MOSFET WITH 250A CONTINUOUS DRAIN CURRENT Search Results

MOSFET WITH 250A CONTINUOUS DRAIN CURRENT

Abstract: APTM10HM05F
Contextual Info: APTM10HM05F VBUS Q3 Q1 S1 OUT2 G3 OUT1 G1 S3 Q4 Q2 G2 G4 S2 S4 0/VBUS OUT1 G1 VBUS G2 0/VBUS S1 S2 S3 S4 G3 G4 OUT2 VDSS = 100V RDSon = 4.5mΩ typ @ Tj = 25°C ID = 278A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies

APT0406

Abstract: APTM10DUM05T thermistor ntc 103
Contextual Info: APTM10DUM05T VDSS = 100V RDSon = 4.5mΩ typ @ Tj = 25°C ID = 278A @ Tc = 25°C Dual common source MOSFET Power Module D2 Q1 Q2 G1 G2 S1 S2 S NTC1 NTC2 G2 S2 VBUS 0/VBUS OUT OUT S1 S2 NTC2 G1 G2 NTC1 Features • Power MOS V MOSFETs - Low RDSon - Low input and Miller capacitance

APT0406

Abstract: APTM10AM05FT
Contextual Info: APTM10AM05FT VDSS = 100V RDSon = 4.5mΩ typ @ Tj = 25°C ID = 278A @ Tc = 25°C Phase leg MOSFET Power Module NTC2 Q1 G1 OUT S1 Q2 G2 S2 0/VBU S G2 S2 VBUS 0/VBUS NTC1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies

IRCZ44

Abstract: 529B hexsense C-15 C-16
Contextual Info: PD - 9.529B IRCZ44 HEXFET Power MOSFET l l l l l l Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 60V RDS on = 0.028Ω ID = 50*A Description Third Generation HEXFETs from International Rectifier provide the designer with

IRCZ44

Abstract: 529B C-15 C-16
Contextual Info: PD - 9.529B IRCZ44 HEXFET Power MOSFET l l l l l l Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 60V RDS on = 0.028Ω ID = 50*A Description Third Generation HEXFETs from International Rectifier provide the designer with

IRFT001

Abstract: 3001 transistor Q1/HXTR-3001
Contextual Info: M.S.KENNEDY CORP. THREE PHASE BRIDGE MOSFET POWER MODULE 3001 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Pin Compatible with IRFT001 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

3004 IC

Abstract: MPM3004 3004 motor
Contextual Info: M.S.KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3004 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Pin Compatible with MPM3004 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

Contextual Info: M.S.KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3014 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: P and N Channel MOSFETs for Ease of Drive 100 Volt, 10 Amp Full H-Bridge Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

in 3003 TRANSISTOR

Abstract: msk 3003 TRANSISTOR
Contextual Info: M.S.KENNEDY CORP. THREE PHASE BRIDGE MOSFET POWER MODULE 3003 315 701-6751 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: Pin Compatible with MPM3003 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

Contextual Info: PD - 9.529B IRCZ44 HEXFET Power MOSFET l l l l l l Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 60V RDS on = 0.028Ω ID = 50*A Description Third Generation HEXFETs from International Rectifier provide the designer with

Contextual Info: IRFS244 Advanced Power MOSFET FEATURES B V = 250 V ^ D S o n = 0 .2 8 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 0 .2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V

Contextual Info: IRFS350A Advanced Power MOSFET FEATURES B ^ dss - 400 V ♦ Avalanche Rugged Technology = 0.3Q ♦ Rugged Gate Oxide Technology ^ D S o n ♦ Lower Input Capacitance lD = 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

APT0406

Abstract: APTM10DAM05T
Contextual Info: APTM10DAM05T NTC2 VBUS VBUS SENSE CR1 OUT Q2 G2 S2 0/VBU S G2 S2 VBUS VBUS SENSE 0/VBUS NTC1 OUT OUT S2 NTC2 G2 NTC1 VDSS = 100V RDSon = 4.5mΩ typ @ Tj = 25°C ID = 278A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies

sec irfs350

Contextual Info: IRFS350 Advanced Power MOSFET FEATURES B ^ dss - 400 V ♦ Avalanche Rugged Technology = 0.3Q ♦ Rugged Gate Oxide Technology ^ D S o n ♦ Lower Input Capacitance lD = 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

SO402

Abstract: IRCZ44 529B 402d ScansUX1011
Contextual Info: PD-9.529B International k 1Rectifier IRCZ44 HEXFET® Power MOSFET • • • • • • Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 60V ^DS on “ 0 - 0 2 8 0 lD = 50* A

APT0406

Abstract: APTM10SKM05T
Contextual Info: APTM10SKM05T Buck chopper MOSFET Power Module NTC2 Q1 G1 OUT S1 0/VBUS SENSE 0/VBU S 0/ VBUS SENSE VBUS S1 G1 0/ VBUS 0/ VBUS SENSE NTC1 OUT OUT NTC2 Application • AC and DC motor control • Switched Mode Power Supplies Features • Power MOS V MOSFETs

IRFS644A

Abstract: DT250
Contextual Info: IRFS644A Advanced Power MOSFET FEATURES BVDSS = 250 V • Avalanche Rugged Technology RDS on = 0.28 Ω ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ID = 7.9 A ■ Improved Gate Charge ■ Extended Safe Operating Area TO-220F ■ Lower Leakage Current : 10 A (Max.) @ VDS = 250V

Contextual Info: SFR/U9024 Advanced Power MOSFET FEATURES BVDSS = -60 V  Avalanche Rugged Technology RDS on = 0.28 Ω  Rugged Gate Oxide Technology  Lower Input Capacitance ID = -7.8 A  Improved Gate Charge  Extended Safe Operating Area I-PAK D-PAK  Lower Leakage Current : 10 µA (Max.) @ VDS = -60V

IRFM110A

Contextual Info: IRFM110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V

Contextual Info: SFW/I9610 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.75 A Improved Gate Charge Extended Safe Operating Area D2-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -200V

SFS9614

Contextual Info: SFS9614 Advanced Power MOSFET FEATURES BVDSS = -250 V ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology RDS on = 4.0 Ω ν Lower Input Capacitance ν Improved Gate Charge ID = -1.27 A ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V

APTM10DHM05

Contextual Info: APTM10DHM05 Asymmetrical - Bridge MOSFET Power Module Application VBUS Q1 • • • • CR3 G1 OUT2 S1 • CR2 G4 S4 0/VBUS • • - OUT1 VBUS • Power MOS V MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

IRF750A

Contextual Info: IRF750A Advanced Power MOSFET FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology RDS on = 0.3 Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 400V

SFM9210

Contextual Info: SFM9210 Advanced Power MOSFET FEATURES BVDSS = -200 V ! Avalanche Rugged Technology RDS on = 3.0 Ω ! Rugged Gate Oxide Technology ! Lower Input Capacitance ID = -0.5 A ! Improved Gate Charge ! Extended Safe Operating Area SOT-223 ! Lower Leakage Current : 10 µA (Max.) @ VDS = -200V