MSS60 Search Results

Contextual Info: MSS60.253B20 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandM+ Test Freq253G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5

Contextual Info: MSS60,253B20 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current10u @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage3.5 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage675m @I(FM) (A) (Test Condition)1.0m

Contextual Info: MSS60.253E30 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandM+ Test Freq253G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5

Contextual Info: MSS60,253H30 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current10u @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage3.5 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage675m @I(FM) (A) (Test Condition)1.0m

Contextual Info: MSS60,253E30 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current10u @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage3.5 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage675m @I(FM) (A) (Test Condition)1.0m

Contextual Info: MSS60,846H40 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current10u @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage6.0 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)1.0m

mss60

Abstract: Metelics MSS60-841-E45 MSS60,444-E45 B10B b20 diode 448-E45 848-B80
Contextual Info: MSS60,000 Series Extra High Barrier Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS60,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum

Contextual Info: MSS60.253H30 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandM+ Test Freq253G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5

Contextual Info: MSS60,846E40 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current10u @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage6.0 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)1.0m

H11Z

Contextual Info: SCHOTTKY COPLANAR CROSSOVER QUAD H11Z m e t e liC S High Frequency Mixer Series To 4 0 GHz c o r p o r a tio n FEATURES • • • • • • • Extremely Low Junction C apacitance Monolithic Construction Small Physical Size Good Matching of Diode Junctions

Contextual Info: SCHOTTKY CROSSOVER QUAD m e metelics High F req u en cy M ixer Series To 26.5 GHz * CORPORATION FEATURES • • • • • • • Extremely Low Junction Capacitance Monolithic Construction Small Physical Size Good Matching of Diode Junctions Low Series Resistance (4 Ohms)

B46-E45

Abstract: metelics FSCM 59365
Contextual Info: metelics Bridge Quad Five Barrier Heights CORPORATION Features • Extremely low junction capacitance lOOss (lOOff) • Monolithic construction • Small physical size • Good matching of diode junctions • Low series resistance (4 ohms) • Low leakage current (nano amps)

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

Contextual Info: NETELICS CORP SbE D • b051352 □□□□Ell ?Ti4 ■ MET SCHOTTKY COPLANAR CROSSOVER QUAD |1 meteliCS High F requency M ixer Series To 4 0 GHz CORPORATION FEATURES • • • • • • • Extremely Low Junction Capacitance Monolithic Construction

PCR46

Abstract: pcb46
Contextual Info: |a n ar metelics m. \ m i i: \ n c r o s s o v e r q i a d i o r \ i i \ i r a n d d c n in I r s CORPORATION 4 1 9 16 ^ FEATURES • • • • Monolithic Quad with built crossover Low Capacitance 0.07 pF typical Ring and Bridge configurations Oxide / Nitride / Polyimide Passivation for

Contextual Info: SCHOTTKY COPLANAR CROSSOVER QUAD [1111 meteliCS CORPORATION High Frequency Mixer Series To 4 0 GHz FEATURES • • • • • • • Extremely Low Junction Capacitance Monolithic Construction Small Physical Size Good Matching of Diode Junctions Low Series Resistance (4 Ohms)

B46-E45

Abstract: MSS-30 metelics FSCM 59365 Metelics MSS60-841-E45
Contextual Info: q metelics Bridge Quad Five Barrier Heights CORPORATION Features • Extremely low junction capacitance [lOOss 1OOff) • Monolithic construction • Small physical size • Good matching of diode junctions • Low series resistance (4 ohms) • Low leakage current |nano amps)

MPND-4005

Abstract: MPND4005 MCE Metelics MBP-1030 metelics anti-parallel
Contextual Info: MTLXS00066 metelics SCHOTTKY FOR MIXER, DOUBLER OR BIASED DETECTOR • ojsmoi4i ' ojeioooq PART NUMBER MSS-30, MSS-40, MSS-50, MSS-60, 142 141 146 144 TYPE VF @ 1 mA mV MAX. RD @ 5 mA SINGLE SINGLE SINGLE SINGLE 230 TO 350 335 TO 505 415 TO 625 580 TO 675

MSS60-448-E45

Abstract: metelics FSCM 59365 M 675 F
Contextual Info: metelics MSS-60,000 Series Extra High Barrier Schottky Diodes CORPORATION Preliminary D ata Sheet Features • Extra high barrier Vp @ 1 m A =» .6 V • L o w I?d - 10 Ohms • Low leakage current < 50 na @ IV typical • N-type • Very high dynamic range

Contextual Info: METELICS CORP T -0 7 -0 7 HE D I bQS13SE Q0ÜQ1Q7 A | MSS-60,000 Series Extra High Barrier Schottky Diodes metelics" CORPORATION Preliminary Data Sheet Features • Extra high barrier VF @ I m A .6 V • Low Rd - 10 Ohm s • Low leakage current < 50 na @ I V typical

Contextual Info: nETELICS CORP SbE D bOS13SE GQGOHCH G4b MET SBHOTTKY CROSSOVER QUAD metelics High Frequency Mixer Series To 26.5 GHz J CORPORATION T-Ol-Ol FEATURES • • • • • • • Extremely Low Junction Capacitance Monolithic Construction Small Physical Size

Contextual Info: SCHOTTKY C O P LA N A R CROSSOVER Q U A D High Frequency Mixer Series To 4 0 GHz m metelics CORPORATION FEATURES • • • • • • • Extremely Low Junction C apacitance Monolithic Construction Small Physical Size Good M atching of Diode Junctions

448-e45

Abstract: metelics FSCM 59365 mss60 MSS-60848-B80 244-B20
Contextual Info: T metelics Extra H igh Barrier Schottky Diodes CORPORATION Preliminary Data Sheet Features • Extra high barrier VF @ I m A « .6 V • L o w Rq - 10 O hm s • L o w leakage current < 50 na @ I V typical • N-type • Very high dynamic range • Available in m any configurations

Contextual Info: SCHOnKY COPLANAR CROSSOVER QUAD High Frequency Mixer Series To 4 0 GHz H id m e te liC S -J c o r p o r a tio n FEATURES • • • • • • • Extremely Low Junction Capacitance Monolithic Construction Small Physical Size Good Matching of Diode Junctions