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onsemi FDD7N60NZTM MOSFET N-CH 600V 5.5A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDD7N60NZTM	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	FDD7N60NZTM	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	FDD7N60NZTM	Digi-Reel			1	1 $1.24 10 $1.24 100 $1.24 1000 $1.24 10000 $1.24	Buy Now
Rochester Electronics	FDD7N60NZTM		322		1	1 $0.5408 10 $0.5408 100 $0.5084 1000 $0.4597 10000 $0.4597	Buy Now
Ameya Holding Limited	FDD7N60NZTM		5,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	FDD7N60NZTM				2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	FDD7N60NZTM			100 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Fairchild Semiconductor Corporation FDD7N60NZTM POWER FIELD-EFFECT TRANSISTOR, 5.5A I(D), 600V, 1.25OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FDD7N60NZTM		1,496			1 $1.931 10 $1.931 100 $1.931 1000 $0.7724 10000 $0.6759	Buy Now
ComSIT USA	FDD7N60NZTM		2,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FDD7N60NZ Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FDD7N60NZTM		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 5.5A DPAK-3		Original	PDF

FDD7N60NZ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: UniFET-II FDD7N60NZ / FDU7N60NZ TM N-Channel MOSFET 600V, 5.5A, 1.25 Features Description • RDS on = 1.05 ( Typ.)@ VGS = 10V, ID = 2.75A • Low Gate Charge ( Typ. 13nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,	Original	PDF	FDD7N60NZ FDU7N60NZ
Untitled Abstract: No abstract text available Text: FDD7N60NZ / FDU7N60NZTU N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 Ω Features Description • RDS on = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS	Original	PDF	FDD7N60NZ FDU7N60NZTU
FDU7N60 Abstract: FDD7N60n FDD7N60NZ FDU7N60NZ Text: FDD7N60NZ / FDU7N60NZ N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25  Features Description • RDS on = 1.05  (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state	Original	PDF	FDD7N60NZ FDU7N60NZ FDU7N60NZ FDU7N60 FDD7N60n
FDU7N60 Abstract: FDD7N60NZ Text: UniFET-II FDD7N60NZ / FDU7N60NZ TM N-Channel MOSFET 600V, 5.5A, 1.25 Features Description • RDS on = 1.05 ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,	Original	PDF	FDD7N60NZ FDU7N60NZ FDU7N60NZ FDU7N60