figure : NF = 1.4 dB • High Gain : Gain = 8 dB at f = 2 GHz MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: T O SH IB A TENTATIVE MT3S03 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB at f= 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: T O SH IB A TENTATIVE MT3S03U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT 3 S 0 3 U V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SH IBA MT3S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AU V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

transistor 14315

Abstract: 14315
Contextual Info: MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB at f = 2 GHz • High gain: gain = 8dB (at f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics

MT3S03AFS

Abstract: DSA0024106
Contextual Info: MT3S03AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AFS Unit: mm Superior performance in oscillator and Buffer applications Superior noise characteristics 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.7 dB, |S21e| = 5.5 dB f = 2 GHz

MT3S03A

Contextual Info: MT3S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 8dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Symbol

Contextual Info: TO SH IBA MT3S03AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.4 dB at f = 2 GHz TTirrV» fio i n JJlg ll V ^ U lll

Contextual Info: TO SH IBA MT3S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AU VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

MT3S03T

Contextual Info: TO SHIBA MT3S03T MT3S03T TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ±0.05 • Low Noise Figure : NF = 1.4 dB at f = 2 GHz • High Gain 0.8 ± 0.05 : Gain = 8 dB (at f = 2 GHz)

MT3S03A

Contextual Info: MT3S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 8dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic

MT3S03AFS

Contextual Info: MT3S03AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AFS Unit: mm Superior performance in oscillator and Buffer applications Superior noise characteristics 0.6±0.05 • • 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.7 dB, |S21e| = 5.5 dB f = 2 GHz

MT3S03AU

Contextual Info: MT3S03AU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 8dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

MT3S03AU

Contextual Info: MT3S03AU 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S03AU ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • 雑音特性が優れています。: NF = 1.4dB, |S21e |2 単位: mm = 8dB f = 2 GHz 絶対最大定格 (Ta = 25°C)

Contextual Info: TO SHIBA TENTATIVE MT3S03T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ± 0.05 • Low Noise Figure : NF = 1.4 dB at f = 2 GHz • High Gain 0.8 ± 0.05 : Gain = 8 dB (at f = 2 GHz)

Contextual Info: MT3S03AU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 8dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol

MT3S03AU

Contextual Info: TO SH IBA MT3S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 2.1 ¿ 0.1 Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz 1 .2 5 Ì0 .1 -EU

MT3S03AS

Contextual Info: TO SH IBA MT3S03AS TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AS Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz 1.6 ± 0.2 ,0.8 ±0.1, r—

MT3S03A

Contextual Info: TO SH IBA MT3S03A TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03A V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB at f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

MT3S03AS

Contextual Info: MT3S03AS 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S03AS ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • 雑音特性が優れています。: NF = 1.4dB, |S21e |2 単位: mm = 8dB f = 2 GHz 絶対最大定格 (Ta = 25°C)

MT3S03A

Contextual Info: MT3S03A 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S03A ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • NF = 1.4dB f=2GHz ，|S21e |2 単位: mm = 8dB (f = 2 GHz) 絶対最大定格 (Ta = 25°C) 項 目 記