MOTOROLA CM 340 A TRANSISTOR Search Results

johanson trim

Contextual Info: MOTOROLA O rder this docum ent by M RF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N-Channel Enhancement-Mode MOSFET D e s ig n e d p rim a rily fo r w id e b a n d la r g e -s ig n a l o u tp u t an d d riv e r fro m

SU 179 transistor

Abstract: SU 179
Contextual Info: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single

F 2452 mosfet

Abstract: DV2820 0823L R K J 0822
Contextual Info: MOTOROLA O rder this docum ent by M RF166C/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 3 0 -5 0 0 MHz. •

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz

2N4851

Abstract: 2N4852 UJT 2N4851 transistor 2n4852 2N4853 2n4852 data IEB20 UJT 2N4852 2N4851 transistor
Contextual Info: M O T O R O L A SC I D IOD ES/ OP TO 2SE D • b 3 b 7 5 S S QQflQ^aO 1 NOT RECOMMENDED FOR NEW DESIGNS I 2N4851 thru 2N4853 PN U nijunction Transistors Silicon Unijunction Transistors . . . designed for pulse and timing circuits, sensing circuits, and thyristor trigger

tme 126

Abstract: transistor TT 2442 MGW12N120D 3EML
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW12N120D/D DATA e Product Preview Data Sheet Insulated Gate BipoMar Transistor with Anti-Parallel Diode N-Channel Enhancement Mode Silicon Gate Ttis Insulated Gate Bipolar Transistor lGB~ is cqackaged

MRF328

Abstract: MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454
Contextual Info: Order this document by AN790/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN790 THERMAL RATING OF RF POWER TRANSISTORS Prepared by: Robert J. Johnsen Reliability is of primary concern to many users of transistors. The degree of reliability achieved is controlled by the device user because he determines the stress levels applied by his circuit and

gp20n60

Abstract: transistor fall time MJ10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power TVansistor w ith Integrated C ollector-E m itter Diode and B uilt-in E fficient A ntisaturation N etw ork POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

L9181

Abstract: l6262 Nippon capacitors L 0946
Contextual Info: MOTOROLA O rder this docum ent by M RF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 1 0 0 - 5 0 0 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc

IN5343

Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 500 MHz. • P ush-P ull Configuration Reduces Even Numbered Harmonics

motorola transistor cross reference

Contextual Info: MOTOROLA Order Number: MC10EP56/D Rev. 0, 04/1999 Semiconductor Components S 0 -2 0 , DW SUFFIX PLASTIC W IDE SO IC PACKAGE CASE 751 D-05 ORDERING INFORMATION M C10EP56DW ’/• SOIC ß j l& PIN DESCRIPTION Product Preview Dual Differential 2:1 M ultiplexer

Contextual Info: MOTOROLA Order this document by MGP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP4N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high

SU 179 transistor

Abstract: Motorola ic 1036 Nippon capacitors
Contextual Info: MOTOROLA O rder this docum ent by M RF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

S2P02

Abstract: S2P02 mosfet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF2P02E Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field E ffect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface

4116 2n

Abstract: BFG 99
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifiers 2N 5484 2N 5486 N -C h a n n e l — Depletion 1 DRAIN MAXIMUM RATINGS Rating D r a in -G a te Voltage R everse G a te - S o u rc e Voltage D rain C u rrent F o rw a rd G a te C u rrent Total D e vice D issipa tion @ T q = 2 5 cC

Contextual Info: MOTOROLA Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGP20N60U Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high

BF441

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JF ET VH F/UHF Am plifier T ran sistor N-Channel MMBF4416LT1 M otorola Preferred Device 2 SOURCE % 1 DRAIN MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Draln-Gate Voltage vdg 30 Vdc Gate-Source Voltage

BU3232

Abstract: motorola cm 340 a transistor 323Z darlington type transistor in ignition motorola transistor ignition motorola ignition BU323Z A/motorola transistor ignition
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323Z ‘Motorola Proforrod D«vlc* Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU3232 is a planar, monolithic, high-voltage power Darlington with a built-in active zener clamping circuit. This device is specifically designed for unclamped,

uhf amplifier design

Abstract: 2N6136 2N5945 Motorola equivalent transistor bc 172 b AN548A j411 Motorola ARCO 465 Compression Trimmer Capacitor 2N5946 MOTOROLA motorola an-282a application AN282A
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN548A/D SEMICONDUCTOR APPLICATION NOTE AN548A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Microstrip Design Techniques for

2N6136

Abstract: uhf amplifier design equivalent transistor bc 172 b ARCO 465 Compression Trimmer Capacitor 2N5946 AN-282A Transistor 2274 AN548A AN555 AN282A
Contextual Info: Order this document by AN548A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN548A MICROSTRIP DESIGN TECHNIQUES FOR UHF AMPLIFIERS Prepared by: Glenn Young power gain of 16 dB and a bandwidth – 1 dB of 8 MHz. Overall efficiency is 48.5% and all harmonics are a minimum

52N06V

Abstract: transistor C 2240 GR
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MTB52N06VL TM O S V M otorola Preferred Oevice Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET 52 AMPERES 60 VOLTS RDS on = 0.025 OHM N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance

Contextual Info: MOTOROLA Order this document by MJE18002D2/D SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith In tegrated C o llecto r-E m itter Diode and B uilt-in Efficient