FDU7N60
Abstract: FDD7N60n FDD7N60NZ FDU7N60NZ
Text: FDD7N60NZ / FDU7N60NZ N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 Features Description • RDS on = 1.05 (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state
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FDD7N60NZ
FDU7N60NZ
FDU7N60NZ
FDU7N60
FDD7N60n
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Untitled
Abstract: No abstract text available
Text: Synchronous Rectified Buck MOSFET Drivers ISL6625A Features The ISL6625A is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. • Dual MOSFET drives for synchronous rectified bridge
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ISL6625A
ISL6625A
ISL6625A,
5m-1994.
FN7978
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MTW8N60E-D
Abstract: MTW8N60E application notes AN569 MTW8N60E to-247AE
Text: MTW8N60E Preferred Device Power MOSFET 8 Amps, 600 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTW8N60E
r14525
MTW8N60E/D
MTW8N60E-D
MTW8N60E application notes
AN569
MTW8N60E
to-247AE
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ISL6364A
Abstract: No abstract text available
Text: Synchronous Rectified Buck MOSFET Drivers ISL6625A Features The ISL6625A is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. • Dual MOSFET drives for synchronous rectified bridge
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ISL6625A
ISL6625A
ISL6625A,
5m-1994.
FN7978
ISL6364A
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mosfet transistor 400 volts.100 amperes
Abstract: MTW8N60E
Text: MTW8N60E Preferred Device Power MOSFET 8 Amps, 600 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTW8N60E
O-247
r14525
MTW8N60E/D
mosfet transistor 400 volts.100 amperes
MTW8N60E
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MAX1614
Abstract: protection against interest current APP3472 2.2K resistor 17-uA an3472
Text: Maxim > App Notes > CIRCUIT PROTECTION Keywords: series protection, power switch, power MOSFET, transient protection Mar 23, 2005 APPLICATION NOTE 3472 Series Protection for Power-Line Transients Abstract: This application note describes a circuit that protects an n-channel power MOSFET against low and
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com/an3472
MAX1614:
AN3472,
APP3472,
Appnote3472,
MAX1614
protection against interest current
APP3472
2.2K resistor
17-uA
an3472
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Untitled
Abstract: No abstract text available
Text: FDD7N60NZ / FDU7N60NZTU N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 Ω Features Description • RDS on = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS
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FDD7N60NZ
FDU7N60NZTU
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PHILIPS MOSFET MARKING
Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET
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M3D088
BF1107
SCA59
115102/00/01/pp8
PHILIPS MOSFET MARKING
passive loopthrough
n channel depletion MOSFET
mosfet 5130
Q 817
mosfet K 2865
115102
4466 8 pin mosfet pin voltage
marking code 10 sot23
BF1107
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mosfet K 2865
Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET
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M3D088
BF1107
BF1107
SCA60
115102/00/02/pp8
mosfet K 2865
PHILIPS RF MOSFET depletion MARKING
PHILIPS MOSFET MARKING
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AOTF14N50
Abstract: AOT14N50
Text: AOT14N50 / AOTF14N50 500V, 14A N-Channel MOSFET General Description Features The AOT14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT14N50
AOTF14N50
AOT14N50
AOTF14N50
O-220
O-220F
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
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MRF1518T1
AN215A,
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AO4302
Abstract: No abstract text available
Text: AO4302 30V N-Channel MOSFET 30 General Description Product Summary The AO4302 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AO4302
AO4302
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AOT8N65
Abstract: Gate Turn-off 100A 750V
Text: AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT8N65/AOTF8N65
AOT8N65
AOTF8N65
O-220
O-220F
AOT8N65
Gate Turn-off 100A 750V
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AOTF10N65
Abstract: No abstract text available
Text: AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT10N65/AOTF10N65
AOT10N65
AOTF10N65
O-220
O-220F
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AN1001
Abstract: IRF1010 IRFB61N15D
Text: PD- 94207 IRFB61N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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IRFB61N15D
AN1001)
O-220AB
AN1001
IRF1010
IRFB61N15D
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IRFB61N15D
Abstract: AN1001 IRF1010
Text: PD- 94207 IRFB61N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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IRFB61N15D
AN1001)
O-220AB
IRFB61N15D
AN1001
IRF1010
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AOTF10N65L
Abstract: No abstract text available
Text: AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT10N65/AOTF10N65
AOT10N65
AOTF10N65
AOT10N65L
AOTF10N65L
O-220
O-220F
SymboAOTF10N65
AOTF10N65L
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AOTF14N50L
Abstract: AOB14N50 AOT14N50 AOTF14N50
Text: AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description Product Summary The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC
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AOT14N50/AOB14N50/AOTF14N50
AOT14N50
AOB14N50
AOTF14N50
AOT14N50L
AOTF14N50L
AOB14N50L
O-220
O-263
O-220F
AOTF14N50L
AOB14N50
AOT14N50
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250A
Abstract: 035H IRFPE30
Text: PD - 95662 IRFP17N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 0.28Ω 500V 170ns 16A • Motor Control applications
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IRFP17N50LPbF
170ns
O-247AC
IRFPE30
250A
035H
IRFPE30
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Untitled
Abstract: No abstract text available
Text: AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT8N65/AOTF8N65
AOT8N65
AOTF8N65
AOT8N65L
AOTF8N65L
O-220
O-220F
AOTF8N65
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Untitled
Abstract: No abstract text available
Text: AOT7N65/AOTF7N65 650V, 7A N-Channel MOSFET General Description Product Summary The AOT7N65 & AOTF7N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N65/AOTF7N65
AOT7N65
AOTF7N65
AOT7N65L
AOTF7N65L
O-220
O-220F
AOTF7N65
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defibrillator
Abstract: MOSFET 1000 VOLTS soft solder die bonding MSAFA1N100D MSAFA1N100DL
Text: 2830 S. Fairview Street Santa Ana, CA 92704 Phone: 714 979-8220 Fax: (714) 559-5989 DESCRIPTION: • • • • MSAFA1N100D Fast MOSFET Die for Implantable Cardio Defibrillator Applications N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um
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MSAFA1N100D
MSAFA1N100DL,
MSC1054
defibrillator
MOSFET 1000 VOLTS
soft solder die bonding
MSAFA1N100D
MSAFA1N100DL
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AOT8N65
Abstract: No abstract text available
Text: AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT8N65/AOTF8N65
AOT8N65
AOTF8N65
AOT8N65L
AOTF8N65L
O-220
O-220F
AOT8N65
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Untitled
Abstract: No abstract text available
Text: AOT9N65/AOTF9N65 650V,10A N-Channel MOSFET General Description Product Summary The AOT9N65 & AOTF9N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT9N65/AOTF9N65
AOT9N65
AOTF9N65
O-220
O-220F
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