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    STMicroelectronics STH12N120K5-2

    MOSFET N-CH 1200V 12A H2PAK-2
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    Mouser Electronics STH12N120K5-2 1,006
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    STMicroelectronics STW12N120K5

    MOSFET N-CH 1200V 12A TO247
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    TME STW12N120K5 1
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    Avnet Silica STW12N120K5 600 17 Weeks 30
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    STMicroelectronics STH12N120K5-2AG

    AUTOMOTIVE-GRADE N-CHANNEL 1200
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    DigiKey STH12N120K5-2AG Reel 1,000 1,000
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    STH12N120K5-2AG Cut Tape 1,000 1
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    Mouser Electronics STH12N120K5-2AG 769
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    STMicroelectronics STP12N120K5

    MOSFET N-CH 1200V 12A TO220
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    DigiKey STP12N120K5 Tube 880 1
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    STMicroelectronics STWA12N120K5

    MOSFET N-CH 1200V 12A TO247
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    DigiKey STWA12N120K5 Tube 593 1
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    Avnet Americas STWA12N120K5 Tube 16 Weeks 600
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    STMicroelectronics STWA12N120K5 1
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    12N120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12n120

    Abstract: No abstract text available
    Text: Advance Technical Information MegaMOSTMFET VDSS = 1200 V ID cont = 12 A RDS(on)= 1.3 Ω IXTH 12N120 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous


    Original
    PDF 12N120 O-247 728B1 12n120

    Untitled

    Abstract: No abstract text available
    Text: IGBT Optimized for IXGA 12N120A2 IXGP 12N120A2 VCES = 1200 V IC25 = 24 A VCE sat = 3.0 V switching up to 5KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES


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    PDF 12N120A2 O-220AB O-263

    12n120

    Abstract: UPS SIEMENS
    Text: VDSS ID cont RDS(on) trr IXFH 12N120 High Voltage HiPerFET Power MOSFET = 1200 V = 12 A = 1.4 Ω ≤ 300 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS


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    PDF 12N120 O-247 12n120 UPS SIEMENS

    Untitled

    Abstract: No abstract text available
    Text: IXTH 12N120 Power MOSFET, Avalanche Rated High Voltage VDSS = 1200 V ID cont = 12 A RDS(on)= 1.4 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous


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    PDF 12N120 O-247

    12n120

    Abstract: UPS SIEMENS IXTH12N120
    Text: VDSS = 1200 V ID cont = 12 A RDS(on)= 1.4 Ω IXTH 12N120 Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous


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    PDF 12N120 O-247 12n120 UPS SIEMENS IXTH12N120

    Untitled

    Abstract: No abstract text available
    Text: IXFH 12N120 High Voltage HiPerFET Power MOSFET VDSS ID cont RDS(on) trr = 1200 V = 12 A = 1.4 Ω ≤ 300 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS


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    PDF 12N120 O-247

    IXTH 12N120

    Abstract: 12n120 123B16
    Text: Advance Technical Information VDSS = 1200 V ID cont = 12 A RDS(on)= 1.3 Ω IXTH 12N120 Power MOSFET, Avalanche Rated High Voltage Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS


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    PDF 12N120 O-247 728B1 123B1 728B1 065B1 IXTH 12N120 12n120 123B16

    12N120A2

    Abstract: 12n120 IXGA12N120A2 ixga12n12 ixgp12n120
    Text: IGBT Optimized for IXGA 12N120A2 IXGP 12N120A2 VCES = 1200 V = 24 A IC25 VCE sat = 3.0 V switching up to 5KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES


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    PDF 12N120A2 O-220AB O-263 12N120A2 12n120 IXGA12N120A2 ixga12n12 ixgp12n120

    Untitled

    Abstract: No abstract text available
    Text: 12N120K5, 12N120K5 N-channel 1200 V, 0.58 Ω typ., 12 A Zener-protected SuperMESH 5 Power MOSFETs in TO-220FP and TO-3PF Datasheet - preliminary data Features Order codes VDS RDS on max. ID 1200 V 0.69 Ω 12 A 12N120K5 3 3 2 2 1 1 TO-220FP 40 W


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    PDF STF12N120K5, STFW12N120K5 O-220FP STF12N120K5 O-220FP DocID026396

    UL1007 AWG18

    Abstract: DSAAXSA0008960.txt 05N120
    Text: GT-2066 SERIES-65W ISO 9001:2008 REGISTERED 0-65 Watts, 3"X5" Open Frame, Universal Input, Dual and Triple Output Family, ITE Medical Versions See Page 141 INDOOR USE ONLY ELECTRICAL SPECIFICATIONS: INPUT VOLTAGE: UNIVERSAL INPUT FROM 100VAC TO 240VAC INPUT CURRENT:


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    PDF GT-2066 SERIES-65W 100VAC 240VAC LOAD0-3061 UL1007 200mm. AWG18 UL1007 AWG18 DSAAXSA0008960.txt 05N120

    MOLEX 3 pin

    Abstract: UL1015 14 AWG wire
    Text: GTM2066 SERIES-65W 0-65 Watts, 3"X5" Open Frame, Universal Input, Dual and Triple Output Family, Medical ISO 9001:2008 REGISTERED INDOOR USE ONLY DIELECTRIC WITHSTAND VOLTAGE: 4242VDC 3000VAC FROM PRIMARY TO SECONDARY 2121VDC (1500VAC) SECONDARY TO GROUND


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    PDF GTM2066 SERIES-65W 100VAC 240VAC TYPICAL0-3061 UL1007 200mm. AWG18 MOLEX 3 pin UL1015 14 AWG wire

    Untitled

    Abstract: No abstract text available
    Text: GT-2066 SERIES-80W ISO 9001:2008 REGISTERED 0-80 Watts, 3"X5" Open Frame, Universal Input, Dual and Triple Output Family, ITE Medical Versions See Page 135 INDOOR USE ONLY ELECTRICAL SPECIFICATIONS: INPUT VOLTAGE: UNIVERSAL INPUT FROM 100VAC TO 240VAC INPUT CURRENT:


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    PDF GT-2066 SERIES-80W 100VAC 240VAC UL1007/UL1015 100mm.

    12N120K5

    Abstract: STB12N120K5 w12n120
    Text: 12N120K5, 12N120K5 12N120K5, 12N120K5 N-channel 1200 V, 0.58 Ω, 12 A D²PAK, TO-3PF, TO-220, TO-247 Zener-protected SuperMESH 5 Power MOSFET Preliminary data Features TAB Order codes VDSS RDS on max. ID 1 PW 2 3 3 1 12N120K5 250 W 12N120K5


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    PDF STB12N120K5, STFW12N120K5 STP12N120K5, STW12N120K5 O-220, O-247 STB12N120K5 STP12N120K5 12N120K5 w12n120

    Untitled

    Abstract: No abstract text available
    Text: 12N120K5-2, 12N120K5, 12N120K5, 12N120K5 N-channel 1200 V, 0.58 Ω typ.,12 A Zener-protected SuperMESH 5 Power MOSFETs in H2PAK-2, TO-220 and TO-247 Datasheet - preliminary data Features TAB TAB Order codes VDS RDS on max. 1200 V 0.69 Ω 2


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    PDF STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 O-220 O-247 STH12N120K5-2 STP12N120K5 O-220 STW12N120K5

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    molex 5533

    Abstract: No abstract text available
    Text: GTM2066 SERIES-80W 0-80 Watts, 3"X5" Open Frame, Universal Input, Dual and Triple Output Family, Medical ISO 9001:2008 REGISTERED INDOOR USE ONLY ELECTRICAL SPECIFICATIONS: INPUT VOLTAGE: UNIVERSAL INPUT FROM 100VAC TO 240VAC INPUT CURRENT: 1.5A@65W MAXIMUM AT 100VAC FULL LOAD


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    PDF GTM2066 SERIES-80W 100VAC 240VAC UL1007/UL1015 100mm. molex 5533

    12N120K5

    Abstract: STH12N120K5-2 12N120 stp12n120k5 stp12n120k STH12 STW12N120K5
    Text: 12N120K5, 12N120K5-2, 12N120K5, 12N120K5 N-channel 1200 V, 0.58 Ω typ., 12 A, Zener-protected SuperMESH 5 Power MOSFET in TO-3PF, H2PAK-2, TO-220 and TO-247 packages Datasheet − preliminary data Features TAB Order codes VDS RDS on max.


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    PDF STFW12N120K5, STH12N120K5-2, STP12N120K5, STW12N120K5 O-220 O-247 STFW12N120K5 STH12N120K5-2 STP12N120K5 12N120K5 12N120 stp12n120k STH12 STW12N120K5

    12n120

    Abstract: TO247AE
    Text: MOTOROLA Order this document by MGW12N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet Insulated G ate Bipolar TVansistor MGW 12N120 N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage


    OCR Scan
    PDF MGW12N 120/D MGW12N120/D 12n120 TO247AE

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 12N120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGW 12N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


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    PDF MGW12N120/D 12N120

    vq 123

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information Insulated Gate Bipolar Transistor MGW 12N120E N-Channel Enhancement-Mode Silicon Gate This Insulated Sate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


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    PDF O-247 125CC MGW12N120E vq 123

    12N120D

    Abstract: transistor d 1557
    Text: MOTOROLA O rder this docum ent by MGW 12N120D/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGW 12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO-247 12 A @ 90 °C 20 A @ 25°C


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    PDF 12N120D/D QPPHX34717--0 MGW12N120D/D 12N120D transistor d 1557

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 12N120E/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information 12N120E In su late d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


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    PDF MGW12N120E/D

    transistor tic 106 N

    Abstract: bly power transistor transistor tic 226 transistor SE 431
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA D e sig n e r’s Data Sheet M GW 1 2 N 1 2 0 D Insulated G ate Bipolar Transistor with Anti-Parallel Diode Motorola Prafarrad Davlca N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO -247 12 A @ 90 C 20 A @ 25 C


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    PDF

    w12n120

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M G W 12N 120 Insulated G ate Bipolar Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his In su la ted G a te B ip o la r T ra n sisto r IG B T uses an a dva n ce d


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    PDF 12N120 w12n120