MOSFET V0 Search Results

Contextual Info: PD - 91553F POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFN9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International

J945

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistors MRF177 N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz

Contextual Info: PD - 90495G POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM9140 JANTX2N7236 JANTXV2N7236 JANS2N7236 REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFM9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International

jantx2N7236

Abstract: IRFM9140 JANS2N7236 JANTXV2N7236 c 1384
Contextual Info: PD - 90495G POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM9140 JANTX2N7236 JANTXV2N7236 JANS2N7236 REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFM9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International

IRFN9140

Abstract: JANS2N7236U JANTX2N7236U JANTXV2N7236U
Contextual Info: PD - 91553F POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFN9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International

irf 640

Abstract: IRF 640 mosfet IRF P CHANNEL MOSFET 10A 100V SEC IRF 640 TO-257AA IRFY9140C IRFY9140CM
Contextual Info: PD - 91294D POWER MOSFET THRU-HOLE TO-257AA IRFY9140C, IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International

Zener diode with 9v FOR POWER SUPPLY

Abstract: 9V 1A MOSFET N-channel n02 mosfet MH10 inductor input 5 volt 3 v voltage mosfet marking micrel sot cd sot143 fet
Contextual Info: mica MIC5018 IttyBitty High-Side MOSFET Driver Preliminary Information General Description Features The MIC5018 IttyBitty™ high-side MOSFET driver is de­ signed to switch an N-channel enhancement-type MOSFET from a TTL compatible control signal in high- or low-side

IRFY9140C

Abstract: IRFY9140CM
Contextual Info: PD - 91294C POWER MOSFET THRU-HOLE TO-257AA IRFY9140C IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 91294D POWER MOSFET THRU-HOLE TO-257AA IRFY9140C, IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International

501B 8 P

Abstract: 5018B
Contextual Info: MIC5018 IE ü b IttyBitty High-Side MOSFET Driver L Preliminary Information General Description Features The MIC5018 IttyBitty™ high-side MOSFET driver is de­ signed to switch an N-channel enhancement-type MOSFET from a TTL compatible conlrol signal in high- or low-side

24 volt 200 w to mosfet inverter circuit diagram

Abstract: IRFZ24 SOT-143 D5
Contextual Info: M IC 4 4 1 6 /4 4 1 7 IttyBitty Low-Side MOSFET Driver Preliminary Information General Description Features The MIC4416 and MIC4417 IttyBitty™ low-side MOSFET drivers are designed to switch an N-channel enhancementtype MOSFET from a TTL-compatible control signal in lowside switch applications. The MIC4416 is noninverting and

749 MOSFET TRANSISTOR motorola

Abstract: RF154 dss125
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF154 The RF MOSFET Line RF P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode MOSFET 600 W, 50 V. 80 MHz N-CHANNEL BROADBAND RF POWER MOSFET . . . designed prim arily for linear large*signal output stages in the 2-100 MHz frequency range.

Z9004B

Abstract: aoz9004 12v battery charger circuit diagrams
Contextual Info: ^lwVMMQ_= Single-Cell Battery Protection IC with Integrated MOSFET May 2006 General Description The AOZ9004B is a battery protection IC with integrated dual common-drain N-channel MOSFET. The device includes accurate voltage detectors and delay circuits, and

ufn330

Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel UFN332 UFN333 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance. FEATURES • Fast Switching

Contextual Info: International IGR Rectifier PD -9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Voss 30V — ^DS on = 0.029Q Description Fifth Generation HEXFETs from International Rectifier

arco 406

Abstract: mrf141g transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

HPF730

Abstract: power relay N-channel mosfet
Contextual Info: HPF730 PRELIMINARY N-CHANNEL POWER MOSFET General Description The HPF730 is a n-channel, enhancement-mode, silicon-gate field-effect transistor for use in power applications. The advanced power MOSFET has been designed to provide very low on-state resistance

2N6792

Abstract: 2N6791
Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.8 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rouom and a high transconductance. Fast Switching

Contextual Info: Semiconductor, Inc. TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • The TC4420/4429 are6A peak , single output MOSFET drivers. The TC4429 is an Inverting driver (pin-compatible with the TC429), while the TC4420 is a non-inverting driver.

C123 j.s

Contextual Info: International HSR Rectifier PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Voss = 30V ^DS on = 0.0290 Top View Description

14308D

Abstract: CA3240EI CA3240AE1 "pin-compatible" ca3140s CA3240 CA3240H BW140 ca3240 application circuit
Contextual Info: ö T = / y - / r operational Amplifiera CA3240A, CA3240 Dual BiMOS Operational Amplifiers With MOSFET Input, Bipolar Output Features: • Dual version o f CA3140 ■ Internally compensated ■ MOSFET input stage a Very high input impedance (Z in ) - 1.5 TCI typ.

7A1 zener diode

Abstract: a3140 ca314 simple bass pre amplifier ca314 application notes analog IC CA3140 CA3140S PIN DIAGRAM OF IC CA3140 CA3130 peak detector CA3140AT
Contextual Info: S3 CA3140, CA3140A 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output Features Description • MOSFET Input Stage The CA3140A and CA3140 are integrated circuit operational am pli­ fiers that combine the advantages of high voltage PMOS transis­

si 4422

Abstract: M1C4421
Contextual Info: MIC4421/4422 9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features MIC4421 and MIC4422 MOSFET drivers are rugged, effi­ cient, and easy to use. The MIC4421 is an inverting driver, while the MIC4422 is a non-inverting driver.

QM6001

Abstract: 6004ST diode jr 702 OM6002ST diode t25 4 L0 lateral mosfet audio amplifier OM6001ST OM6003ST OM6004ST OM6101ST
Contextual Info: OM6001ST OM6003ST OM6101ST OM6103ST OM6002ST OM6004ST QM6102ST OM61Q4ST POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-257AA PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET With Or Without Zener Gate Clamp Protection FEATURES • • • • Isolated Hermetic Metal Package