MOSFET CHARACTERISTCS Search Results

RDD050N20

Contextual Info: RDD050N20 Transistors 10V Drive Nch MOSFET RDD050N20 zDimensions Unit : mm zStructure Silicon N-channel MOSFET CPT3 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. (1)Base(Gate) (2)Collector(Drain)

RDD050N20

Contextual Info: RDD050N20 Transistors 10V Drive Nch MOSFET RDD050N20 zDimensions Unit : mm zStructure Silicon N-channel MOSFET CPT3 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. (1)Base(Gate) (2)Collector(Drain)

RDX030N60

Contextual Info: RDX030N60 Transistors 10V Drive Nch MOSFET RDX030N60 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.

capacitor electrolyte

Abstract: 17520 transistor
Contextual Info: Power 1C BIC1222 Bellnix <Summary> BIC1222 is a high efficiency POWER-IC of MCM multi chip module with synchronous rectification system chopper control, N channel MOSFET of main switch and low side MOSFET for synchronous rectification. Maximum output is 5A and the input voltage range is 8V-20V. The functions such

17520 transistor

Abstract: ax3217
Contextual Info: Power 1C BIC1222 Bellnix' <Summary> BIC1222 is a high efficiency POWER-IC of MCM multi chip module with synchronous rectification system chopper control, N channel MOSFET of main switch and low side MOSFET for synchronous rectification. Maximum output is 5A and the input voltage range is 8V-20V. The functions such

CPC1030N

Abstract: CPC1030NTR CPC1030NTR-1 EIA-481-2
Contextual Info: CPC1030N 4 Pin SOP OptoMOS Relay Blocking Voltage Load Current Max RON CPC1030N 350 120 30 Description The CPC1030N is a miniature 1-Form-A solid state relay in a 4 pin SOP package that employs optically coupled MOSFET technology to provide 1500Vrms of input to output isolation. The efficient MOSFET

50W car power amplifier tda7850

Abstract: tda7850 FLEXIWATT25 equivalent 4x50W TDA7850H 30W hi-fi audio power amplifier car class d audio 50W amp dim hsd nv
Contextual Info: TDA7850 4 x 50W MOSFET Quad bridge power amplifier plus HSD Features • Superior output power capability: 4 x 50W/4Ω Max. 4 x 30W/4Ω @ 14.4V, 1KHz, 10% 4 x 80W/2Ω Max. 4 x 55W/2Ω @ 14.4V, 1KHz, 10% ■ MOSFET Output power stage ■ Excellent 2Ω driving capability

MOSFET Termination Structure

Contextual Info: rz7 SGS-THOMSON ^ 7 Mm [ j ^ 0 [ K ] Q i [ L [ l © i r [ Ë ] W 0© S A P P L IC A T IO N N O T E HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET-transistor are fabricated using VLSI technology. A simple chip contains thousands

Contextual Info: Not recommended for new designs, use VS-FA40SA50LC VS-FA38SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated

Contextual Info: Not Available for New Designs, Use VS-FA40SA50LC VS-FA38SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated

Contextual Info: VS-FC220SA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module Single Switch - Power MOSFET, 220 A FEATURES • Enhanced body diode dV/dt and dIF/dt capability • Improved gate avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche SOA

Contextual Info: VS-FC220SA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module Single Switch - Power MOSFET, 220 A FEATURES • Enhanced body diode dV/dt and dIF/dt capability • Improved gate avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche SOA

Contextual Info: FA57SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 57 A FEATURES • • • • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements

INTEGRATOR 9435

Abstract: mosfet 62N 4435 mosfet TQFP48 VRD10 CDF-AEC-Q100-002 CS216 L6711 L6711TR K2750
Contextual Info: L6711 3 Phase controller with dynamic VID and selectable DACs Features • 2A integrated gate drivers ■ Fully differential current reading across inductor or LS MOSFET ■ 0.5% Output voltage accuracy ■ 6 bit programmable output from 0.8185V to 1.5810V in 12.5mV steps

Contextual Info: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance

B60N06

Abstract: L9380 SO20 charge pump mosfet driver external
Contextual Info: L9380 TRIPLE HIGH-SIDE MOSFET DRIVER • ■ ■ ■ ■ ■ OVERVOLTAGE CHARGE PUMP SHUT OFF FOR VVS > 25V REVERSE BATTERY PROTECTION REFERRING TO THE APPLICATION CIRCUIT DIAGRAM PROGRAMMABLE OVERLOAD PROTECTION FUNCTION FOR CHANNEL 1 AND 2 OPEN GROUND PROTECTION FUNCTION

Contextual Info: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance

L6711-based

Abstract: CDF-AEC-Q100-002 L6711 L6711TR TQFP48 VRD10 K2750
Contextual Info: L6711 3 Phase controller with dynamic VID and selectable DACs Features • 2A integrated gate drivers ■ Fully differential current reading across inductor or LS MOSFET ■ 0.5% Output voltage accuracy ■ 6 bit programmable output from 0.8185V to 1.5810V in 12.5mV steps

"SOT-227" dimensions

Contextual Info: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance

Contextual Info: FA38SA50LCP Vishay High Power Products HEXFET Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel RoHS • Low on-resistance COMPLIANT • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements SOT-227

60aph

Abstract: VS-FA72SA50LC
Contextual Info: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES SOT-227 PRODUCT SUMMARY • • • • • • • Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements

Contextual Info: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance

FA38SA50LCP

Contextual Info: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance

B60N06

Abstract: SMB7W01-200
Contextual Info: L9380 TRIPLE HIGH-SIDE MOSFET DRIVER • ■ ■ ■ ■ ■ OVERVOLTAGE CHARGE PUMP SHUT OFF FOR VVS > 25V REVERSE BATTERY PROTECTION REFERRING TO THE APPLICATION CIRCUIT DIAGRAM PROGRAMMABLE OVERLOAD PROTECTION FUNCTION FOR CHANNEL 1 AND 2 OPEN GROUND PROTECTION FUNCTION