U1 Package
Abstract: MSC 0142
Text: MSiCSS30120 Compliant Silicon Carbide Schottky Power Rectifier 30A, 1200V DESCRIPTION These high current silicon carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities. It provides greater efficiency at higher temperatures than competing
|
Original
|
PDF
|
MSiCSS30120
parall30120
T4-LDS-0108-2,
U1 Package
MSC 0142
|
Untitled
Abstract: No abstract text available
Text: MSiCSS30120 Compliant Silicon Carbide Schottky Power Rectifier 30A, 1200V DESCRIPTION These high current silicon carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities. It provides greater efficiency at higher temperatures than competing
|
Original
|
PDF
|
MSiCSS30120
T4-LDS-0108-2,
|
f30120
Abstract: No abstract text available
Text: MSiCSF30120 Available Silicon Carbide Schottky Power Rectifier 30A, 1200V DESCRIPTION This 1200 V SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities. It provides greater efficiency at higher temperatures than competing
|
Original
|
PDF
|
MSiCSF30120
O-254
T4-LDS-0108-1,
f30120
|
Untitled
Abstract: No abstract text available
Text: MSiCSE30120CC, CA, and D Available Silicon Carbide Dual Schottky Power Rectifier 30A, 1200V DESCRIPTION These dual SiC Schottky rectifiers are in a hermetically sealed package with options for common cathode, common anode, and doubler configurations. They offer very fast switching
|
Original
|
PDF
|
MSiCSE30120CC
O-258
T4-LDS-0108-3,
|
Untitled
Abstract: No abstract text available
Text: MSiCSF30120 Silicon Carbide Schottky Power Rectifier 30A, 1200V Available DESCRIPTION This 1200 V SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities. It provides greater efficiency at higher temperatures than competing
|
Original
|
PDF
|
MSiCSF30120
O-254
O-258
T4-LDS-0108-1,
|
Untitled
Abstract: No abstract text available
Text: MSiCST30120 Available Silicon Carbide Schottky Power Rectifier 30A, 1200V DESCRIPTION This high current silicon carbide Schottky is rated up to 1200 V and offers very fast switching capabilities. It provides greater efficiency at higher temperatures than competing ultrafast
|
Original
|
PDF
|
MSiCST30120
O-204AD
O-254
MSiCSF30120
swi43
T4-LDS-0108,
|
Untitled
Abstract: No abstract text available
Text: MSiCSE30120CC, CA, and D Available Silicon Carbide Dual Schottky Power Rectifier 30A, 1200V DESCRIPTION These dual SiC Schottky rectifiers are in a hermetically sealed package with options for common cathode, common anode, and doubler configurations. They offer very fast switching
|
Original
|
PDF
|
MSiCSE30120CC
O-258
T4-LDS-0108-3,
|
Untitled
Abstract: No abstract text available
Text: MSiCST30120 Available Silicon Carbide Schottky Power Rectifier 30A, 1200V DESCRIPTION This high current silicon carbide Schottky is rated up to 1200 V and offers very fast switching capabilities. It provides greater efficiency at higher temperatures than competing ultrafast
|
Original
|
PDF
|
MSiCST30120
O-204AD
T4-LDS-0108,
|