MS825 Search Results

MS8251

Abstract: P2613 schottky diodes Anti parallel P261
Contextual Info: GaAs Schottky Diodes TM Flip Chip Anti Parallel Low CT MS8251 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features ● Capacitance 45 fF Typ. ● Low Series Resistance (7  Typ.) ● Cut-Off Frequency > 500 GHz

Contextual Info: 256 K x 8 SRAM molaic MS8256RKX-55/70/85 Issue 1.0 : April 1988 M osaic S em iconductor Inc 262,144 x 8 CMOS High Speed Static RAM ADVANCED PRODUCT INFORMATION Features Pin Definition Fast Access Times of 70/85 nS 55nS under developement Standard 3Z pin S1L footprint

Contextual Info: SCHOTTKY DIODES Silicon Low Barrier TM MS8250 – 48 Features For Detector and Mixer Applications Vertical Offset Contact Low Capacitance Package 0.09 pF Available as Bondable Chips Priced for Commercial Applications Specifications @ 25°C Description

Contextual Info: JUM 2 6 1932 256 K x 8 SRAM molate MS8256RKXA-55/70 Issue 1.0 : June 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r 262,144 x 8 CMOS High Speed Static RAM Pin Definition vcc AO A1 A2 A3 00 D1 A4 A5 A6 A7 A8 A13 D2 CS A1S A16 A17 A9 GNO OE A14 D3

MS825

Abstract: D0201AD MS835 MS840 MS845 RM250
Contextual Info: 1 8 Amp Schottky Rectifier MS825 - MS845 : Millim eter Dim. In ch e s Minimum .188 1.00 .285 .046 A B C D Maximum Minimum .260 - .375 .056 4.78 25,4 7.24 1.17 Maximum N otes 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D0201AD D Working Repetitive M ic ro s e m i

pinout 7420

Contextual Info: moiaic 256 K x 8 SRAM MS8256RKXA-55/70 Issue 1.0: June 1992 ADVANCE PRODUCT INFORMATION M o s a ic S e m ic o n d u c to r Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition vcc AO A1 A2 A3 DO 01 A4 AS A6 A7 A8 A13 02 CS A15 A16 A17 A9 GNO OE A14 03

sc 8256

Abstract: ms8256 pin diagram ic 7420
Contextual Info: 256K X 8 SRAM m o l a t MS8256SC-55/70/85 Issue 3.1 : April 1992 e Mosaic Pin Definition Sem iconductor 262,144 X 8 CMOS High Speed Static RAM Features Very Fast Access Times of 55/70/85 ns. JEDEC Standard 32 pin DIL footprint. Operating Power 225 mW typ.

ic tba 220

Contextual Info: w 256K X 8 SRAM MS8256FKXA-10/12/15 molaic Issue 1.0 : August 1990 ADVANCE PRODUCT INFORMATION Sem iconductor '"c r 262,144 x 8 CMOS High Speed Static RAM Features "n Pin Definition A17 A16 A14 A12 A7 Access Times of 100/120/150 ns JEDEC Standard 32 pin OIL footprint

Contextual Info: 8 Amp Schottky Rectifier MS825 - MS845 X ' : Dim. In ch es Minimum A B C Millimeter Maximum Minimum .188 1.00 .285 .046 .260 - .375 .056 4.78 25.4 7.24 1.17 Maximum Notes 6.50 Dia. 9.52 1.42 Oia. - PLASTIC D0201AD 4-c Microsemi C atalog Number Working

Contextual Info: MOSAIC SEMICONDUCTOR INC b 3 5 3 3 7 *1 D D 0 1 S b 3 iiBE D 7ÖO • MOC c 2 J - /y 256K X 8 SRAM moXaic MS8256SC-55/70/85 Issue 3.1 : April 1992 Mosaic ' Pin D efinition Sem iconductor Inc. NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND 262,144 x 8 CMOS High Speed Static RAM

Contextual Info: MOSAI C S E M I C O N D U C T O R INC 53E ]> • b 3 S 3 3 7 T 0 G D 1 2 4 5 7b£ B I M O C 256 K x 8 SRAM moXaic MS8256RKX A-55/70 Issue 1.0 : June 1992 Mosaic ADVANCE PRODUCT INFORMATION Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition

Contextual Info: HAv ì a t*H 256K X 8 SRAM molaic MS8256SC-55/70/85 Issue 3.1 : April 1992 ^ i n Definition S e m ic o n d u c to r NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND 262,144 x 8 CMOS High Speed Static RAM Features Very Fast Access Times of 55/70/85 ns. JEDEC Standard 32 pin DIL footprint.

MS8250

Abstract: P2613
Contextual Info: GaAs Schottky Diodes Flip Chip Anti Parallel Low RS TM MS8250 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features ● Capacitance 65 fF Typ. ● Low Series Resistance (3  Typ.) ● Cut-Off Frequency > 500 GHz

Contextual Info: 256K X 8 SRAM molate MS8256FK-70/85/10/12 Issue 2.0 : September 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 262,144 x 8 CMOS High Speed Static RAM Features Access Times of 70/85/100/120 ns JEDEC Standard 32 pin DIL footprint Operating Power

Contextual Info: GaAs Schottky Diodes Flip Chip Anti Parallel Low RS TM MS8250 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features Capacitance 65 fF Typ. Low Series Resistance (3  Typ.) Cut-Off Frequency > 500 GHz Large Gold Bond Pads

Contextual Info: moì aie 256K X 8 SRAM MS8256FKX-85/10/12 Issue 1.2: August 1990 ADVANCE PRODUCT INFORMATION Mosaic S e m ic o n d u c to r g g g ^ x g ^ Q g H jg h g ^ g ^ R A M Pin Definition Features NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND Access Times of 85/100/120 ns

Contextual Info: MOSAIC SEMICONDUCTOR INC S3E ]> D0D1257 437 • ■ M0 C 256K X 8 S R A M moXaic MS8256SC-10/ 12/15 Issue 2.0 : September 1990 PRELIMINARY Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Features Access Times of 100/120/150 ns JEDEC Standard 32 pin OIL footprint

Contextual Info: GaAs Schottky Diodes Flip Chip Anti Parallel Low CT TM MS8251 – P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features Capacitance 45 fF Typ. Low Series Resistance (7  Typ.) Cut-Off Frequency > 500 GHz Description

sc 8256

Abstract: IC 8256
Contextual Info: 256K X 8 SRAM moìaic MS8256SC-10/12/15 Issue 2 .0 : Septem ber 1990 PRELIMINARY M o sa ic S e m ic o n d u c to r inc. 262,144 x 8 CMOS High Speed Static RAM Features Access Times of 100/120/150 ns JEDEC Standard 32 pin DIL footprint Operating Power 130 mW typ.

oh140

Contextual Info: 256K X 8S R A M molate MS8256FK-45/55 Issue 12. : September 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r inc. Pin Definition 524,288 x 8 CMOS High Speed Static RAM Features NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 AO DO D1 D2 GND Very Fast Access Times of 45/55 ns

Contextual Info: 256K X 8 SRAM m o l a t MS8256SC-025/35/45 e Issue 1.0 : April 1993 ADVANCE PRODUCT INFORMATION Sem iconductor Inc. Pin Definition 262,144 x 8 CMOS High Speed Static RAM Features A14 3 [ A12 4 [ A7 S [ 3 3 3 3 3 AS 6 [ ] A5 7 [ ] 26 A9 A4 8 3 25 A11 24 Ö E

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: MOSAIC SEMICONDUCTOR INC S3E D Wk b35337^ DDG1SS1 TbT • MOC 256 K x 8 SRAM moxaic M S 825 6R K X A -8 5 /1 0 /1 2 /1 5 Issue 1.0: June 1992 Mosaic ADVANCE PRODUCT INFORMATION Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition vcc AO

HSM560

Abstract: DO-215AB
Contextual Info: Schottky Rectifiers Microsemi Division Package Outline Type Mil Data S p e c 1Sheet 10 IO Amps IFSM V F @ I Q VR (Volts) (Amps) (Volts) «I Part Number Microsemi CJ (pF> 1 SR504 MS504 SCF1045 LSM545G LSM545J MSP545 MSS45 MS505 HSM550G HSM550J SR505 HSM560G