MOSFET P-CH 43A Search Results

IRFP150A

Abstract: IS43A
Contextual Info: Advanced IRFP150A P o w e r MOSFET FEATURES BV • R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea - ^ D S o n = ■ 175°C O pe ra ting T em pe rature ■ Lo w e r Leakage C urrent : 10 |JA (M ax.) @ V DS = 100V

IRFP3415

Contextual Info: PD - 93962 IRFP3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S HEXFET® Fifth Generation Power MOSFETs from

Contextual Info: A dvanced P o w er Te c h n o l o g y O D O a APT5012JNU3 Os ISOTOP® P O W E R M O S IV< 500V 43A 0.12Í2 Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd

5012JN

Abstract: APT5012JNU3 APTS012JNU3 APT5012
Contextual Info: A dvanced P o w er Te c h n o l o g y O D O A rm m m APT5012JNU3 ISOTOP* 500V 43A 0.12£i Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV< N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratinnc- T

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

f1010e

Abstract: IRFP054N SS2000 DIODE marking le st TO-247AC Package IRF1010N PE10
Contextual Info: PD - 9.1382A IRFP054N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 81A† S Description Fifth Generation HEXFETs from International Rectifier

f1010e

Abstract: to-218 IRF1010N IRFP054N PE10 TOP100-4 A19-B
Contextual Info: PD - 9.1382A IRFP054N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 81A† S Description Fifth Generation HEXFETs from International Rectifier

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?

AN-994

Abstract: IRF1010N IRF1010NS IRF530S
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1372 IRF1010NS PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω

2SK3885-01

Abstract: 2sk3885 43a Hall MS5F5912 hall 43a 2SK388 2sk38 BV150
Contextual Info: DATE DRAWN Sep.-16-'04 CHECKED Sep.-16-'04 CHECKED Sep.-16-'04 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

Contextual Info: IRFP054N l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated TO-247AC Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of

IRFP2907 Application Notes

Abstract: IRFP2907 Mosfet P 110A,
Contextual Info: PD -93906 PROVISIONAL IRFP2907 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS on = 0.0045Ω G ID = 177A† S Description

marking F53

Abstract: AN-994 IRF1010N IRF1010NL IRF1010NS SS2000
Contextual Info: PD - 9.1372A IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.011Ω G ID = 84A†

1RFP250

Abstract: ic HP 1003 WA
Contextual Info: General Description Features 7V to 32V operation Less than 1jj.A standby current in the “O FF” state Internal charge pump to drive the gate of an N-channel power FET above supply M IL-STD-883 Method 5004/5005 version available Available in small outline SOIC packages

C3843

Abstract: 2842AN C3842AN 3842A PWM 3843A 43au
Contextual Info: MOTOROLA UC3842A, 43A UC2842A, 43A • i SEMICONDUCTOR TECHNICAL DATA A d v a n c e I n fo r ma t io n HIGH PERFORMANCE CURRENT MODE CONTROLLER H IG H P E R F O R M A N C E C U R R E N T M O D E C O N TR O LL E R S IL IC O N M O N O L IT H IC I N T E G R A T E D C IR C U IT

semikron skiip 31 nab 12 T 18

Contextual Info: SKHI 61 R . Absolute Maximum Ratings Symbol Conditions L*, '4,1> B*1.-@2 ,6/+-6> I3,4. 7/@3-1 B*1.-@2 &4.,4. ,2-C )46623. &4.,4. -B26-@2 )46623. EL- ; ¥< U$H %-WQ 7]/.)=/3@ 562^423)> E$J? S _3MH $*112).*6 2+/.26 B*1.-@2 72372 -)6*77 .=2 IJKL E5*6 FTZZ9(IJKL7H

tda8510j 2.1 creative amplifiers

Abstract: transistor SMD wm9 SAA7119 IC TDA8510J EQUIVALENT IC NO. LIST Rf based remote control robot using 8051 SAA7119 philips TDA8947J equivalent BLF268 HEF4000B Family specifications TDA8947J
Contextual Info: Semiconductors Choice. Performance. Flexibility. The Philips Portfolio 360º vision of multimedia Introduction to ��������������� � ������������� ������� ��������������

Contextual Info: PD-91517A International I R Rectifier IRF2807 HEXFET Power MOSFET • • • • • A dvanced Process Technology Dynam ic dv/dt Rating 1 7 5 °C O perating Tem perature Fast Switching Fully Avalanche Rated V d s s = 75V R ü S o n = 0 . 0 1 3 £ 2

Texas Instruments Power Management Guide

Abstract: TPS53312 TPS65168 Samsung Exynos 5 TPS65178 ips 500w circuit diagram 500w push-pull power tl598 schematic diagram Acid Battery charger 48 volt circuit tl494 UCC25600 application note Buck-boost TL494
Contextual Info: Power Management Guide www.ti.com/power 2013 Power Management Guide Introduction and Contents Texas Instruments TI offers complete power solu­tions with a full line of highperformance products. These products, which range from standard linear regulators to highly efficient DC/DC

tl4311

Abstract: SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150
Contextual Info: SG388CH/D 2000
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intel 845 MOTHERBOARD pcb CIRCUIT diagram

Abstract: 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram SMD 6cw LM385 1.25V zener 6cw smd code marking mc7812a
Contextual Info: DL128/D Rev. 7, Mar-2002 Analog Integrated Circuits Power Management, Signal Conditioning and ASSP Devices Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

STP4119

Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
Contextual Info: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents