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    MOSFET IRF630 Search Results

    MOSFET IRF630 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRF630 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    SEC irf630

    Abstract: IRF630 SEC irf630 datasheet CIRF630 irf630 IRF630 p 4.5V to 100V input regulator 4.5V TO 100V INPUT REGULATORS
    Text: IRF630 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high ‹ Dynamic dv/dt Rating speed power switching applications such as switching ‹ Repetitive Avalanche Rated regulators, converters, solenoid and relay drivers.


    Original     		PDF IRF630 O-220 IRF630. SEC irf630 IRF630 SEC irf630 datasheet CIRF630 irf630 IRF630 p 4.5V to 100V input regulator 4.5V TO 100V INPUT REGULATORS

    200v mosfet

    Abstract: n mosfet low vgs 200 A 200V mosfet irf630 equivalent low igss mosfet low vgs mosfet irf630 irf630 IRF630 mosfet irf630 datasheet
    Text: INCHANGE MOSFET IRF630 N-channel mosfet transistor ‹ Features 123 ・With TO-220 package ・Low on-state and thermal resistance ・Fast switching ・VDSS=200V; RDS ON ≤0.4Ω;ID=9A ・1.gate 2.drain 3.source ‹ Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER


    Original     		PDF IRF630 O-220 O-220 200v mosfet n mosfet low vgs 200 A 200V mosfet irf630 equivalent low igss mosfet low vgs mosfet irf630 irf630 IRF630 mosfet irf630 datasheet

    low igss

    Abstract: TO-220f Package TRANSISTOR mosfet irf630f 200v mosfet mosfet NA n mosfet low vgs N-Channel MOSFET 200v mosfet low vgs
    Text: INCHANGE MOSFET IRF630F N-channel mosfet transistor ‹ Features ・With TO-220F package ・Low on-stateand thermal resistance ・Fast switching ・VDSS=200V; RDS ON ≤0.4Ω;ID=9A ・1.gate 2.drain 3.source 123 ‹ Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER


    Original     		PDF IRF630F O-220F O-220F low igss TO-220f Package TRANSISTOR mosfet irf630f 200v mosfet mosfet NA n mosfet low vgs N-Channel MOSFET 200v mosfet low vgs

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFET IRF630 MOSFET N-Channel TO-220 1. GATE FEATURES 2. DRAIN 3. SOURCE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units ID @TC=25℃ Continuous Drain Current, VGS @ 10 V


    Original     		PDF O-220 IRF630 O-220

    Untitled

    Abstract: No abstract text available
    Text: IRF630 RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Ease of Paralleling D Fast Switching Characteristic Simple Drive Requirement G BVDSS 200V RDS ON 0.4 ID 9.0A S Description G APEC MOSFET provide the power designer with the best combination of fast


    Original     		PDF IRF630 O-220 20acteristics 100us

    irf630

    Abstract: IRF630 p for IRF630
    Text: IRF630 RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Ease of Paralleling D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G BVDSS 200V RDS ON 0.4Ω ID 9.0A S Description APEC MOSFET provide the power designer with the best combination of fast


    Original     		PDF IRF630 O-220 100us irf630 IRF630 p for IRF630

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    lt1910 application note

    Abstract: No abstract text available
    Text: LT1910 Protected High Side MOSFET Driver Features Description 8V to 48V Power Supply Range Protected from –15V to 60V Supply Transients Short-Circuit Protected Automatic Restart Timer Open-Collector Fault Flag Fully Enhances N-Channel MOSFET Switches Programmable Current Limit, Delay Time and


    Original     		PDF LT1910 LTC1693 LTC1710 /300mA LTC4412 com/LT1910 1910fb lt1910 application note

    1N5994B

    Abstract: No abstract text available
    Text: LT1161 Quad Protected High-Side MOSFET Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO 8V to 48V Power Supply Range Protected from – 15V to 60V Supply Transients Fully Enhances N-Channel MOSFET Switches Individual Short-Circuit Protection


    Original     		PDF LT1161 20-Lead LT1161 LT1910 LTC1922-1 LTC1923 28-Pin 1161fa 1N5994B

    IRFZ44 equivalent

    Abstract: SEC irf630 nec ps2501-4 1RFZ24 motor driver IRFZ44 LT1161CN MOTOROLA IRF630 marking IRFZ34 mosfet IRF630 MOTOR CONTROL CIRCUIT l1161
    Text: LT1161 Quad Protected High-Side MOSFET Driver U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 8V to 48V Power Supply Range Protected from – 15V to 60V Supply Transients Fully Enhances N-Channel MOSFET Switches Individual Short-Circuit Protection


    Original     		PDF LT1161 20-Lead LT1161 LT1910 LTC1922-1 LTC1923 28-Pin 1161fa IRFZ44 equivalent SEC irf630 nec ps2501-4 1RFZ24 motor driver IRFZ44 LT1161CN MOTOROLA IRF630 marking IRFZ34 mosfet IRF630 MOTOR CONTROL CIRCUIT l1161

    Untitled

    Abstract: No abstract text available
    Text: N-Channel MOSFET Transistors Part No. Drain-Source On-State Braekdown DS Current Voltage Static DS Resistance Part No. MOSFET Drain-Source On-State Braekdown DS Current Voltage Static DS Resistance Package Bulk/Reel BVDSS V ID(ON)(A) RDS(ON)(Ω) BVDSS(V)


    Original     		PDF 2N7000 2N7000A IRF510 IRF610 IRF620 IRF624 IRF630 IRF633 IRF634 IRFZ14

    stepper motor using irfz44

    Abstract: mosfet motor dc 48v SEC irf630
    Text: LT1910 Protected High Side MOSFET Driver U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 8V to 48V Power Supply Range Protected from –15V to 60V Supply Transients Short-Circuit Protected Automatic Restart Timer Open-Collector Fault Flag Fully Enhances N-Channel MOSFET Switches


    Original     		PDF LT1910 1N6011B 1N4148 4/300mA 1910f stepper motor using irfz44 mosfet motor dc 48v SEC irf630

    motor stepper driver IRFZ44

    Abstract: LT1910 SEC irf630 DIODE ZENER 2.9V stepper motor using irfz44 IRFZ44 mosfet IRFZ34 LT1910ES8 LTC1266 back to back zener diode applicatio
    Text: LT1910 Protected High Side MOSFET Driver U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 8V to 48V Power Supply Range Protected from –15V to 60V Supply Transients Short-Circuit Protected Automatic Restart Timer Open-Collector Fault Flag Fully Enhances N-Channel MOSFET Switches


    Original     		PDF LT1910 LTC1693 LTC1710 4/300mA LTC4412 sn1910 1910fs motor stepper driver IRFZ44 LT1910 SEC irf630 DIODE ZENER 2.9V stepper motor using irfz44 IRFZ44 mosfet IRFZ34 LT1910ES8 LTC1266 back to back zener diode applicatio

    IRF510N

    Abstract: MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220
    Text: Power MOSFET Selection Guide Power MOSFET Products DUAL DIE POWER MOSFETs BVDSS VOLTS ID AMPS rDS ON OHMS VGS = 10V rDS(ON) OHMS VGS = 5V TYPE MS-012AA (SO-8) TS-001AA MO-169AB 12 3.50 - 0.050 Dual N RF1K49090 - - 12 3.50 - 0.130 Dual P RF1K49093 - - 12 2.5/3.5


    Original     		PDF MS-012AA TS-001AA MO-169AB RF1K49090 RF1K49093 RF1K49092 RF3S49092SM RF3V49092 RF1K49223 RF1K49088 IRF510N MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220

    LT1910IS8

    Abstract: 1910e SCR 100V 1A stepper motor using irfz44 SEC irf630 LTC1255 IRFZ34 LT1910 LT1910ES8 1910i
    Text: LT1910 Protected High Side MOSFET Driver FEATURES DESCRIPTION n The LT 1910 is a high side gate driver that allows the use of low cost N-channel power MOSFETs for high side switching applications. It contains a completely self-contained charge pump to fully enhance an N-channel MOSFET switch with


    Original     		PDF LT1910 LTC1693 LTC1710 4/300mA LTC4412 1910fa LT1910IS8 1910e SCR 100V 1A stepper motor using irfz44 SEC irf630 LTC1255 IRFZ34 LT1910 LT1910ES8 1910i

    tektronix 576 curve tracer

    Abstract: No abstract text available
    Text: VISHAY SILICONIX Power MOSFETs Application Note AN-957 Measuring Power MOSFET Characteristics TABLE OF CONTENTS Page 1. General Information . 2


    Original     		PDF AN-957 18-Nov-10 tektronix 576 curve tracer

    tektronix 576 curve tracer

    Abstract: tektronix type 576 curve tracer curve tracer specification of curve tracer AN-957 12 VOLTS CIRCUIT USING MOSFET IRF630 AN957 short circuit tracer INT-944
    Text: Application Note AN-957 Measuring HEXFET MOSFET Characteristics Table of Contents Page 1. General Information. 1 2. BVDSS . 3


    Original     		PDF AN-957 tektronix 576 curve tracer tektronix type 576 curve tracer curve tracer specification of curve tracer AN-957 12 VOLTS CIRCUIT USING MOSFET IRF630 AN957 short circuit tracer INT-944

    IRFS630B

    Abstract: IRFS630 IRF630B
    Text: IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF630B/IRFS630B IRFS630B IRFS630 IRF630B

    Irf640 irf9540

    Abstract: IRFR220TF IRF510 mosfet irf640 451 MOSFET KSP44 IRFR9120-TF STR 456 2n3904 2n3906 KST2222ATF IRFR120TF
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Power MOSFET S/STR Standard MOSFET PART NO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907A-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 Irf640 irf9540 IRFR220TF IRF510 mosfet irf640 451 MOSFET KSP44 IRFR9120-TF STR 456 2n3904 2n3906 KST2222ATF IRFR120TF

    MOS-Gated Thyristor

    Abstract: optoisolator H11L1
    Text: Application Notes Common-Drain Power-MOSFET Gate-Drive Solutions Using the H11N/L Optoisolators Introduction Power-MOSFET devices in the half-bridge configuration, Fig 1, are becom ing popular fo r both sw itching -po w e rsuppliesand PWM pulse-w idth-m odulated m o torco ntro ls.


    OCR Scan     		PDF H11N/L MOS-Gated Thyristor optoisolator H11L1

    IRF630 MOTOR CONTROL CIRCUIT

    Abstract: H11L MOS-Gated Thyristor GE h11l1 IRF630 Transistor
    Text: Application Notes Common-Drain Power-MOSFET Gate-Drive Solutions Using the H11N/L Optoisolators Introduction Power-MOSFET devices in the ha lf-brid ge con figura tion, Fig. 1, are becom ing popular fo r both sw itching-pow ersuppliesandP W M pulse-w idth-m odulated m otor controls.


    OCR Scan     		PDF H11N/L 92Cs-« IRF630 MOTOR CONTROL CIRCUIT H11L MOS-Gated Thyristor GE h11l1 IRF630 Transistor