MOTOROLA 3-326 TRANSISTOR Search Results

MOTOROLA 3-326 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

MOTOROLA 3-326 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
22 Z1 Abstract: z14 SMT Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060R3 MRF19060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier	Original	MRF19060 MRF19060R3 MRF19060SR3 22 Z1 z14 SMT	PDF
226 35K capacitor Abstract: capacitor 226 35K R 226 35k Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	2170fficiency, MRF21120 MRF21120S 226 35K capacitor capacitor 226 35K R 226 35k	PDF
AN569 Abstract: MTD5N25E SMD310 Text: MOTOROLA Order this document by MTD5N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD5N25E Motorola Preferred Device TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS on = 1.0 OHM	Original	MTD5N25E/D MTD5N25E MTD5N25E/D* AN569 MTD5N25E SMD310	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband	Original	MRF1517T1 AN215A,	PDF
DSP56300 Abstract: DSP56303 G38-87 AA0482 Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or	Original	DSP56303 AA0500 DSP56303/D DSP56300 G38-87 AA0482	PDF
Response AA0482 Abstract: AA0463 AA0470 AA0482 284 278 DSP56300 DSP56302 G38-87 AA-0481 AA0460 Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56302 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56302 specifications are preliminary and are from design simulations, and may not be fully tested or	Original	DSP56302 AA0500 DSP56302/D Response AA0482 AA0463 AA0470 AA0482 284 278 DSP56300 G38-87 AA-0481 AA0460	PDF
LT 5242 Abstract: MC68837 LT 5242 H MC68838KBC MC68839 npa3 MC68836 MAC 04 018 MC68838 SA47 Text: MC68838 Media Access Controller User’s Manual Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it	Original	MC68838 LT 5242 MC68837 LT 5242 H MC68838KBC MC68839 npa3 MC68836 MAC 04 018 MC68838 SA47	PDF
MC6883 Abstract: MC68836 Text: Media Access Controller User’s Manual Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it	Original	MC68838 RABORT2--ADDR16 MC68838 MC6883 MC68836	PDF
MC68836 Abstract: 3291F MC68837 MC68838 MC68839 SA47 header smt Text: MC68838 Media Access Controller User’s Manual Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it	Original	MC68838 MC68838 MC68836 3291F MC68837 MC68839 SA47 header smt	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G r e e n VTV L i n e ' M G SF3442VT1 Prelim inary Inform ation M otorola Preferred D evice Low rDS on Sm all-S ignal MOSFETs TMOS Single N -Channel Field E ffect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET rDS(on) = 58 m !i (TYP)	OCR Scan	SF3442VT1	PDF
Motorola MPSU45 Abstract: b0507 MPSU45 MPS-U10 Motorola MPSU95 MPS-U45 MPS-U06 motorola mpsu05 BD529 MPS-U04 Text: POWER TRANSISTORS — BIPOLAR PLASTIC continued CASE 152 STYLE 1: PIN 1. 2. 3. EMITTER BASE COLLECTOR (COLLECTOR CONNECTED TO TAB) Resistive Sw itching HS t, ^s Max Max ts lcCont Amps Max VcEO (sus) Volts Min 0.5 0.8 1 2 Device Type ^FE M in/M ax @ lc Am p	OCR Scan	MPS-U10 MPS-U60 MPS-U02 MPS-U52 MPS-U03 MPS-U04 BD505 BD506 BD507 MPS-U01 Motorola MPSU45 b0507 MPSU45 Motorola MPSU95 MPS-U45 MPS-U06 motorola mpsu05 BD529 MPS-U04	PDF
IR 92 0151 Abstract: transistor BU 109 bu326 t 326 Transistor transistor BU 184 Text: MO TO RO LA SC XSTRS/R F 12E D \| b3b?2S4 QGâMflQâ 2 \| MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6 AM PERES HIGH VO LTAGE NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS . . . Designed far use in the switch-mode power supplies of colour television receivers.	OCR Scan	AN415A) IR 92 0151 transistor BU 109 bu326 t 326 Transistor transistor BU 184	PDF
unijunction transistor Abstract: No abstract text available Text: M O T O R O L A SC D IOD ES/ OP TO 35E D • . ‘t 3 t 7 a S S OOflCnOb ? ■ NOT RECOMMENDED FOR NEW DESIGNS I 2N3980 PIM Unijunction Transistor Silicon Annular PN Unijunction Transistor . . . designed for military and industrial use in pulse, timing, sensing, and oscillator	OCR Scan	2N3980 unijunction transistor	PDF
MOSFET IRF 570 Abstract: IRF 511 MOSfet irf510 Motorola transistor irf510 IRF510-513 power mosfet irf511 IRF*125 IRF511 MOSFET Transistor motorola 513 511 MOSFET TRANSISTOR motorola Text: MOTOROLA IRF510 IRF511 IRF512 IRF513 SEMICONDUCTOR TECHNICAL DATA Part Num ber v Ds N-CHANNEL ENHANCEMENT-MO DE SILICON GATE T M O S POWER FIELD EFFECT TRANSISTOR IRF510 100 V 0.6 n IRF511 60 V 0.6 0 4.0 A These TM OS Power FETs are designed for low voltage, high	OCR Scan	IRF510 IRF511 IRF512 IRF513 MOSFET IRF 570 IRF 511 MOSfet irf510 Motorola transistor irf510 IRF510-513 power mosfet irf511 IRF*125 IRF511 MOSFET Transistor motorola 513 511 MOSFET TRANSISTOR motorola	PDF

4511 MOSFET Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T D 5N 25E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred D evk:* TM OS POWER FET 5.0 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate This adva n c ed T M O S E - F E T is designed to withstand high	OCR Scan	MTD5N25E 4511 MOSFET	PDF
MRF309 Abstract: 2N3866 MOTOROLA mrf237 MOTOROLA MRF390 TO205AD motorola mrf237 MRF227 MRF329 MRF5177 MRF604 Text: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers T he transistors listed in th ese tab les a re specified for operation in C lass C RF p ow er a m p lifie r circuits. The tables a re arrang ed by increasing frequency of operation first, then by increasing output pow er.	OCR Scan	MRF229 MRF604 2N4427 MRF553 317D-01 MRF607 2N6255 2N3553 MRF237* MRF207 MRF309 2N3866 MOTOROLA mrf237 MOTOROLA MRF390 TO205AD motorola mrf237 MRF227 MRF329 MRF5177	PDF
MOTOROLA 1496 Abstract: transistor equivalent 0107 NA transistor z 0607 Text: MOTOROLA SC XSTRS/R BbE F D b3b7ES4 a[m 2 74 4 Order this data sheet by MG100BZ50/D MOTOROLA SEM ICO N D U CTO R > TECHNICAL DATA Isolated G ate Bipolar Pow er Tran sistor M odule Energy M anagem ent Series These IG B T’s are designed for industrial service under practical operating environments	OCR Scan	MG100BZ50/D MG25BZ50 MOTOROLA 1496 transistor equivalent 0107 NA transistor z 0607	PDF
TFK diodes BYW 76 Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35	OCR Scan		PDF
bux43 Abstract: No abstract text available Text: MOTOROLA Í SC -CXSTRS/R 6367254 F> MOTOROLA SC « DE \| t . 3 b ? S 5 4 CXSTRS/R F 96D 8 0 8 7 4 OOf l Of l VM D T-33-/3 MOTOROLA BUX43 SEMICONDUCTOR TECHNICAL DATA 10 AMPERES s w it c h m o d e a s e r i e s NPN SILICON POWER TRAN SISTO R NPN SILICON POWER	OCR Scan	T-33-/3 BUX43 SeeAN415A) bux43	PDF
BUX43 Abstract: A3931 s35j Text: MOTOROLA r SC -CXSTRS/R 6367254 F> MOTOROLA SC Tb CXSTRS/R F DE \| t , 3 b 7 5 5 M 0 0 f l 0 f l 7 4 96D 80874 T - 33-/3 MOTOROLA BUX43 SEM ICONDUCTOR TECHNICAL DATA 10 AM PERES s w it c h m o d e a s e r i e s NPN SILICO N POWER TRA N SISTO R NPN SILICON	OCR Scan	AN415A) BUX43 A3931 s35j	PDF
MRF163 Abstract: Motorola AN211 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF163 The RF MOSFET Line 25 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2 .0 -4 0 0 M H z N-CHANNEL MOS BROADBAND RF POWER designed for w ideband large-signal output and driver applica tions in the 2 0 to 4 00 MHz range	OCR Scan	MRF163 RF163 MRF163 Motorola AN211	PDF
2n2369a Abstract: 2N2369 2N2369A MOTOROLA 2N2369 equivalent Lg 32lx2r-me Text: MAXIM UM RATINGS Symbol Value Unit C o llector-E m itter Voltage VCEO 15 Vdc C o llector-E m itter Voltage VcES 40 Vdc Collector-Base Voltage VcBO 40 Vdc Em itter-Base Voltage v EBO 4.5 Vdc 'CIPeak 500 mA 200 mA 0.36 2.06 W att mW ;C .68 6.85 W atts m W ',eC	OCR Scan	2N2369 O-206AA) 2n2369a 2N2369A MOTOROLA 2N2369 equivalent Lg 32lx2r-me	PDF
mrf502 gold transistor Abstract: Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911 Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro	OCR Scan	17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 mrf502 gold transistor Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911	PDF
2N3866 MOTOROLA s parameters Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro	OCR Scan	17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 2N3866 MOTOROLA s parameters 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD	PDF

MOTOROLA 3-326 TRANSISTOR Search Results

MOTOROLA 3-326 TRANSISTOR Result Highlights (5)

MOTOROLA 3-326 TRANSISTOR Datasheets Context Search

22 Z1

226 35K capacitor

AN569

Untitled

DSP56300

Response AA0482

LT 5242

MC6883

MC68836

Untitled

Motorola MPSU45

IR 92 0151

unijunction transistor

MOSFET IRF 570

4511 MOSFET

MRF309

MOTOROLA 1496

TFK diodes BYW 76

bux43

BUX43

MRF163

2n2369a

mrf502 gold transistor

2N3866 MOTOROLA s parameters