MC1A301AT
Abstract: CL25D300T CL04A400M CK08CA311 CL09A300M CL00A301T CK75CA311 cl02d310t CL02A400T CL05A400M
Text: 39584 GE Consumer & Industrial Power Protection GE Consumer & Industrial Power Protection formerly GE Power Controls , a division of GE Consumer & Industrial, is a first class European supplier of low-voltage products including wiring devices, residential and industrial electrical
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H-1340
B-9000
C/4601/E/EX
MC1A301AT
CL25D300T
CL04A400M
CK08CA311
CL09A300M
CL00A301T
CK75CA311
cl02d310t
CL02A400T
CL05A400M
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FDN36MC100GD
Abstract: magnetic Contactor wiring diagrams and float switch CL03A FDN36MC080GD star delta FORWARD REVERSE STARTER GPF10C02 GPS1bsah LG0006P1B0 CL07A CL03A-CL04A
Text: 39584 GE Consumer & Industrial Power Protection GE Consumer & Industrial Power Protection formerly GE Power Controls , a division of GE Consumer & Industrial, is a first class European supplier of low-voltage products including wiring devices, residential and industrial electrical
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Original
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H-1340
B-9000
C/4601/E/EX
FDN36MC100GD
magnetic Contactor wiring diagrams and float switch
CL03A
FDN36MC080GD
star delta FORWARD REVERSE STARTER
GPF10C02
GPS1bsah
LG0006P1B0
CL07A
CL03A-CL04A
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2SK1536
Abstract: k1536 k1536 mosfet to1a AC240V F3W90 SHINDENGEN DIODE
Text: h v x v ' J - t : /\or7 —m o s f e t HVX Series Power MOSFET 2SK1536 o u t l in e d im e n s i o n s Case MT0-3P F3W90 [U n it '. m m ] 5.0 » 3 900V 3A •A * § * (C iss) f f 'J v S l V if ICti □ ; W Z X fêfflÀ tfê ô V M lA ex-< y? y ^ S 'f Affäiv
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2SK1536
F3W90]
AC240V
K1536
02HTc
02n307
2SK1536
k1536
k1536 mosfet
to1a
F3W90
SHINDENGEN DIODE
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Untitled
Abstract: No abstract text available
Text: S c h o ttk y B a rrie r D io d e s Twin Diodes Electrical C h ara cteristics A b solute M a x im u m R atings VF Part No. 60 9M D10SD6M S10SC4M 4MR 90 60 [°C /W ] 0.55 0.58 1.0 2 1 65 120 — — 2 — 3.3 150 0.55 2.5 2.5 116 150 0.45 0.55 0.58 0.4 2.5
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D10SD6M
S10SC4M
DF10SC4M
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Schottky Diode s30sc4m
Abstract: SHINDENGEN DIODE s30sc4m
Text: y 3 y h * / \ ' U 7 K "J O i Twin Diode Schottky Barrier Diode OUTLINE DIMENSIONS S30SC4M Case : MT0-3P 40V 30A •T j # P • 1sot; x S K hhsm e jc ô '/ j'S L i •xmmm « ì* • S R S ig • D C /D C n ^ A -^ •mm, v-u. •a«. /K • Ë të ft o a# ü
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S30SC4M
0000r
Schottky Diode s30sc4m
SHINDENGEN DIODE
s30sc4m
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2SK2177
Abstract: No abstract text available
Text: E-pack Lead type ITO-220 MT0-3P IT0-3P ST0-220 TO-220 MT0-3L N-Channel, Enhancement type Type No. E IA J Absolute Maximum Ratings Electrical Characteristics Tch Voss Voss Id Pt Rds (o n ) (max) [•c] [V ] [V ] [A ] [W ] to ] [p F] [p F] [ns] [ns] 0.84 385
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ITO-220
O-220
ST0-220
O-220
STO-225
STO-220
FTO-220
STO-220
2SK2177
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2SC4236
Abstract: No abstract text available
Text: x i 'j + 's 'î r t 7 - h Sw itching P o w e r Transistor H FX series Outline Dimensions 6a 2SC4236 NPN (T6W80HFX) Case : MT0-3P 5.01 “3 2.0 ±0-3 2.410.3 0.65ta» Unit : mm Absolute Maximum Ratings « e ie Item 4k Symbol • '■<— ¿.MB. C ollector to B a s e V oltage
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2SC4236
T6W80HFX)
D003bB0
2SC4236
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2SK1397
Abstract: F40W25
Text: L V X î/ U - X /17-M O S FE T LVX SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case : MT0-3P 2SK1397 F40W 25 5.0±»3 250v 40a [Unit • mm] ■ Æ fê S l R A T IN G S ■ A b s o lu te M a x im u m R a tin g s m Be § Ite m %. S ym bol ft m.
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/17-MOSFET
2SK1397
F40W25)
2SK1397
F40W25
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MT03P
Abstract: No abstract text available
Text: H igh V o lta g e • H igh S p e ed S w itc h in g T ra n s is to rs HDT series Bipolartransistors NPN Parts No. Absolute Maximum Ratings Electrical Characteristics V c eo hFE V CE V be (sat) (sat) (max) (m ax) [V] [V] 0jc fT ton ts tf (m ax) (max) (max)
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2SC4310
O-220
ITO-220
2SC4230
2SC4940
MT03P
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f20lc
Abstract: SF5LC20U 20LC20u D200LC40B smd 10 20U D200L DIODE 542 SMD
Text: S u p e r F a s t R e c o v e r y D io d e s Twin Diodes Absolute Maximum Ratings Electrical Characteristics |R t rr 0j/ Vf Parts No. V rm lo Conditions I fsm max Conditions (max) [V] [A] If VR=VRM [°C] [A] [A] [mA] 132 125 81 61 45 [V] 0.98 1.3 0.98 1.3
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D5LC20U
DE5LC20U
SF5LC20U
D8LC20U
D8LD20U
D10LC20U
DF10LC20U
SF10LC20U
ITO-220
FTO-220
f20lc
SF5LC20U
20LC20u
D200LC40B
smd 10 20U
D200L
DIODE 542 SMD
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toco
Abstract: 2SK1396 K1396 F30W25
Text: L V X v U -X MOSFET LVX SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case ' MT0-3P 2SK 1396 F30W25 5.0Ì0.3 250v 30a . 2.0±0-3 2.4i0-3 0.65±Q2 [U n it ^ m m] ■ Æ fê ü RATINGS A b s o lu te M a x im u m m R a tin g s ;. I B . Ite m -J # C ond itio ns
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2SK1396
F30W25)
-K1396
toco
2SK1396
K1396
F30W25
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Untitled
Abstract: No abstract text available
Text: H V X -ïïv'J—X 7X9-MOSFET H V X -ÏÏ SERIES POWER MOSFET • 2SK2667 O U T L IN E DIM ENSIONS Case : MT0-3P F3W90HVX2 5.0 ï°-3 900v 3a 2.QIQ.3 2 .4 * » 0.65*°» > y ■ [Unit ‘ mm] RATINGS ■ Absolute Maximum R atings @ m Item te (T c= 2 5 °C )
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2SK2667
F3W90HVX2)
000E30S
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Untitled
Abstract: No abstract text available
Text: Pow er M O S F E T HVX series N-Channel, Enhancement type Part No. Absolute Maximum Ratings Electrical Characteristics R d s ON ton toff EIAJ Tch V dss V g ss ID Pt (max) (typ) (typ) No. [°C ] [V] [V] [A] [W ] [Q ] [ns] [ns] Package Fig. 1 10 50 30 70 100
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61-4SMD)
O-220
IT0-220
2SK1533
FT0-220
FTO-220
ST0-220
67SMD)
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2SC4314
Abstract: No abstract text available
Text: Switching Power Transistor 15a H D T series Outline Dimensions 2SC4314 Case : MT0-3P CT15W80HDT NPN) 5.0±o.j 2.2±o.5 ^3 .3 ^ 2.0*03 2.4 ±M Q.65±°-g Unit • mm • > Ê & # ^ 5 Ë tè m Absolute Maximum Ratings Item § I E Storage Temperature Junction Temperature
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2SC4314
CT15W80HDT)
0G03b3b
2SC4314
aS113S7
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tf s 544 a
Abstract: No abstract text available
Text: High Speed Sw itching Transistors F3 series Bipolartransistors NPN Parts No. EIAJ No. VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 3 1 45 500 400 7 6 2 50 10 4 100 VCEO 3164 hFE (sus) (m in) 2SC3162 3163 Electrical Characteristics Absolute Maximum Ratings
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2SC3162
O-220
2SC4051
ITO-220
ITO-220
2SC4663
tf s 544 a
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2SB 545
Abstract: 030VC60 smd tra 14 SMD T26 1AMM ST0220 Am 170 415
Text: Basic Ordering and Packing Form Explanation o f P acking L is ts 1. Type No. Example 1 D1ND ^- R everse voltage X 1/10. Example 2 2SK 2663 E IA J No. E IA J C lassification. 2SA , 2SB , 2S C , 2SD T ra n s is to r 2 S J : M osfet Reel width 2. Code No.
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D15V060
030VC60
2SB 545
smd tra 14
SMD T26
1AMM
ST0220
Am 170 415
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Untitled
Abstract: No abstract text available
Text: HVX-I^U-X /f7—MOSFET H V X -Ï SERIES POWER MOSFET N - i- v ^ B T fä s B I hM O U T L IN E D IM E N S IO N S Case : MT0-3P 2SK2676 F10W90HVX2 5.0Ì0-3 ¿3.3*°-* 900v 10a 2.0±0-3 2.4t0-3 0.65±»-î @ : Gate (D Drain (3) '. S o u rce [Unit •mm] ■
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2SK2676
F10W90HVX2)
ji2113fi?
DG0232b
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Untitled
Abstract: No abstract text available
Text: y a y h + M 'J 7 ^ i-K -y<>m Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S20SC9M Case : MT0-3P i 3.3 * 02 90V 20A m a •TÌ150TC 7i^yiyxUÿi •P rrs m • e jc f iV Jv ÿ n D <D • S R S iS • DC/DC 3 y i< .—P •mm, <f-h, • « a , m o a *ü
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S20SC9M
150TC
814EI
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Untitled
Abstract: No abstract text available
Text: H V X - I I v U - X 7 t 7 - MOSFET H V X -I SERIES POWER MOSFET N - i- v ^ k O U T L IN E D IM ENSIONS Case :MT0-3P F7W 90HVX2 5.0 * 0* ,2±«.5 900v 7a 2.0 ±Q-3 2.4 * 0* Q,65±0-2 • G a te (2) I D rain (3) ‘ Source I ® [U n it '• mm] RA TIN G S
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90HVX2)
02n307
2SK2674
F7W90HVX2)
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SHINDENGEN TR 222
Abstract: D2S860 D25VB60 F10LC20U S1WBA60B D15VBA d15vba60 D4SBA80 DF25SC6M d3sb60 86
Text: 1. • -« g a ff* * lo A V V rm (y \ ^ < 4 ^ 0.4 0.8 1 a» S1YB60 S1NB20 S1NB60 S1WBA60 S1WBA60B S1WBA20 S1VB20 S1NB80 1 1.4 S1WBA80Z 1.7 600 800 SHINDENGEN D2SBA20 D2SBA60 LN2SB60 D3B20 D3SBA20 U4SB20 D3SB60 D4SB80 D3SBA60 D4SBA80 D4SB80Z U4SB60 1.1 5
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SIYB20
S1ZB20
S1NB20
S1WBA20
S1VB20
S1VBA20
S1YB60
S1ZB60
S1NB60
S1WBA60
SHINDENGEN TR 222
D2S860
D25VB60
F10LC20U
S1WBA60B
D15VBA
d15vba60
D4SBA80
DF25SC6M
d3sb60 86
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live parts
Abstract: No abstract text available
Text: S f 7 ÎH M Æ c n y - ;u k m # -r * - S H IN D E N G E N ’S Insulated P las tic Packages k K '^ y - f +- K -> •; - X 't i & f ó # '* » Shindengen insulated Plastic packages are new products desi gned to meet the isolation requirements of U L , etc., without any
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T0-220
ITO-22Q)
live parts
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Untitled
Abstract: No abstract text available
Text: P o w e r M O S FE T VX-II series N-Channel, Enhancement type Part No. EIAJ No. ☆ 2SK2177 ☆ 2178 ☆ 2179 ☆ 2180 ☆ 2181 ☆ 2182 ☆ 2183 ☆ 2184 ☆ 2185 ☆ 2186 ☆ 2187 ☆ 2188 ☆ 2189 ☆ 2190 ☆ 2191 ☆ 2192 ☆ 2193 ☆ 2194 ☆ 2195 ☆
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2SK2177
O-220
STO-220
FTO-220
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k1536
Abstract: 2SK1536 F3W90 k1536 mosfet
Text: H V X v 'J - X A 7 -M 0 S F E T H V X SERIES POWER MOSFET ? fïïW £ [I] O U T L IN E D IM E N S IO N S Case : MT0-3P 2SK1536 .H5 I 6 -0 .1 CF3W90 Date code j ¥1 au EIAJ No. c \ D S 1.2±o-2 2) Drain (3) Source 5 . 4 5 ± û -2j £» S eg 0.65^o2 5 .4 5 *0 -2
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2SK1536
CF3W90)
K1536
k1536
2SK1536
F3W90
k1536 mosfet
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Untitled
Abstract: No abstract text available
Text: .r lU I Switching Power Transistor S 6 P I6 S O utline Dimensions 6a 2SC4312 NPN (T 6 W 8 0 H D T ) Case I MT0-3P .,+o.s 5.0 * 0 » 1 6 - 0.1 2.2±»-5 i M Ì H p?ne3 -JÇ Date code 2.0*o.3 I &fe»85 -C4312 EIAJNo. -B C E FOT yiMiM 2.4 * » MAX 2.5 3.5
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2SC4312
-C4312
T6W80HDT)
DDD3b33
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