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    SPC Multicomp HMT03P02S

    Mosfet, P-Ch, 20V, 3A, Sot-23 Rohs Compliant: Yes |Multicomp Pro HMT03P02S
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    Newark HMT03P02S Bulk 14,995 5
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    MT03P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MC1A301AT

    Abstract: CL25D300T CL04A400M CK08CA311 CL09A300M CL00A301T CK75CA311 cl02d310t CL02A400T CL05A400M
    Text: 39584 GE Consumer & Industrial Power Protection GE Consumer & Industrial Power Protection formerly GE Power Controls , a division of GE Consumer & Industrial, is a first class European supplier of low-voltage products including wiring devices, residential and industrial electrical


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    PDF H-1340 B-9000 C/4601/E/EX MC1A301AT CL25D300T CL04A400M CK08CA311 CL09A300M CL00A301T CK75CA311 cl02d310t CL02A400T CL05A400M

    FDN36MC100GD

    Abstract: magnetic Contactor wiring diagrams and float switch CL03A FDN36MC080GD star delta FORWARD REVERSE STARTER GPF10C02 GPS1bsah LG0006P1B0 CL07A CL03A-CL04A
    Text: 39584 GE Consumer & Industrial Power Protection GE Consumer & Industrial Power Protection formerly GE Power Controls , a division of GE Consumer & Industrial, is a first class European supplier of low-voltage products including wiring devices, residential and industrial electrical


    Original
    PDF H-1340 B-9000 C/4601/E/EX FDN36MC100GD magnetic Contactor wiring diagrams and float switch CL03A FDN36MC080GD star delta FORWARD REVERSE STARTER GPF10C02 GPS1bsah LG0006P1B0 CL07A CL03A-CL04A

    2SK1536

    Abstract: k1536 k1536 mosfet to1a AC240V F3W90 SHINDENGEN DIODE
    Text: h v x v ' J - t : /\or7 —m o s f e t HVX Series Power MOSFET 2SK1536 o u t l in e d im e n s i o n s Case MT0-3P F3W90 [U n it '. m m ] 5.0 » 3 900V 3A •A * § * (C iss) f f 'J v S l V if ICti □ ; W Z X fêfflÀ tfê ô V M lA ex-< y? y ^ S 'f Affäiv


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    PDF 2SK1536 F3W90] AC240V K1536 02HTc 02n307 2SK1536 k1536 k1536 mosfet to1a F3W90 SHINDENGEN DIODE

    Untitled

    Abstract: No abstract text available
    Text: S c h o ttk y B a rrie r D io d e s Twin Diodes Electrical C h ara cteristics A b solute M a x im u m R atings VF Part No. 60 9M D10SD6M S10SC4M 4MR 90 60 [°C /W ] 0.55 0.58 1.0 2 1 65 120 — — 2 — 3.3 150 0.55 2.5 2.5 116 150 0.45 0.55 0.58 0.4 2.5


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    PDF D10SD6M S10SC4M DF10SC4M

    Schottky Diode s30sc4m

    Abstract: SHINDENGEN DIODE s30sc4m
    Text: y 3 y h * / \ ' U 7 K "J O i Twin Diode Schottky Barrier Diode OUTLINE DIMENSIONS S30SC4M Case : MT0-3P 40V 30A •T j # P • 1sot; x S K hhsm e jc ô '/ j'S L i •xmmm « ì* • S R S ig • D C /D C n ^ A -^ •mm, v-u. •a«. /K • Ë të ft o a# ü


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    PDF S30SC4M 0000r Schottky Diode s30sc4m SHINDENGEN DIODE s30sc4m

    2SK2177

    Abstract: No abstract text available
    Text: E-pack Lead type ITO-220 MT0-3P IT0-3P ST0-220 TO-220 MT0-3L N-Channel, Enhancement type Type No. E IA J Absolute Maximum Ratings Electrical Characteristics Tch Voss Voss Id Pt Rds (o n ) (max) [•c] [V ] [V ] [A ] [W ] to ] [p F] [p F] [ns] [ns] 0.84 385


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    PDF ITO-220 O-220 ST0-220 O-220 STO-225 STO-220 FTO-220 STO-220 2SK2177

    2SC4236

    Abstract: No abstract text available
    Text: x i 'j + 's 'î r t 7 - h Sw itching P o w e r Transistor H FX series Outline Dimensions 6a 2SC4236 NPN (T6W80HFX) Case : MT0-3P 5.01 “3 2.0 ±0-3 2.410.3 0.65ta» Unit : mm Absolute Maximum Ratings « e ie Item 4k Symbol • '■<— ¿.MB. C ollector to B a s e V oltage


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    PDF 2SC4236 T6W80HFX) D003bB0 2SC4236

    2SK1397

    Abstract: F40W25
    Text: L V X î/ U - X /17-M O S FE T LVX SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case : MT0-3P 2SK1397 F40W 25 5.0±»3 250v 40a [Unit • mm] ■ Æ fê S l R A T IN G S ■ A b s o lu te M a x im u m R a tin g s m Be § Ite m %. S ym bol ft m.


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    PDF /17-MOSFET 2SK1397 F40W25) 2SK1397 F40W25

    MT03P

    Abstract: No abstract text available
    Text: H igh V o lta g e • H igh S p e ed S w itc h in g T ra n s is to rs HDT series Bipolartransistors NPN Parts No. Absolute Maximum Ratings Electrical Characteristics V c eo hFE V CE V be (sat) (sat) (max) (m ax) [V] [V] 0jc fT ton ts tf (m ax) (max) (max)


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    PDF 2SC4310 O-220 ITO-220 2SC4230 2SC4940 MT03P

    f20lc

    Abstract: SF5LC20U 20LC20u D200LC40B smd 10 20U D200L DIODE 542 SMD
    Text: S u p e r F a s t R e c o v e r y D io d e s Twin Diodes Absolute Maximum Ratings Electrical Characteristics |R t rr 0j/ Vf Parts No. V rm lo Conditions I fsm max Conditions (max) [V] [A] If VR=VRM [°C] [A] [A] [mA] 132 125 81 61 45 [V] 0.98 1.3 0.98 1.3


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    PDF D5LC20U DE5LC20U SF5LC20U D8LC20U D8LD20U D10LC20U DF10LC20U SF10LC20U ITO-220 FTO-220 f20lc SF5LC20U 20LC20u D200LC40B smd 10 20U D200L DIODE 542 SMD

    toco

    Abstract: 2SK1396 K1396 F30W25
    Text: L V X v U -X MOSFET LVX SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case ' MT0-3P 2SK 1396 F30W25 5.0Ì0.3 250v 30a . 2.0±0-3 2.4i0-3 0.65±Q2 [U n it ^ m m] ■ Æ fê ü RATINGS A b s o lu te M a x im u m m R a tin g s ;. I B . Ite m -J # C ond itio ns


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    PDF 2SK1396 F30W25) -K1396 toco 2SK1396 K1396 F30W25

    Untitled

    Abstract: No abstract text available
    Text: H V X -ïïv'J—X 7X9-MOSFET H V X -ÏÏ SERIES POWER MOSFET • 2SK2667 O U T L IN E DIM ENSIONS Case : MT0-3P F3W90HVX2 5.0 ï°-3 900v 3a 2.QIQ.3 2 .4 * » 0.65*°» > y ■ [Unit ‘ mm] RATINGS ■ Absolute Maximum R atings @ m Item te (T c= 2 5 °C )


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    PDF 2SK2667 F3W90HVX2) 000E30S

    Untitled

    Abstract: No abstract text available
    Text: Pow er M O S F E T HVX series N-Channel, Enhancement type Part No. Absolute Maximum Ratings Electrical Characteristics R d s ON ton toff EIAJ Tch V dss V g ss ID Pt (max) (typ) (typ) No. [°C ] [V] [V] [A] [W ] [Q ] [ns] [ns] Package Fig. 1 10 50 30 70 100


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    PDF 61-4SMD) O-220 IT0-220 2SK1533 FT0-220 FTO-220 ST0-220 67SMD)

    2SC4314

    Abstract: No abstract text available
    Text: Switching Power Transistor 15a H D T series Outline Dimensions 2SC4314 Case : MT0-3P CT15W80HDT NPN) 5.0±o.j 2.2±o.5 ^3 .3 ^ 2.0*03 2.4 ±M Q.65±°-g Unit • mm • > Ê & # ^ 5 Ë tè m Absolute Maximum Ratings Item § I E Storage Temperature Junction Temperature


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    PDF 2SC4314 CT15W80HDT) 0G03b3b 2SC4314 aS113S7

    tf s 544 a

    Abstract: No abstract text available
    Text: High Speed Sw itching Transistors F3 series Bipolartransistors NPN Parts No. EIAJ No. VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 3 1 45 500 400 7 6 2 50 10 4 100 VCEO 3164 hFE (sus) (m in) 2SC3162 3163 Electrical Characteristics Absolute Maximum Ratings


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    PDF 2SC3162 O-220 2SC4051 ITO-220 ITO-220 2SC4663 tf s 544 a

    2SB 545

    Abstract: 030VC60 smd tra 14 SMD T26 1AMM ST0220 Am 170 415
    Text: Basic Ordering and Packing Form Explanation o f P acking L is ts 1. Type No. Example 1 D1ND ^- R everse voltage X 1/10. Example 2 2SK 2663 E IA J No. E IA J C lassification. 2SA , 2SB , 2S C , 2SD T ra n s is to r 2 S J : M osfet Reel width 2. Code No.


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    PDF D15V060 030VC60 2SB 545 smd tra 14 SMD T26 1AMM ST0220 Am 170 415

    Untitled

    Abstract: No abstract text available
    Text: HVX-I^U-X /f7—MOSFET H V X -Ï SERIES POWER MOSFET N - i- v ^ B T fä s B I hM O U T L IN E D IM E N S IO N S Case : MT0-3P 2SK2676 F10W90HVX2 5.0Ì0-3 ¿3.3*°-* 900v 10a 2.0±0-3 2.4t0-3 0.65±»-î @ : Gate (D Drain (3) '. S o u rce [Unit •mm] ■


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    PDF 2SK2676 F10W90HVX2) ji2113fi? DG0232b

    Untitled

    Abstract: No abstract text available
    Text: y a y h + M 'J 7 ^ i-K -y<>m Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S20SC9M Case : MT0-3P i 3.3 * 02 90V 20A m a •TÌ150TC 7i^yiyxUÿi •P rrs m • e jc f iV Jv ÿ n D <D • S R S iS • DC/DC 3 y i< .—P •mm, <f-h, • « a , m o a *ü


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    PDF S20SC9M 150TC 814EI

    Untitled

    Abstract: No abstract text available
    Text: H V X - I I v U - X 7 t 7 - MOSFET H V X -I SERIES POWER MOSFET N - i- v ^ k O U T L IN E D IM ENSIONS Case :MT0-3P F7W 90HVX2 5.0 * 0* ,2±«.5 900v 7a 2.0 ±Q-3 2.4 * 0* Q,65±0-2 • G a te (2) I D rain (3) ‘ Source I ® [U n it '• mm] RA TIN G S


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    PDF 90HVX2) 02n307 2SK2674 F7W90HVX2)

    SHINDENGEN TR 222

    Abstract: D2S860 D25VB60 F10LC20U S1WBA60B D15VBA d15vba60 D4SBA80 DF25SC6M d3sb60 86
    Text: 1. • -« g a ff* * lo A V V rm (y \ ^ < 4 ^ 0.4 0.8 1 a» S1YB60 S1NB20 S1NB60 S1WBA60 S1WBA60B S1WBA20 S1VB20 S1NB80 1 1.4 S1WBA80Z 1.7 600 800 SHINDENGEN D2SBA20 D2SBA60 LN2SB60 D3B20 D3SBA20 U4SB20 D3SB60 D4SB80 D3SBA60 D4SBA80 D4SB80Z U4SB60 1.1 5


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    PDF SIYB20 S1ZB20 S1NB20 S1WBA20 S1VB20 S1VBA20 S1YB60 S1ZB60 S1NB60 S1WBA60 SHINDENGEN TR 222 D2S860 D25VB60 F10LC20U S1WBA60B D15VBA d15vba60 D4SBA80 DF25SC6M d3sb60 86

    live parts

    Abstract: No abstract text available
    Text: S f 7 ÎH M Æ c n y - ;u k m # -r * - S H IN D E N G E N ’S Insulated P las tic Packages k K '^ y - f +- K -> •; - X 't i & f ó # '* » Shindengen insulated Plastic packages are new products desi­ gned to meet the isolation requirements of U L , etc., without any


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    PDF T0-220 ITO-22Q) live parts

    Untitled

    Abstract: No abstract text available
    Text: P o w e r M O S FE T VX-II series N-Channel, Enhancement type Part No. EIAJ No. ☆ 2SK2177 ☆ 2178 ☆ 2179 ☆ 2180 ☆ 2181 ☆ 2182 ☆ 2183 ☆ 2184 ☆ 2185 ☆ 2186 ☆ 2187 ☆ 2188 ☆ 2189 ☆ 2190 ☆ 2191 ☆ 2192 ☆ 2193 ☆ 2194 ☆ 2195 ☆


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    PDF 2SK2177 O-220 STO-220 FTO-220

    k1536

    Abstract: 2SK1536 F3W90 k1536 mosfet
    Text: H V X v 'J - X A 7 -M 0 S F E T H V X SERIES POWER MOSFET ? fïïW £ [I] O U T L IN E D IM E N S IO N S Case : MT0-3P 2SK1536 .H5 I 6 -0 .1 CF3W90 Date code j ¥1 au EIAJ No. c \ D S 1.2±o-2 2) Drain (3) Source 5 . 4 5 ± û -2j £» S eg 0.65^o2 5 .4 5 *0 -2


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    PDF 2SK1536 CF3W90) K1536 k1536 2SK1536 F3W90 k1536 mosfet

    Untitled

    Abstract: No abstract text available
    Text: .r lU I Switching Power Transistor S 6 P I6 S O utline Dimensions 6a 2SC4312 NPN (T 6 W 8 0 H D T ) Case I MT0-3P .,+o.s 5.0 * 0 » 1 6 - 0.1 2.2±»-5 i M Ì H p?ne3 -JÇ Date code 2.0*o.3 I &fe»85 -C4312 EIAJNo. -B C E FOT yiMiM 2.4 * » MAX 2.5 3.5


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    PDF 2SC4312 -C4312 T6W80HDT) DDD3b33