VK200 19 4B INDUCTOR
Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
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MRF275L
VK200 19 4B INDUCTOR
arco 462 capacitor
capacitor 680
s12 diode
VK200 4B inductor
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UNELCO
Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
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MRF275L/D
MRF275L
UNELCO
S11 zener diode
motorola MOSFET 935
AN211A
MRF275L
VK200
VK200 4B inductor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts
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MRF6414
MRF6414
DL110/D)
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motorola rf Power Transistor
Abstract: 100 pf, ATC Chip Capacitor 305C BCV62 MRF6401 TL11 Motorola Potentiometer MRF64
Text: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6401 The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0–2.0 GHz frequency range. It has been specifically
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MRF6401/D
MRF6401
MRF6401
SOE200
motorola rf Power Transistor
100 pf, ATC Chip Capacitor
305C
BCV62
TL11
Motorola Potentiometer
MRF64
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Mosfet J49
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND
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MRF171A
Mosfet J49
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Mosfet J49
Abstract: DL110 MRF171A MRF171 VK200 MOTOROLA MASTER RF Products
Text: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz.
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MRF171A/D
MRF171A
Mosfet J49
DL110
MRF171A
MRF171
VK200
MOTOROLA MASTER RF Products
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Motorola Power Transistor Data Book
Abstract: BAS16 MRF6409 DL110 motorola rf Power Transistor NT 407 F TRANSISTOR
Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high
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MRF6409/D
MRF6409
MRF6409
Motorola Power Transistor Data Book
BAS16
DL110
motorola rf Power Transistor
NT 407 F TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF897R/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating
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MRF897R/D
MRF897R
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF897R/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating
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MRF897R/D
MRF897R
MRF897R/D
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BAS16
Abstract: MRF6409 DL110
Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high
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MRF6409/D
MRF6409
MRF6409
BAS16
DL110
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mallory 150 series
Abstract: BD136 MRF897R TL11 GX-0300-55 395E-01
Text: MOTOROLA Order this document by MRF897R/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating
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MRF897R/D
MRF897R
mallory 150 series
BD136
MRF897R
TL11
GX-0300-55
395E-01
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ut-85
Abstract: BD136 MRF897R TL11 35 W 960 MHz RF POWER TRANSISTOR NPN
Text: MOTOROLA Order this document by MRF897R/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating
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MRF897R/D
MRF897R
ut-85
BD136
MRF897R
TL11
35 W 960 MHz RF POWER TRANSISTOR NPN
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motorola rf Power Transistor Data Book
Abstract: Motorola Power Transistor Data Book BAS16 transistor transistor f1 j39 motorola rf device data book
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
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MRF6409
MRF6409
DL110/D)
motorola rf Power Transistor Data Book
Motorola Power Transistor Data Book
BAS16 transistor
transistor f1 j39
motorola rf device data book
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MRF6409
Abstract: BAS16 motorola rf Power Transistor
Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high
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MRF6409/D
MRF6409
MRF6409
BAS16
motorola rf Power Transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 – 970 MHz.
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MRF897R
MRF897R
DL110/D)
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transistor rf m 1104
Abstract: DL110 015 j47 1N4007 BD135 MRF6414
Text: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics
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MRF6414/D
MRF6414
MRF6414
transistor rf m 1104
DL110
015 j47
1N4007
BD135
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905-170
Abstract: MRF3010 VK200 VK20019-4B
Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,
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MRF3010/D
MRF3010
905-170
MRF3010
VK200
VK20019-4B
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,
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MRF3010/D
MRF3010
MRF3010
MRF3010/D
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NT 407 F power transistor
Abstract: DL110
Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high
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MRF6409
MRF6409
MRF6409/D
NT 407 F power transistor
DL110
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sp 0937
Abstract: VK200 inductor of high frequencies Nippon capacitors
Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 100W , 28 V, 500 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
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MRF275L/D
MRF275L
sp 0937
VK200 inductor of high frequencies
Nippon capacitors
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MRF255 equivalent
Abstract: mrf255
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies
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MRF255
MRF255 equivalent
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Mosfet J49
Abstract: MRF171A equivalent SU 179 transistor motorola MRF171a PF 0849 B Nippon capacitors motorola transistor 912
Text: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from 30-200 MHz. •
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MRF171A/D
MRF171A
Mosfet J49
MRF171A equivalent
SU 179 transistor
motorola MRF171a
PF 0849 B
Nippon capacitors
motorola transistor 912
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j718
Abstract: VK200/10-3B
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field E ffect Transistor N-Channel Enhancement-Mode Lateral MOSFET l o w , 1.6 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,
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MRF3010
DL110/D)
MRF3010
VK200
j718
VK200/10-3B
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motorola rf device
Abstract: DL110 BAS16 transistor DL1100 Motorola Power Transistor Data Book
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The M RF6409 is designed for GSM base stations applications. It incorpo rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
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MRF6409
MRF6409
DL110/0)
DL110/D)
motorola rf device
DL110
BAS16 transistor
DL1100
Motorola Power Transistor Data Book
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