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    MOTOROLA BIPOLAR TRANSISTOR Search Results

    MOTOROLA BIPOLAR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA BIPOLAR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    POWER BJTs

    Abstract: AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time
    Text: MOTOROLA Order this document by AN1540/D SEMICONDUCTOR APPLICATION NOTE AN1540 Application Considerations Using Insulated Gate Bipolar Transistors IGBTs Prepared by: C.S. Mitter Motorola Inc. DEVICE CHARACTERISTICS The recently introduced Insulated Gate Bipolar Transistor


    Original     		AN1540/D AN1540 AN1540/D* POWER BJTs AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time PDF

    MGW20N120

    Abstract: transistor d 1557 305 Power Mosfet MOTOROLA
    Text: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGW20N120/D MGW20N120 MGW20N120/D* TransistorMGW20N120/D MGW20N120 transistor d 1557 305 Power Mosfet MOTOROLA PDF

    MGY25N120

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGY25N120/D MGY25N120 MGY25N120 PDF

    MGY40N60

    Abstract: motorola 6810
    Text: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGY40N60/D MGY40N60 MGY40N60 motorola 6810 PDF

    MJ 6810

    Abstract: motorola 6810 J 6810 D MGY40N60 TRANSISTOR J 6810
    Text: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGY40N60/D MGY40N60 MGY40N60/D* MJ 6810 motorola 6810 J 6810 D MGY40N60 TRANSISTOR J 6810 PDF

    motorola 039 31

    Abstract: 039 E 31 motorola MGW12N120
    Text: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGW12N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGW12N120/D MGW12N120 IGBTMGW12N120/D motorola 039 31 039 E 31 motorola MGW12N120 PDF

    MGW20N120

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGW20N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGW20N120/D MGW20N120 IGBTMGW20N120/D MGW20N120 PDF

    MGY25N120

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGY25N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGY25N120/D MGY25N120 MGY25N120 PDF

    transistor motorola 236

    Abstract: MGY25N120
    Text: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGY25N120/D MGY25N120 MGY25N120/D* transistor motorola 236 MGY25N120 PDF

    motorola 6810

    Abstract: MJ 6810 MGY40N60
    Text: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGY40N60/D MGY40N60 motorola 6810 MJ 6810 MGY40N60 PDF

    305 Power Mosfet MOTOROLA

    Abstract: Transistor motorola 418 MGW30N60
    Text: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGW30N60/D MGW30N60 MGW30N60/D* 305 Power Mosfet MOTOROLA Transistor motorola 418 MGW30N60 PDF

    MGP20N60

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP20N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGP20N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGP20N60/D MGP20N60 MGP20N60 PDF

    MGW20N120

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGW20N120/D MGW20N120 MGW20N120 PDF

    motorola 039 31

    Abstract: MGW12N120 MGW12N
    Text: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGW12N120/D MGW12N120 motorola 039 31 MGW12N120 MGW12N PDF

    Transistor motorola 418

    Abstract: 305 Power Mosfet MOTOROLA MGW30N60
    Text: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGW30N60/D MGW30N60 MGW30N60/D* Transistor motorola 418 305 Power Mosfet MOTOROLA MGW30N60 PDF

    motorola 039

    Abstract: MGW20N120
    Text: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGW20N120 Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGW20N120/D MGW20N120 O-247 O-247 IGBTMGW20N120/D motorola 039 MGW20N120 PDF

    BD136

    Abstract: MJD47 MRF20060R MRF20060RS MURS160T3 rohm mtbf
    Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts


    Original     		MRF20060R/D MRF20060R MRF20060RS MRF20060R) MRF20060R BD136 MJD47 MRF20060RS MURS160T3 rohm mtbf PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts


    Original     		MRF20060R/D MRF20060R MRF20060RS MRF20060R PDF

    GY25N120

    Abstract: n120 30 igbt
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    OCR Scan     		MGY25 O-264 GY25N120 0E-05 0E-04 0E-03 0E-02 0E-01 GY25N120 n120 30 igbt PDF

    150 nJ

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGW12N120 Insulated G ate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    OCR Scan     		O-247 MGW12N120 150 nJ PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGW 12N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    OCR Scan     		MGW12N120/D 12N120 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW 2 0 N 120 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    OCR Scan     		O-247 20N120 0E-02 0E-01 0E-05 0E-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    OCR Scan     		MGW20N 120/D 20N120 MGW20N120/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGY25N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GY25 N 120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    OCR Scan     		MGY25N 120/D MGY25N120/D PDF