MPS6565 Search Results

Contextual Info: MPS6565K Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.

MPS6566

Abstract: MPS6565 MPS-6565 IC 3180
Contextual Info: MPS6565 SILICON MPS6566 NPN SILIC O N A N N U LA R T RA N SISTO R S NPN SILICO N A M P LIF IER T RA N SISTO R S . . . designed for low -current am plifier applications. • C oH e ctor-E m itte r Bre a kd ow n V oltage — • O u t p u t Capacitance —

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

mpsa25c

Abstract: MPS-A12 MPS6576C
Contextual Info: AL L E GRO MI C ROS Y S T E MS I NC T3 D • 0504330 DDQBSbb - 8514019 SPRAGUE. 7 ■ ALGR , ^ 93D 03566 3 ' X ' f l i l ~\£> SEMICONDS / ICS BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type

2N4123 pnp silicon

Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

2N3904

Abstract: ztx51 MPS3645 2N4401 2N4403 BC183P BC213P BCY59P BCY79P ZTX108
Contextual Info: PNP GENERAL PURPOSE TABLE 2 - continued Max Type V CBO V ceo Max 'c mA V h FE V c E s a t at lc mA mA 10 0 -5 Ib Min Max at Min fT at at Complement lc = 25°C lc mA MHz mA mW V V ZTX531 45 45 500 0 -7 BCY79P 45 45 200 0 -25 10 0 -25 120 460 ZTX213 45 30

2N3638

Abstract: 2N4121 2N4945 TO-106 2N4122 SE1001 2N5855
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VCEO PLASTIC PACKAGE Continued (ALSO SEE LOW LEVEL AN D HIGH VOLTAGE SECTION) V CEO SZ cc LU O > (hfe) LU LL V CE(sat) Cob fT PD ^off MHz ns mA MAX MIN MAX mW

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY CASE M AXIM UM RATINGS Pd IC VCEO mW (mA) (V) HFE min max VCE(sat) fT Cob IC VCE max IC min max max (mA) (V) (V) (mA) (M Hz) (M Hz) (dB) 2 2 2 2 2 4.5 10 10 10 10 - 5 12 12 12 3.5 - - 10 10 10

100ria

Abstract: 25V6K RN5305 2N4494
Contextual Info: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

sprague MPSA05

Contextual Info: SPRAGUE/SEfllCOND 13 GROUP 8 51 40 19 SPRAGUE. D • flS13flS0 ODOBSTl SEMICONDS/ I C S 7 93D 0 3 5 9 1 ■ ' D PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO V _ 60 60

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

n3904

Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Contextual Info: SILICON SIGNAL TRANSISTORS G EN ERAL PURPOSE A M PLIFIERS TO-92 PACKAGE Device bvceo Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

GES5819

Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30

945 MOTHERBOARD CIRCUIT diagram

Abstract: MPS3645 transistor ZTX302 ZTX3711
Contextual Info: NPN GENERAL PURPOSE TABLE 1 - continued Type M P S 3704 \ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 M P S 3706 \ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P M P S 3709 \ ZTX3709 / M P S 371 0\ ZTX3710 /

TP2222

Abstract: TP2222A TP2907A TP3116 MPS6566 TP2483 MPS6515 MPS6516 MPS6517 MPS6518
Contextual Info: ^ Econ olin e R P la stic -M o ld e d If H U U C Silicon S E P T R Transistors GENERAL-PURPOSE SMALL-!IIGNAL AMPLIFIERS >oc < o o. _i Type No. Pd D -C C U R R E N T G A IN h fE Lim ts T a = V (BR) V(BR) V(BR) I c b o C onditions VcE(SAT) 25 C C BO CEO E BO

low noise transistors

Abstract: BC550P ZTX109 2N3804 2N5086 2N5087 2N5209 2N5210 Scans-00106609 BCY65EP
Contextual Info: NPN LOW NOISE T A B LE 5 - NPN SILICO N PLANAR LOW N O ISE T R A N S IS T O R S The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. The devices are listed in order of decreasing collector/emitter breakdown voltage V CE0 ,

GES5819

Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

bcy78

Abstract: BFS98 2N3906 BC559 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA06
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type ^cso (V) Min No. MPS3904 60 VCEO ^EBO Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (V) Min (V) P» (W) Min @Tc=25°c 40 6 0:625 (A) !cbo (ma) Max Vcb (V ) 0.2 'ces (pA) Max

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a