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    SA47 Search Results

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    SA47 Price and Stock

    Vishay Beyschlag ACASA470124701P100

    RES ARRAY 4 RES 4.7K OHM 1206
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    DigiKey ACASA470124701P100 Digi-Reel 45,420 1
    • 1 $1.05
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    • 100 $0.4712
    • 1000 $0.37676
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    ACASA470124701P100 Cut Tape 45,420 1
    • 1 $1.05
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    ACASA470124701P100 Reel 45,000 1,000
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    • 1000 $0.34586
    • 10000 $0.27291
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    TE Connectivity 28SSA473MKF20N

    POT 47K OHM 0.4W CARBON LINEAR
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    DigiKey 28SSA473MKF20N Box 600 1
    • 1 $5.47
    • 10 $4.603
    • 100 $4.071
    • 1000 $3.37143
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    TE Connectivity 23ESA472MLA50N

    POT 4.7K OHM 0.4W CARBON LINEAR
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    DigiKey 23ESA472MLA50N Bulk 498 1
    • 1 $5.03
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    Mouser Electronics 23ESA472MLA50N 775
    • 1 $5.03
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    Newark 23ESA472MLA50N Bulk 567 1
    • 1 $6.08
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    Master Electronics 23ESA472MLA50N
    • 1 -
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    • 1000 $2.4
    • 10000 $2.4
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    TE Connectivity 23ESA474MMF50NF

    POT 470K OHM 0.4W CARBON LINEAR
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    DigiKey 23ESA474MMF50NF Bulk 422 1
    • 1 $6.11
    • 10 $5.136
    • 100 $4.5426
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    Mouser Electronics 23ESA474MMF50NF 694
    • 1 $6.09
    • 10 $4.74
    • 100 $4.29
    • 1000 $3.5
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    Newark 23ESA474MMF50NF Bulk 227 1
    • 1 $6.66
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    Master Electronics 23ESA474MMF50NF
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    Murata Manufacturing Co Ltd DE2B3SA471KA2BT01F

    CAP CER
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    DigiKey DE2B3SA471KA2BT01F Bulk 375 1
    • 1 $0.5
    • 10 $0.298
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    TTI DE2B3SA471KA2BT01F Bulk 3,000 500
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    • 1000 $0.105
    • 10000 $0.099
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    SA47 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SA47 Semico Silicon Diodes / High Speed Switches Scan PDF
    SA47100 SUSUMU Resistor: Thin Film: 470: 0.12%: 3850: RDL Original PDF
    SA47110 SUSUMU Resistor: Thin Film: 470: 0.24%: 3850: RDL Original PDF
    SA47160 SUSUMU Resistor: Thin Film: 470: 0.06%: 3850: RDL Original PDF
    SA-47A Alpec Team Laser Diode, 0.9mW Power, 645nm Wave Length Original PDF
    SA-47B Alpec Team Laser Diode, 3mW Power, 645nm Wave Length Original PDF
    SA-47C Alpec Team Laser Diode, 0.9mW Power, 660nm Wave Length Original PDF
    SA-47D Alpec Team Laser Diode, 3mW Power, 660nm Wave Length Original PDF
    SA-47F Alpec Team Laser Diode, 0.9mW Power, 665nm Wave Length Original PDF
    SA-47G Alpec Team Laser Diode, 3mW Power, 665nm Wave Length Original PDF

    SA47 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ase S ta tio n A 1M O D tl 8SA DC 450 i II as • FRFQUENCV 450-478 MHz MODE! fR F O IIF N O USA 496 C 406 410 MHz M O D FI fH tO U E N C V BSA KIT 144-512 MHz bsa44oc 440-460 MHz g a in 4.5d8 8 SA4S0C 450-470 MHz TYPE Base Station Kit TYPE DC ground R SA470 C


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    bsa44oc SA470 PDF

    Untitled

    Abstract: No abstract text available
    Text: SA471-033 LOW DROPOUT VOLTAGE REGULATOR 1.0A DESCRIPTION The SA471-033 low dropout linear regulator will provide a fixed output voltage from a fluctuating DC input voltage. The Maximum current TO-252-2L capacity is 1A. FEATURE * Current limit protection * Thermal shutdown protection


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    SA471-033 SA471-033 O-252-2L O-220-3L SA471-033A PDF

    Untitled

    Abstract: No abstract text available
    Text: MC Multi-Contact 8. 0 4 m m L a m e lle n ste cke r SA405 Bestellnr. / Order No. / No de Cde 0 4 m m M u ltila m Plugs 1:1 Au 22.1055 0 4 m m Fiches a lam elles SA479 1:1 Au 22.6205 Bestellnr. / Order No. / No de Cde Auszugskraft - 5 N / Withdrawal force ~ 5 N / Force d'extraction - 5N


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    SA405 SA479 SA481 SA482 SA484 SA486 PDF

    AT49BV320D

    Abstract: AT49BV320DT SA70 AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


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    3581D AT49BV320D AT49BV320DT SA70 AT49BV PDF

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


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    W19B320AT/B w19b320 PDF

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


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    3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom PDF

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


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    Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM PDF

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032 PDF

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


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    PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E PDF

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


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    S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00 PDF

    Untitled

    Abstract: No abstract text available
    Text: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)


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    S29NS-R S29NS01GR, S29NS512R, S29NS256R, S29NS128R S29NS512P S29NS512R. S29VS256R S29VS128R PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORM ATIO N AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce


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    Am29LV033C 63-ball 40-pin PDF

    29F032B

    Abstract: m29f032b
    Text: AMDZ1 Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirem ents ■ ■ M anufactured on 0.32 \im process technology


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    Am29F032B 20-year 29F032B 29F032B m29f032b PDF

    AM29F032

    Abstract: am29f032b-120 AM29F032B-90
    Text: AM D il Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology


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    Am29F032B 20-year 40-pin 44-pin AM29F032 am29f032b-120 AM29F032B-90 PDF

    L323C

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile


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    Am29DL32xC 16-Bit) 29DL32xC L323C PDF

    29LV033C

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce


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    Am29LV033C 63-ball 40-pin 29LV033C PDF

    032XM

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMDB Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce


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    Am29LV033C 63-ball 40-pin 032XM PDF

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


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    EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000 PDF

    3582B

    Abstract: AT49BV322D AT49BV322DT AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


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    3582B AT49BV322D AT49BV322DT AT49BV PDF

    110R

    Abstract: S29GL128N
    Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this


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    Am29LV6402M S29GL128N 110R PDF

    4kw marking

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V


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    DS05-50308-2E MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 59-ball MB84VD22280FA/80FE/90FA/90FE F0311 4kw marking PDF

    marking Ed12

    Abstract: ED9 marking diode DD35 TNETX15VE
    Text: TNETX15VE VLAN-ENGINE ADDRESS-LOOKUP DEVICE SPWS028B – APRIL 1997 – REVISED SEPTEMBER 1997 D D D D D D D D D Provides up to 2K-Address Matching System VLAN Support for Single or Multiple ThunderSWITCH Devices Provides Glueless External-Address Match


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    TNETX15VE SPWS028B TNETX3150/TNETX3150A marking Ed12 ED9 marking diode DD35 TNETX15VE PDF

    FPT-48P-M19

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V


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    DS05-20904-2E MBM29DL32TF/BF-70 MBM29DL32TF/BF MBM29DL32TF/BF F0305 FPT-48P-M19 PDF

    SA70

    Abstract: 2SA31
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES


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    DS05-50212-3E MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 71-ball F0111 SA70 2SA31 PDF