60APH Search Results
60APH Price and Stock
Vishay Semiconductors VS-60APH03-N3DIODE STANDARD 300V 60A TO247AC |
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VS-60APH03-N3 | Tube | 204 | 1 |
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Vishay Semiconductors VS-60APH03-N-S1DIODE STANDARD 300V 60A TO247AC |
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VS-60APH03-N-S1 | Tube |
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Vishay Intertechnologies VS-60APH03-N3Freds - TO-247 - Rail/Tube (Alt: VS-60APH03-N3) |
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VS-60APH03-N3 | Tube | 10 Weeks | 500 |
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VS-60APH03-N3 | 5,257 |
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VS-60APH03-N3 | Bulk | 500 |
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VS-60APH03-N3 | Tube | 500 |
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VS-60APH03-N3 | 552 | 1 |
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VS-60APH03-N3 | 11 Weeks | 25 |
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Vishay Intertechnologies VS-60APH03L-N3Freds - TO-247 (Alt: VS-60APH03L-N3) |
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VS-60APH03L-N3 | 10 Weeks | 500 |
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VS-60APH03L-N3 | 1,206 |
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VS-60APH03L-N3 | Bulk | 484 | 1 |
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VS-60APH03L-N3 | Tube | 500 |
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VS-60APH03L-N3 | 1 |
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VS-60APH03L-N3 | 75 | 11 Weeks | 25 |
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VS-60APH03L-N3 | 50 | 1 |
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Vishay Intertechnologies 60APH03Electronic Component |
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60APH03 | 125 |
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60APH Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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60aph03
Abstract: VS-60APH03-N3 INL16 60aph 60APH03-N3
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VS-60APH03-N3 JEDEC-JESD47 O-247AC VS-60APH03-N3 O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 60aph03 INL16 60aph 60APH03-N3 | |
60aph03Contextual Info: VS-60APH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop Base cathode • Low leakage current • Soft recovery device • 175 °C operating junction temperature |
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VS-60APH03-N3 JEDEC-JESD47 O-247AC VS-60APH03-N3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 60aph03 | |
60aph03Contextual Info: VS-60APH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop Base cathode • Low leakage current • Soft recovery device • 175 °C operating junction temperature |
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VS-60APH03-N3 JEDEC-JESD47 O-247AC VS-60APH03-N3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 60aph03 | |
Contextual Info: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance |
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VS-FA40SA50LC OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
94803
Abstract: 60APH06
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VS-FA40SA50LC OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 94803 60APH06 | |
60APH06
Abstract: VS-GA250SA60S
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VS-GA250SA60S OT-227 E78996 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 60APH06 VS-GA250SA60S | |
Contextual Info: VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance 5 nH typical |
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VS-GP250SA60S E78996 OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft |
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VS-GB90DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse |
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VS-GT140DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft |
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VS-GB90DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
60aph
Abstract: VS-FA72SA50LC
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VS-FA72SA50LC OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 60aph VS-FA72SA50LC | |
Contextual Info: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device |
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VS-FA72SA50LC OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device |
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VS-FA72SA50LC OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance |
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VS-FA40SA50LC OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 250 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) |
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VS-GA250SA60S OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
A 3150 igbt driver
Abstract: VS-GT140DA60U 60APH06
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VS-GT140DA60U OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 A 3150 igbt driver VS-GT140DA60U 60APH06 | |
Contextual Info: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse |
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VS-GT140DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED anti-parallel diodes with ultrasoft |
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VS-GB90DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |