MOTOROLA TRANSISTOR 266 Search Results
MOTOROLA TRANSISTOR 266 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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| TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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| TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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MOTOROLA TRANSISTOR 266 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MJF18008 equivalent
Abstract: MJF18008 MPF930 MTP8P10 MUR105 221D MJE18008 MJE210
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MJE18008/D* MJE18008/D MJF18008 equivalent MJF18008 MPF930 MTP8P10 MUR105 221D MJE18008 MJE210 | |
MSB92WT1
Abstract: SMD310
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MSB92WT1/D MSB92WT1 SC-70/SOT-323 7-inch/3000 MSB92WT1 SMD310 | |
vce 1200 and 5 amps npn transistor to 220 pack
Abstract: 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
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E69369 MJE18004/D* MJE18004/D vce 1200 and 5 amps npn transistor to 220 pack 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105 | |
MJE18006
Abstract: 221D MJE210 MJF18006 MPF930 MTP8P10 MUR105
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MJE18006/D* MJE18006/D MJE18006 221D MJE210 MJF18006 MPF930 MTP8P10 MUR105 | |
MSD42WT1
Abstract: SMD310
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MSD42WT1/D MSD42WT1 SC-70/SOT-323 7-inch/3000 MSD42WT1 SMD310 | |
221D
Abstract: MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105
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MJE18006/D* MJE18006/D 221D MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105 | |
MSB92WT1
Abstract: SMD310 h2d transistor
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MSB92WT1/D MSB92WT1 SC-70/SOT-323 7-inch/3000 MSB92WT1 SMD310 h2d transistor | |
221D
Abstract: MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105
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MJE18008/D* MJE18008/D 221D MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105 | |
221D
Abstract: BUL147 BUL147F BUL44 BUL44F MPF930 MTP8P10
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BUL147/D BUL147* BUL147F* BUL147/BUL147F BUL147/D* 221D BUL147 BUL147F BUL44 BUL44F MPF930 MTP8P10 | |
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
Abstract: 221D BUL147 BUL147F BUL44 BUL44F MPF930 MTP8P10
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BUL147/D BUL147* BUL147F* BUL147/BUL147F BUL147/D* NPN 200 VOLTS 20 Amps POWER TRANSISTOR 221D BUL147 BUL147F BUL44 BUL44F MPF930 MTP8P10 | |
MJ11016 equivalent
Abstract: ferroxcube P3C8 mc7812 MC7812 MOTOROLA MOTOROLA TRANSISTOR motorola bipolar transistor MC7812 equivalent MJL16218 MOTOROLA POWER TRANSISTOR 2N6191
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MJL16218/D MJL16218* MJL16218 MJL16218 MJ11016 equivalent ferroxcube P3C8 mc7812 MC7812 MOTOROLA MOTOROLA TRANSISTOR motorola bipolar transistor MC7812 equivalent MOTOROLA POWER TRANSISTOR 2N6191 | |
100MAdc
Abstract: motorola bipolar transistor GUIDE 40250 Transistor Catalog Bipolar Transistor 40250 power transistor motorola 239 zener
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BD791/D BD791 BD791T O-225 \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 3\ONSM\08032000 100MAdc motorola bipolar transistor GUIDE 40250 Transistor Catalog Bipolar Transistor 40250 power transistor motorola 239 zener | |
BD791
Abstract: MBR340 MSD6100
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BD791/D BD791 BD791 MBR340 MSD6100 | |
MGW20N120
Abstract: transistor d 1557 305 Power Mosfet MOTOROLA
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MGW20N120/D MGW20N120 MGW20N120/D* TransistorMGW20N120/D MGW20N120 transistor d 1557 305 Power Mosfet MOTOROLA | |
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marking DF
Abstract: BF721T1
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BF721T1/D BF721T1 BF721T1/D* marking DF BF721T1 | |
MGW20N120Contextual Info: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGW20N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
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MGW20N120/D MGW20N120 IGBTMGW20N120/D MGW20N120 | |
MGY25N120Contextual Info: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGY25N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
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MGY25N120/D MGY25N120 MGY25N120 | |
transistor motorola 236
Abstract: MGY25N120
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MGY25N120/D MGY25N120 MGY25N120/D* transistor motorola 236 MGY25N120 | |
motorola 6810
Abstract: MJ 6810 MGY40N60
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MGY40N60/D MGY40N60 motorola 6810 MJ 6810 MGY40N60 | |
305 Power Mosfet MOTOROLA
Abstract: Transistor motorola 418 MGW30N60
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MGW30N60/D MGW30N60 MGW30N60/D* 305 Power Mosfet MOTOROLA Transistor motorola 418 MGW30N60 | |
MGP20N60Contextual Info: MOTOROLA Order this document by MGP20N60/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGP20N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
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MGP20N60/D MGP20N60 MGP20N60 | |
MGW20N120Contextual Info: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
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MGW20N120/D MGW20N120 MGW20N120 | |
motorola 039 31
Abstract: MGW12N120 MGW12N
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MGW12N120/D MGW12N120 motorola 039 31 MGW12N120 MGW12N | |
BF721T1
Abstract: SMD310
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BF721T1/D BF721T1 BF721T1 SMD310 | |