MSS1830 Search Results

Contextual Info: b?E 1 • SD5304/5314 MSS1830 0011,754 bbb H H 0 N 1 H O NEY l il E LL INC/ MICRO Optoschmitt Detector Open-Collector Output_ FEATURES • TO-18 metal can package • 12° nominal acceptance angle . TTLVLSTTL/CM OS compatible • Open collector output

Contextual Info: SDP8436 Silicon Phototransistor FEATURES • Side-looking plastic package • 18° nominal acceptance angle • Enhanced coupling distance • Internal visible light rejection filter • Low profile for design flexibility • Wide sensitivity ranges • Mechanically matched to SEP8736 infrared

Contextual Info: HFD3855 Silicon PIN Photodiode DESCRIPTION The HFD3855 PIN Photodiode is designed for high speed use in fiber optic receivers. It has a large area detector, providing efficient response to 50 -1000 mm diameter fibers at wavelengths of 750 to 950 nanometers.The

hoa1405-001

Abstract: HOA1405 pic with ir sensor Reflective Optical Sensor focused HOA1405-002 kodak SDP8405 SEP8505 VOC sensor infrared sensor with pic
Contextual Info: H0A1405 Reflective Sensor INFRA-68.TIF DESCRIPTION The HOA1405 series consists of an infrared emitting diode and an NPN silicon phototransistor encased sideby-side on converging optical axes in a black thermoplastic housing. The phototransistor responds to

HOA2862

Abstract: PIC metal detector optical t DD227
Contextual Info: HOA2862 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Wide operating temperature range -55°C to +100°C • Accurate position sensing . 0.100 in.(2.54 mm) slot width DESCRIPTION The HOA2862 series consists of an infrared emitting

VOC sensor

Abstract: HOA1405-002 infrared sensor with pic
Contextual Info: H0A1405 Reflective Sensor INFRA-68.TIF DESCRIPTION The HOA1405 series consists of an infrared emitting diode and an NPN silicon phototransistor encased sideby-side on converging optical axes in a black thermoplastic housing. The phototransistor responds to

Contextual Info: SE3470/5470 AIGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option . 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range