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    IXYS Price and Stock

    IXYS Corporation 92220-T068

    NEW PARTS (Also Known As: IXYS92220-T068)
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    Quest Components 92220-T068 4
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    Littelfuse Inc PGB1010603MR

    ESD Protection Diodes / TVS Diodes 0603 24VDC .06pF
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    TTI PGB1010603MR Reel 257,000 1,000
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    Littelfuse Inc 0297005.WXNV

    Automotive Fuses 32V 5A Mini
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    TTI 0297005.WXNV Bulk 230,900 100
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    Littelfuse Inc V275LA20AP

    Varistors 275V 450pF
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    TTI V275LA20AP Bulk 192,400 100
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    Littelfuse Inc 01000056Z

    Fuse Clips FUSE CLIP
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    TTI 01000056Z Bulk 132,500 100
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    01000056Z Bulk 83,300 100
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    Find more IXYS price and stock on Findchips.com

    IXYS Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    10N60C5M IXYS CoolMOS Power MOSFET Original PDF
    12N60CD1 IXYS HiPerFAST IGBT Lightspeed Original PDF
    14001-00 IXYS 240-Channel OLED Column Driver Original PDF
    14026-00 IXYS 240-Channel OLED Column Driver Original PDF
    14039-00 IXYS 240-Channel OLED Column Driver Original PDF
    14040-00 IXYS 240-Channel OLED Column Driver Original PDF
    14100-00 IXYS 128-Channel OLED Row Driver Original PDF
    14126-00 IXYS 128-Channel OLED Row Driver Original PDF
    14135-00 IXYS 128-Channel OLED Row Driver Original PDF
    14139-00 IXYS 128-Channel OLED Row Driver Original PDF
    14501-00 IXYS 200-Column Cholesteric LCD Driver Original PDF
    14526-00 IXYS 200-Column Cholesteric LCD Driver Original PDF
    14535-00 IXYS 200-Column Cholesteric LCD Driver Original PDF
    14539-00 IXYS 200-Column Cholesteric LCD Driver Original PDF
    150-101N09A-00 IXYS-RF Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET N-CHANNEL DE150 Original PDF
    150-102N02A-00 IXYS-RF Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET N-CHANNEL DE150 Original PDF
    150-201N09A-00 IXYS-RF Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET N-CHANNEL DE150 Original PDF
    150-501N04A-00 IXYS-RF Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET N-CHANNEL DE150 Original PDF
    15201-00 IXYS 128 Column By 80 Row OLED Driver With Controller Original PDF
    15226-00 IXYS 128 Column By 80 Row OLED Driver With Controller Original PDF
    ...

    IXYS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec 2401

    Abstract: 400P DE375-102N10A Directed Energy
    Text: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		PDF DE375-102N10A nec 2401 400P DE375-102N10A Directed Energy

    IXDD408PI

    Abstract: IXDD408 Ultrafast MOSFET Driver 2N7000 IXDD480 VM0580-02F IC TTL 4700 cd4049a fully protected p channel mosfet 2N7000 TO220
    Text: IXDD408PI / 408SI / 408YI / 408CI 8 Amp Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected • High Peak Output Current: 8A Peak • Operates from 4.5V to 25V


    Original     		PDF IXDD408PI 408SI 408YI 408CI 2500pF IXDD408 IXDD480 Edisonstrasse15 D-68623; Ultrafast MOSFET Driver 2N7000 VM0580-02F IC TTL 4700 cd4049a fully protected p channel mosfet 2N7000 TO220

    DE275X2-102N06A

    Abstract: 102N06 DE275X2 102N06A 400P DE-27
    Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in


    Original     		PDF DE275X2-102N06A DE275X2-102N06A 102N06 DE275X2 102N06A 400P DE-27

    vm0580-02f

    Abstract: ixdd414 2N7002/PLP lm339 igbt driver 2N7002 12w smps LM339 414CI IXDD414PI 2N7000 MOSFET protection driving mosfet/igbt with pulse transformer driver
    Text: IXDD414PI / 414YI / 414CI 14 Amp Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch-Up Protected • High Peak Output Current: 14A Peak • Wide Operating Range: 4.5V to 25V


    Original     		PDF IXDD414PI 414YI 414CI IXDD414 IXDD414PI IXDD414YI IXDD414CI O-263 O-220 vm0580-02f 2N7002/PLP lm339 igbt driver 2N7002 12w smps LM339 414CI 2N7000 MOSFET protection driving mosfet/igbt with pulse transformer driver

    IXDD415SI

    Abstract: IXDD415 Ultrafast MOSFET Driver Class E amplifier 2N3904 D-68623 EVDD415 IR high voltage gate driver ic chips
    Text: IXDD415SI Dual 15 Ampere Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: Dual 15A Peak • Wide Operating Range: 8V to 30V


    Original     		PDF IXDD415SI IXDD415 Edisonstrasse15 D-68623; IXDD415SI Ultrafast MOSFET Driver Class E amplifier 2N3904 D-68623 EVDD415 IR high voltage gate driver ic chips

    MCD500

    Abstract: ixys MCC 90 D-68623
    Text: Date: 19.09.2005 IXYS Data Sheet Issue: 3 Thyristor/Diode Modules M## 500 Absolute Maximum Ratings VRRM VDRM [V] MCC MCD MDC MCA MCK MCDA MDCA 2000 500-20io1 500-20io1 500-20io1 500-20io1 500-20io1 500-20io1 500-20io1 2200 500-22io1 500-22io1 500-22io1 500-22io1


    Original     		PDF 500-20io1 500-22io1 MCD500 ixys MCC 90 D-68623

    Untitled

    Abstract: No abstract text available
    Text: IXDD404 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 35V


    Original     		PDF IXDD404 1800pF IXDD404 2N3904 DD404 IXDD404PI IXDD404SI-CT IXDD404SIA IXDD404SI-16CT

    IXDD408CI

    Abstract: ixdd408pi Cd4011a
    Text: PRELIMINARY DATA SHEET IXDD408PI IXDD408YI IXDD408CI Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected • High Peak Output Current: 8A Peak


    Original     		PDF IXDD408PI IXDD408YI IXDD408CI 2500pF IXDD408 IXDD480 Edisonstrasse15 IXDD408CI Cd4011a

    Untitled

    Abstract: No abstract text available
    Text: MX841 IXYS White LED Step-Up Converter with Linear Dimming Control Features: General Description • • • • The MX841 is a fixed frequency, constant current source step-up DC/DC converter. The output current is directly regulated making the MX841 ideal for


    Original     		PDF MX841 MX841

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Untitled

    Abstract: No abstract text available
    Text: An IXYS Company N5177F#200 to N5177F#280 WESTCODE An Date:- 29 Apr, 2010 Data Sheet Issue:- 2 IXYS Company Phase Control Thyristor Types N5177F#200 to N5177F#280 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1


    Original     		PDF N5177F

    IXSH24N60A

    Abstract: No abstract text available
    Text: □ IXYS HiPerFAST IGBT with Diode / IXSH24N60U1S IXSH24N60U1 IXSH24N60AU1 / IXSH24N60AU1S V CES ^C25 V C E sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V v CGR T d = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF IXSH24N60U1S IXSH24N60U1 IXSH24N60AU1 IXSH24N60AU1S 24N60U1 24N60AU1 24N60U1S 24N60AU1S IXSH24N60A

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 36N100 1000V 36A 0.24Q V,DSS ^D25 R,DS on N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test Conditions v DSS Td = 25°C to 150°C


    OCR Scan     		PDF 36N100

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Low VCE sal IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 V CES ^C25 V CE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions vw CES T, = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RaE = 1 M£2


    OCR Scan     		PDF N100U1 N100AU1 O-247 10N100U1 10N100AU1 4bflb22b

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS HiPerFET Power MOSFETs IXFH40N30Q IXFT40N30Q V D S S 300 40 85 < 200 = ^ D 2 5 D Q Class D S o n N-Channel Enhancement Mode Avalanche Rated Highdv/dt, LowQg t r r V A mQ ns Preliminary data Maximum Ratings Symbol Test Conditions V Td = 25°C to 150°C


    OCR Scan     		PDF IXFH40N30Q IXFT40N30Q O-268

    Untitled

    Abstract: No abstract text available
    Text: H b û b 2 2 b 0 0 0 1 Ö 0 3 ^21 I IX Y ID IXYS IG B T w ith D io d e ÌX S N 3 0 N 10 0 A U 1 CES High Short Circuit SOA Capability CE sat = 34 A = 1000 V =4V 2 é * 'T i Symbol Test Conditions V«s Tj = 25°C to 150°C 1000 V v«* Tj = 25°C to 150°C; RGE= 1 M£2


    OCR Scan     		PDF D-68619; 4bflb22b D-68619

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS DSS 2x81-0035/45B Power Schottky Rectifier •f a v V rrm vP 2x80 A 35-45 V 0.64 V P r e lim in a r y D a ta V RRM V 35 45 35 45 RSM Symbol Type b I_ -H - -t-o -W - DSS 2X81-0035B DSS 2X81-0045B Test Conditions Maximum Ratings ^FA V M Tc = 75°C; rectangular, d = 0.5


    OCR Scan     		PDF 2x81-0035/45B 2X81-0035B 2X81-0045B OT-227 flb52fc> GDD470T

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Preliminary data IGBT High Speed IXSH50N60B IXSH50N60BS V CES ^C25 V CE sat Short Circuit SOA Capability = 600 V = 75 A = 2.5 V ?c G TO-247 SMD (\Y m A Maximum Ratings Sym bol Test C onditions VCES T d = 25°C to 150°C 600 V V CGR T d = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF IXSH50N60B IXSH50N60BS O-247

    Untitled

    Abstract: No abstract text available
    Text: Id IXYS • Fast Recovery Epitaxial Diode FRED DSEI60 lFAVM = 69 A VRRM = 200 V trr = 35 ns TO-247 AD c A Sym bol T e st C o n d itio n s ^FRMS "*vj = "*"vjM T c = 85°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by T VJM 98 69 800


    OCR Scan     		PDF DSEI60 O-247 4bflb22b

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 280N07 VDSS ^D25 R DS on Kr N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr V — 280 A 6 mQ < 250 ns 70 s Maximum Ratings Symbol Test C onditions V v DSS


    OCR Scan     		PDF 280N07

    IXFH58N20

    Abstract: No abstract text available
    Text: □ IXYS HiPerFET Power MOSFETs V DSS IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family D DS on ^D25 42 A 60m Q 50 A 45m Q 58 A 40m Q 200 V 200 V 200 V trr < 200 ns TO-247 AD (IXFH) Maximum Ratings


    OCR Scan     		PDF IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 O-247 IXFT58N20 IXFH50N20 IXFM50N20 IXFT50N20 IXFH58N20

    T0.8N100

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information IXGA8N100 IXGP 8N100 IGBT V CES = = = ^C25 V CE sat 1000 V 16 A 2.7 V Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 Mi2 1000 V V GES VGEM Continuous ±20


    OCR Scan     		PDF IXGA8N100 8N100 T0.8N100

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS MCC60 Thyristor Module TRMS •TAVM V RRM, DRM Preliminary data V RSM V RRM V DSM V DRM V V 1700 1600 Conditions I t RMS j I f r m s T vj - T Vjm T c = 85°C ; 180° sine I t SM! I f SM l2dt T vj = T Vjm V R= 0 t = 10 ms 50 Hz , sine t = 8.3 ms (60 Hz), sine


    OCR Scan     		PDF MCC60 O-240 2x100 60-16io1

    MT 1198 AE

    Abstract: 4bob M5Y4
    Text: I X Y S IDE CORP D | HbflbÈSb 00003ÔT fl ~ r- 3 s r ^ J IXYS ADVANCED TECHNICAL DATA SHEET* „TM MOSBLOC DATA SHEET NO. 41006C IGBT MODULE IXGQ75N60Y4 MAXIMUM RATINGS Te = 25 °C unless otherwise Indicated Conditions Rating Collector-Emitter Voltage Symbol


    OCR Scan     		PDF 41006C IXGQ75N60Y4 MT 1198 AE 4bob M5Y4