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    MRAM BASED MEMORY SOLUTIONS Search Results

    MRAM BASED MEMORY SOLUTIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HNFZAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFZAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    MRAM BASED MEMORY SOLUTIONS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    gaussmeter

    Abstract: Tunneling Magnetoresistance MR2A16A
    Text: Technical Guide MRAM Overview Freescale’s magnetoresistive random access memory MRAM technology combines a magnetic device with standard silicon-based microelectronics to obtain the collective attributes of non-volatility, high-speed operation and unlimited read and write endurance, a


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    MR2A16A gaussmeter Tunneling Magnetoresistance PDF

    MRAM Based Memory Solutions

    Abstract: No abstract text available
    Text: FOR IMMEDIATE RELEASE: July 15, 2010 CONTACT: Teresa Farris MARCOM Manager Aeroflex Colorado Springs 719-594-8035 voice 719-594-8468 (fax) Email: teresa.farris@aeroflex.com www.aeroflex.com/Memories AEROFLEX ANNOUNCES MRAM BASED MEMORY SOLUTIONS TO THEIR FAMILY OF HiRel MEMORIES


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    MRAM

    Abstract: BBSRAM MR2A16A honeywell memory sram
    Text: MRAM Fact Sheet Overview Freescale’s magnetoresistive random access memory MRAM is a revolutionary memory technology that can replace many of today’s semiconductor memory technologies. MRAM combines the speed of SRAM and the non-volatility of flash onto a single chip.


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    megafunction CAN 2.0

    Abstract: No abstract text available
    Text: TriMatrix Memory Selection Using the Quartus II Software November 2002, ver. 2.0 Introduction Application Note 207 TriMatrixTM memory resources in the StratixTM and Stratix GX architecture provide a diverse and powerful set of memory functions that address the


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    Untitled

    Abstract: No abstract text available
    Text: White Paper Implementing a Queue Manager in Traffic Management Systems You can implement a queue manager for traffic management within StratixTM II, Stratix, and Stratix GX devices using the M-RAM memory structure and an external memory component. The large amount of


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    MR256A08B

    Abstract: MR256A08BCYS35 32KX8
    Text: MR256A08B 32Kx8 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System


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    MR256A08B 32Kx8 20-years 44-TSOP 48-BGA MR256A08B MR256A08BCYS35 PDF

    EP1S60

    Abstract: No abstract text available
    Text: TriMatrix Memory Selection Using the Quartus II Software November 2002, ver. 2.1 Introduction Application Note 207 TriMatrixTM memory resources in the StratixTM and Stratix GX architecture provide a diverse and powerful set of memory functions that address the


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    MR1A16ACMA35

    Abstract: mram 128Kx16 MR1A16ACYS35 MR1A16AVYS35 MR1A16AYS35
    Text: MR1A16A 128Kx16 MRAM Memory Features •Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System


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    MR1A16A 128Kx16 20-years 44-TSOP 48-BGA MR1A16ACMA35 mram MR1A16ACYS35 MR1A16AVYS35 MR1A16AYS35 PDF

    MR2A16A

    Abstract: MR2A16ACYS35R mr2a16acma35 MR2A16AMA35 MR2A16AYS35 MR2A16ACYS35 MR2A16AVYS35 400-mil
    Text: MR2A16A 256Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System


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    MR2A16A 256Kx16 20-years 44-TSOP 48-BGA MR2A16A MR2A16ACYS35R mr2a16acma35 MR2A16AMA35 MR2A16AYS35 MR2A16ACYS35 MR2A16AVYS35 400-mil PDF

    MR0A16A

    Abstract: 64Kx16 SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35
    Text: MR0A16A 64Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System


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    MR0A16A 64Kx16 20-years 44-TSOP 48-BGA MR0A16A SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35 PDF

    MR0A08B

    Abstract: MR0A08BCYS35R MRAM MR0A08BCMA35 TSOP-48 FOOTPRINT 48BGA
    Text: MR0A08B 128Kx8 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System


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    MR0A08B 128Kx8 20-years 44-TSOP 48-BGA MR0A08B MR0A08BCYS35R MRAM MR0A08BCMA35 TSOP-48 FOOTPRINT 48BGA PDF

    EP1S60

    Abstract: No abstract text available
    Text: Using TriMatrix Embedded Memory Blocks in Stratix & Stratix GX Devices November 2002, ver. 2.0 Application Note 203 Introduction Stratix and Stratix GX devices feature the TriMatrix™ memory structure, composed of three sizes of embedded RAM blocks. TriMatrix


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    512-bit 512-Kbit EP1S60 PDF

    fifo vhdl

    Abstract: asynchronous fifo vhdl fifo
    Text: FIFO Partitioner Megafunction User Guide 101 Innovation Drive San Jose, CA 95134 408 544-7000 http://www.altera.com UG-IPFIFO-1.2 Document Version: Document Date: 1.2 August 2005 Copyright FIFO Partitioner Megafunction User Guide Copyright 2005 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo,


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    Untitled

    Abstract: No abstract text available
    Text: White Paper Traffic Management in Stratix GX Devices Introduction Data networks were designed to meet the rapidly increasing bandwidth requirements of Internet traffic, which increased line rates by 400 percent every 2 to 3 years. These initial networks were able to handle e-mail and web traffic, but were not able to make service providers a profit.


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    Z0 607 MA GX 652

    Abstract: OG 72 DN 1024 R
    Text: Stratix GX Device Handbook, Volume 1 101 Innovation Drive San Jose, CA 95134 408 544-7000 www.altera.com SGX5V1-1.2 Copyright 2006 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and


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    "Stratix IV" Package layout information

    Abstract: EP1S25F780C7 EP1S30F780C7 S-51005
    Text: Stratix Device Handbook, Volume 1 101 Innovation Drive San Jose, CA 95134 408 544-7000 http://www.altera.com S5V1-1.2 Copyright 2003 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and


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    EP1S80B956C6 EP1S80B956C7 EP1S80 EP1S80F1020C5 EP1S80F1508C6 EP1S80F1508C7 EP1S80* "Stratix IV" Package layout information EP1S25F780C7 EP1S30F780C7 S-51005 PDF

    diode jd 4.7-16

    Abstract: MA4001
    Text: Stratix Device Handbook, Volume 1 101 Innovation Drive San Jose, CA 95134 408 544-7000 http://www.altera.com S5V1-1.2 Copyright 2003 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and


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    166-MHz diode jd 4.7-16 MA4001 PDF

    leoni dacar

    Abstract: Leoni AEC Q100 Q100 FM25640 ignition timing mileage airbag
    Text: focus on electronics Technology New memory technologies pressure flash As drivers request more features and briefs functions, the amount of software needed in vehicles is soaring. Programmers need a place to store their code, so memory capacity is also rising dramatically.


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    31-NOV. com/11038-230X leoni dacar Leoni AEC Q100 Q100 FM25640 ignition timing mileage airbag PDF

    HX5000

    Abstract: honeywell hx3000 DTRA01-03-D-0018 honeywell SOI CMOS HX3000 mil-std-1750a Microprocessor radiation HX2000 S150 DTRA01-03-D-0018-0001
    Text: As the future brings more options, we produce flexible, complete solutions Over the past three decades, Honeywell has been a leading provider of high reliability Integrated Circuit IC solutions for aerospace using advanced technologies designed to withstand the harshest


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    12-Bit AD9225 12-bit, HX5000 honeywell hx3000 DTRA01-03-D-0018 honeywell SOI CMOS HX3000 mil-std-1750a Microprocessor radiation HX2000 S150 DTRA01-03-D-0018-0001 PDF

    MR2A16AMYS35

    Abstract: MR2A16A MR2A16AMA35
    Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


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    MR2A16A AEC-Q100 MR2A16A 304-bit MR2A16AMYS35 MR2A16AMA35 PDF

    876 pin bga

    Abstract: logic diagram to setup adder and subtractor S51005-2 EP1S60
    Text: Stratix Device Handbook, Volume 1 101 Innovation Drive San Jose, CA 95134 408 544-7000 http://www.altera.com S5V1-3.4 Copyright 2006 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and


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    MR0A08B

    Abstract: MR0A08BC MR0A08BCYS35R
    Text: MR0A08B FEATURES 128K x 8 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


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    MR0A08B 20-years MR0A08B 576-bit MR0A08B, MR0A08BC MR0A08BCYS35R PDF

    Untitled

    Abstract: No abstract text available
    Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


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    MR2A16A AEC-Q100 MR2A16A 304-bit EST00193 Rev10 PDF

    write a program of adder or subtractor

    Abstract: EP1S60 SSTL-18 serdes circuitry sdr sdram pcb layout
    Text: Stratix New Levels of System Integration October 2002 New Levels of System Integration Introducing Stratix FPGAs, Altera’s newest product family that breaks the performance and density barriers for high-density programmable logic. The Stratix family is


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