MOSFET RF CLASS AB Search Results

5r1 mosfet transistor

Abstract: mosfet j142 J132 MOSFET 741 datasheet motorola mosfet J137 MOSFET J132 transistor zo 607 ZO 607 MA MRF6522-5R1 SMD transistor 23
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF6522–5/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF6522-5R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A and Class AB common source, linear power

mosfet 4702

Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts

rf power mosfet

Abstract: mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet
Contextual Info: IXZ215N12L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOS TM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications PRELIMINARY Symbol Test Conditions Maximum Ratings

"RF MOSFETs"

Abstract: "RF MOSFET" 731 MOSFET IXZ308N120 mosfet 440 mhz MOSFET RF POWER
Contextual Info: IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast

"RF MOSFET" 300W

Abstract: transistor tl 187 "RF MOSFETs" RF POWER MOSFET IXZ1210N50L 200W vhf "RF MOSFET" class d 200w IXZ12210N50L mosfet class ab rf
Contextual Info: IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 125V operating

Contextual Info: IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast

mosfet 4702

Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating

IXZ2210N50L

Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating

IXZR18N50

Abstract: ixz318n50a
Contextual Info: IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-ChannelEnhancement NChannel EnhancementMode Mode Switch Mode RF MOSFET Low Capacitance Qg and Rg Z-MOSTM MOSFET Process Optimized High dv/dt for RF Operation Ideal Nanosecond for Class Switching C, D, & E Applications

1 RF s 640 a 931

Abstract: "RF MOSFETs" transistor tl 187 IXYS IXZ316N60 mosfet 50V
Contextual Info: IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChannelEnhancement NChannel EnhancementMode Mode Switch Mode RF MOSFET Low Capacitance Qg and Rg Z-MOSTM MOSFET Process Optimized High dv/dt for RF Operation Ideal Nanosecond for Class Switching C, D, & E Applications

j718

Abstract: VK200/10-3B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field E ffect Transistor N-Channel Enhancement-Mode Lateral MOSFET l o w , 1.6 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

IXZ316N60

Abstract: mosfet 50V
Contextual Info: IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V

ixzr08n120a

Contextual Info: IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 1200 V ID25 = 8.0 A Symbol Test Conditions RDS on

IXZ318N50

Contextual Info: IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V

ixzr18n50

Contextual Info: IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 500 V ID25 = 19 A Symbol Test Conditions RDS on

IXYS

Abstract: D600B
Contextual Info: IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement N-Channel Enhancement ModeMode Switch Mode RF MOSFET Low Qg and RZ-MOS g Low Capacitance TM MOSFET Process High for dv/dt Optimized RF Operation Nanosecond Ideal for Class C, D,Switching & E Applications

Arlon

Abstract: MRF282
Contextual Info: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1* MRF282ZR1* RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at

300 uF 450 VDC Mallory Capacitor

Abstract: 365 pF variable capacitor variable capacitor 1 pf Capacitor dimensions MRF282S MRF282Z MRF282
Contextual Info: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282S MRF282Z RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at

27271SL

Abstract: MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310
Contextual Info: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications

transistor z4 n

Abstract: NPN transistor mhz s-parameter mjd310 MRF282
Contextual Info: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at

MRF282

Contextual Info: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at

RE65G1R00

Abstract: 56-590-65/3B ferroxcube ferrite beads CDR33BX104AKWS MRF282SR1 MRF282ZR1 Arlon mjd310 MRF282
Contextual Info: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at

IXZ318N50

Contextual Info: IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 500 V ID25 = 19 A Symbol Test Conditions RDS on ≤ 0.34 Ω VDSS

IXZ211N50

Abstract: IXZ2211N50 DSAE0059430
Contextual Info: IXZ2211N50 Z-MOS RF Power MOSFET Dual N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings Per Device VDSS TJ = 25°C to 150°C