MOSFET VS SCR Search Results

Contextual Info: Not Available for New Designs, Use VS-FA40SA50LC VS-FA38SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated

Contextual Info: Not recommended for new designs, use VS-FA40SA50LC VS-FA38SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated

Contextual Info: Not recommended for new designs, use VS-FA72SA50LC VS-FA57SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 57 A FEATURES • • • • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating

Contextual Info: Not Available for New Designs, Use VS-FA72SA50LC VS-FA57SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 57 A FEATURES • • • • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating

VS-40MT060WFHT

Abstract: 01100-T
Contextual Info: VS-40MT060WFHT www.vishay.com Vishay Semiconductors Full Bridge IGBT and MOSFET MTP Power Module FEATURES • Generation 4 warp speed IGBT and power MOSFET technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses

Contextual Info: VS-FC80NA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module High Side Chopper - Power MOSFET, 100 A FEATURES 3 D MOSFET • Enhanced body diode dV/dt and dIF/dt capability • Improved gate avalanche and dynamic dV/dt ruggedness 2 (G) 1 (S, K)

1N270 diode equivalent

Abstract: BYV10-30 digital triggering scr diodo Zener 4.1v SCR TRIGGER PULSE TRANSFORMER SCR gate drive circuit AN763 TC913 germanium transistor pnp 1N270
Contextual Info: M AN763 Latch-Up Protection For MOSFET Drivers Author: Microchip Technology Inc. Source P+ VS+ INTRODUCTION Most CMOS ICs, given proper conditions, can “latch” like an SCR , creating a short circuit from the positive supply voltage to ground. This application note

Contextual Info: VS-FC220SA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module Single Switch - Power MOSFET, 220 A FEATURES • Enhanced body diode dV/dt and dIF/dt capability • Improved gate avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche SOA

73847

Abstract: delta vfd AN829 diode torque values AN828 SiE802DF
Contextual Info: AN829 Vishay Siliconix PolarPAK Thermal Impedance Rth vs. Heat Sink Assembly Clamping Torque By Kandarp Pandya 1" (25.4 mm) INTRODUCTION PolarPAK®, the innovative power MOSFET package from Vishay Siliconix, provides enhanced thermal performance, especially when used with a heat sink and

Contextual Info: VS-FB190SA10 www.vishay.com Vishay Semiconductors Power MOSFET, 190 A FEATURES • Fully isolated package • Very low on-resistance • Fully avalanche rated • Dynamic dV/dt rating • Low drain to case capacitance • Low internal inductance • Optimized for SMPS applications

Contextual Info: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance

60aph

Abstract: VS-FA72SA50LC
Contextual Info: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES SOT-227 PRODUCT SUMMARY • • • • • • • Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements

Contextual Info: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance

Contextual Info: VS-FB190SA10 www.vishay.com Vishay Semiconductors Power MOSFET, 190 A FEATURES • Fully isolated package • Very low on-resistance • Fully avalanche rated • Dynamic dV/dt rating • Low drain to case capacitance • Low internal inductance • Optimized for SMPS applications

VS-FB190SA10

Abstract: 125DC
Contextual Info: VS-FB190SA10 Vishay Semiconductors Power MOSFET, 190 A FEATURES • Fully isolated package • Very low on-resistance • Fully avalanche rated • Dynamic dV/dt rating • Low drain to case capacitance • Low internal inductance SOT-227 • Optimized for SMPS applications

Contextual Info: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device

Contextual Info: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device

VS-FB190SA10

Contextual Info: VS-FB190SA10 Vishay Semiconductors Power MOSFET, 190 A FEATURES • Fully isolated package • Very low on-resistance • Fully avalanche rated • Dynamic dV/dt rating • Low drain to case capacitance • Low internal inductance SOT-227 • Optimized for SMPS applications

Contextual Info: VS-FB190SA10 Vishay Semiconductors Power MOSFET, 190 A FEATURES • Fully isolated package • Very low on-resistance • Fully avalanche rated • Dynamic dV/dt rating • Low drain to case capacitance • Low internal inductance SOT-227 • Optimized for SMPS applications

Contextual Info: Not Available for New Designs, Use VS-FB190SA10 FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements

MBR0520T1

Abstract: SIP 9 JP1 CRCW08051001FRT1 VJ0805104KXXAT pwm schematic buck converter PWM 2525 CRCW08052002FRT1 CRCW08052202FRT1 CRCW08053901FRT1 Si9165
Contextual Info: Si9165DB Vishay Siliconix Si9165 Demonstration Board FEATURES D D D D D D D D D D D D D D Voltage Mode Control Fully Integrated MOSFET Switches 600-mA Load Capability 2.7- to 6-V Input Voltage Range for VDD and VS Programmable PWM/PSM Control Up to 2-MHz Switching Frequency in PWM

MBR0520T1

Abstract: SIP 9 JP1 CRCW08051001FRT1 CRCW08052002FRT1 CRCW08052202FRT1 Si9165 Si9169 Si9169DB TSSOP-20 capacitor 1000 MF
Contextual Info: Si9169DB Vishay Siliconix Si9169 Demonstration Board FEATURES D D D D D D D D D D D D D D Voltage Mode Control Fully Integrated MOSFET Switches 1-A Load Capability 2.7- to 6-V Input Voltage Range for VDD and VS Programmable PWM/PSM Control Up to 2-MHz Switching Frequency in PWM

transistors 1UW

Abstract: transistors 1UW 18 p06e
Contextual Info: RFF60P06 21 H A R R 'S 25A+, 60V, Hermetically Packaged, Avalanche Rated P-Channel Enhancement-Mode Power MOSFET Decem ber 1995 Features Package • 2 5 A t, 60V • TO-254AA r D S O N = 0 - 0 3 0 i 2 G A TE • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve

SCR TRIGGER PULSE TRANSFORMER

Abstract: 1N270 diode equivalent 1N270 equivalent LTC4266 SCR 214 TC426 equivalent SCR PULSE TRANSFORMER diode germanium 1n270 SCR IC CHIP scr driver ic
Contextual Info: APPLICATION NOTE 31 LATCH-UP PROTECTION OF CMOS ICs LATCH-UP PROTECTION OF CMOS ICs By RonAN-31 Vinsant INTRODUCTION In most applications, the triggering of the parasitic SCR results in the destruction of the IC. The only time destruction does not occur is when the supply current to the device is