IRF2807 Search Results

igbt 50V 420A

Abstract: 94659 IRF2807Z AN-994 IRF2807ZL IRF2807ZS
Contextual Info: PD - 94659A IRF2807Z IRF2807ZS IRF2807ZL AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET

60V Single N-Channel HEXFET Power MOSFET in a HEX

Abstract: AN-994 IRF2807L irf2807s
Contextual Info: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ

IRF2807

Contextual Info: PD - 91517A IRF2807 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS on = 0.013Ω G Description ID = 82A… S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 94659A IRF2807Z IRF2807ZS IRF2807ZL AUTOMOTIVE MOSFET Features n n n n n n Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET

RF53

Contextual Info: IRF2807S/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L O T CO D E 8 0 2 4 AS S E M B L E D O N W W 0 2 , 2 0 0 0 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL

AN-994

Abstract: IRF2807ZPBF
Contextual Info: PD - 95488A IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

IRF2807PBF

Contextual Info: PD - 94970 IRF2807PbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 75V l RDS on = 13mΩ G ID = 82A‡

irf1010e equivalent

Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
Contextual Info: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N

AN-994

Abstract: IRF2807Z IRF2807ZL IRF2807ZS
Contextual Info: PD - 95488 AUTOMOTIVE MOSFET Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF

Contextual Info: IRF2807 TO-220AB l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Power MOSFET Description D The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

IRF2807PBF

Abstract: IRF1010
Contextual Info: PD - 94970A IRF2807PbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 75V RDS on = 13mΩ G ID = 82A‡ S Description

Contextual Info: PD - 95488A IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

AN-994

Abstract: IRF2807L IRF2807S
Contextual Info: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International

Contextual Info: International IG R Rectifier pd-ms« IR F 2 8 0 7 S /L preliminary HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF2807S • Low-profile through-hole (IRF2807L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

Contextual Info: IRF2807S IRF2807L Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l TO-262 IRF2807L D2Pak IRF2807S l Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve

igbt 50V 420A

Abstract: diode 53a AN-994 IRF2807Z IRF2807ZL IRF2807ZS
Contextual Info: PD - 94659A IRF2807Z IRF2807ZS IRF2807ZL AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET

IRF2807

Abstract: DIODE y 12 MOSFET IRF 570
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1517 IRF2807 PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS on = 0.013Ω G Description

Contextual Info: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International

Contextual Info: IRF2807PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584)

IRF2807

Abstract: irf2807 equivalent 5v 10A regulator
Contextual Info: PD - 91517A IRF2807 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS on = 0.013Ω G Description ID = 82A… S Fifth Generation HEXFETs from International Rectifier

mosfet k 61 y1

Abstract: IRF2807 AN-994 IRF2807L IRF2807S
Contextual Info: PD - 91518A IRF2807S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF2807S Low-profile through-hole (IRF2807L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS(on) = 0.013Ω G ID = 82A†

AN-994

Abstract: IRF2807Z IRF2807ZL IRF2807ZS
Contextual Info: PD - 95488 AUTOMOTIVE MOSFET Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF

irf2807

Abstract: irf2807 equivalent application of IRF2807
Contextual Info: PD - 91517 IRF2807 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS on = 13mΩ G ID = 82A‡ S Description Advanced HEXFET® Power MOSFETs from International

IRF2807

Contextual Info: PD - 91517 IRF2807 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS on = 13mΩ G ID = 82A‡ S Description Advanced HEXFET® Power MOSFETs from International