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    MOSFET 30A 250V Search Results

    MOSFET 30A 250V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG250V2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 1700 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 30A 250V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MOSFET 1000v 30a

    Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
    Text: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package


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    OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 OM9027SP1 OM90Surge 300msec, MOSFET 1000v 30a 10A, 100v fast recovery diode OM9029SP1 OM9030SP1 diode 1000V 10a PDF

    induction heating Circuit

    Abstract: No abstract text available
    Text: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating


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    50V/500V PD4M441L PD4M440L PD4M441L 150iMAX 56i/W -441L -440L induction heating Circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE P2H4M441L / P2H4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating


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    50V/500V P2H4M441L P2H4M440L P2H4M441L 150MAX -441L -440L PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Cascaded Circuit Dimension mm 108.0 * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating


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    50V/500V PD4M441L PD4M440L PD4M441L 150MAX -441L -440L PDF

    450v 15a mosfet

    Abstract: 440L PD4M440L PD4M441L Mosfet 30A 250V
    Text: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Cascaded Circuit Dimension mm 108.0 * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating


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    PD4M441L PD4M440L 50V/500V PD4M441L Tem100 150MAX 450v 15a mosfet 440L PD4M440L Mosfet 30A 250V PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating


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    PD4M441L PD4M440L 50V/500V PD4M441L -441L -440L PDF

    Mosfet 30A 250V

    Abstract: No abstract text available
    Text: MOSFET MODULE P2H4M441L / P2H4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating


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    50V/500V P2H4M441L P2H4M440L P2H4M441L 150iMAX 56i/W -441L -440L Mosfet 30A 250V PDF

    induction heating Circuit

    Abstract: mosfet vgs 5v
    Text: MOSFET MODULE P2H4M441L / P2H4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating


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    50V/500V P2H4M441L P2H4M440L P2H4M441L induction heating Circuit mosfet vgs 5v PDF

    100pf,63v ceramic capacitor

    Abstract: 75 LS 541 100pf,63v BCX17 BCX19 IMAT5011 250v capacitor 4011 pinout
    Text: IMAT5011 500V 30A INTELLIGENT HALF BRIDGE POWER MOSFET MODULE PRODUCT DESCRIPTION The IMAT5011 is an isolated power MOSFET module with 2 switches connected in a half bridge configuration, with associated drivers, protections and isolation circuits. Each switch is connected with series and antiparallel fast recovery “soft” FREDs in order to inhibit the


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    IMAT5011 100KHz. board00 F-33700 6160xx1T2300 100pf,63v ceramic capacitor 75 LS 541 100pf,63v BCX17 BCX19 250v capacitor 4011 pinout PDF

    Mosfet 30A 250V

    Abstract: No abstract text available
    Text: MOSFET MODULE PD4M441H / PD4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible


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    50V/500V PD4M441H PD4M440H 300KHz PD4M441H 150iMAX 56i/W -441H -440H Mosfet 30A 250V PDF

    220g

    Abstract: No abstract text available
    Text: MOSFET MODULE P2H4M441H / P2H4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible


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    50V/500V P2H4M441H P2H4M440H 300KHz P2H4M441H 150iMAX 56i/W -441H -440H 220g PDF

    441H

    Abstract: PD4M440H PD4M441H
    Text: MOSFET MODULE PD4M441H / PD4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible


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    PD4M441H PD4M440H 50V/500V 300KHz PD4M441H 441H PD4M440H PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE P2H4M441H / P2H4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Separated Circuit Dimension mm 108.0 * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible


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    50V/500V P2H4M441H P2H4M440H 300KHz P2H4M441H -441H -440H PDF

    123B16

    Abstract: No abstract text available
    Text: Advance Technical Information Trench Gate HiperFET N-Channel Power MOSFET FMM50-025TF 3 3 Phase Leg Topology VDSS ID25 RDS on trr(typ) T1 55 = = ≤ = 250V 30A Ω 50mΩ 84ns 4 4 T2 1 1 ISOPLUS i4-PakTM 22 Symbol Test Conditions TJ TJM Tstg Maximum Ratings


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    FMM50-025TF 50/60HZ, 338B2 123B16 PDF

    Untitled

    Abstract: No abstract text available
    Text: AP30N30WI Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Simple Drive Requirement ▼ Lower On-resistance 250V RDS ON 68mΩ ID G ▼ RoHS Compliant BVDSS 30A S Description AP30N30 from APEC provide the designer with the best combination


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    AP30N30WI AP30N30 100ms PDF

    21C25

    Abstract: Mosfet 30A 250V
    Text: MOSFET 30A 450~ 450~500V PD4M441L/440L PD4M441L P2H4M441L PD4M440L P2H4M440L P2H4M441L/440L 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage


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    50500V PD4M441L/440L PD4M441L PD4M440L P2H4M441L P2H4M440L P2H4M441L/440L PD4M441L/P2H4M441L PD4M440L/P2H4M440L 150iMAX 21C25 Mosfet 30A 250V PDF

    nf-810

    Abstract: No abstract text available
    Text: MOSFET 30A 450~ 450~500V PD4M441L/440L PD4M441L P2H4M441L PD4M440L P2H4M440L P2H4M441L/440L 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage


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    50500V PD4M441L/440L PD4M441L PD4M440L P2H4M441L P2H4M440L P2H4M441L/440L PD4M441L/P2H4M441L PD4M440L/P2H4M440L nf-810 PDF

    STW26NM50FD

    Abstract: STW26NM50F 500v ZENER DIODE ZVS phase-shift converters schematic diagram welding device
    Text: STW26NM50FD N-CHANNEL 500V - 0.10Ω - 30A TO-247 FDmesh Power MOSFET with FAST DIODE TARGET DATA TYPE STW26NM50FD • ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.12Ω 30 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED


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    STW26NM50FD O-247 STW26NM50FD STW26NM50F 500v ZENER DIODE ZVS phase-shift converters schematic diagram welding device PDF

    IXTH30N50L2

    Abstract: No abstract text available
    Text: IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 LinearL2TM Power MOSFET w/ Extended FBSOA D O VDSS ID25 = 500V = 30A  215m  RDS on D TO-268 (IXTT) N-Channel Enhancement Mode RGi G G ww O S O S D (Tab) TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS


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    IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 O-268 IXTH30N50L2 100ms 30N50L2 PDF

    FMM50

    Abstract: No abstract text available
    Text: Preliminary Technical Information Trench Gate HiperFET Power MOSFET FMM50-025TF 3 3 Phase Leg Topology VDSS ID25 RDS on trr(typ) T1 55 = = ≤ = 250V 30A Ω 60mΩ 84ns 4 4 T2 N-Channel 1 1 ISOPLUS i4-PakTM 22 Symbol Test Conditions TJ TJM Tstg VISOLD 50/60HZ, RMS, t = 1min, Leads-to-Tab


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    FMM50-025TF 50/60HZ, 338B2 FMM50 PDF

    nf-810

    Abstract: No abstract text available
    Text: MOSFET 30A 450~ 450~500V PD4M441L/440L PD4M441L P2H4M441L PD4M440L P2H4M440L P2H4M441L/440L 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS


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    50500V PD4M441L/440L PD4M441L PD4M440L P2H4M441L P2H4M440L P2H4M441L/440L PD4M441L/P2H4M441L PD4M440L/P2H4M440L nf-810 PDF

    Untitled

    Abstract: No abstract text available
    Text: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package


    OCR Scan
    OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 300/jsec, PDF

    POWER MOSFET Rise Time 1000V NS

    Abstract: MOSFET 1000v 30a inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 OM9Q27SP1
    Text: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • M O S F E T And Common Cathode Rectifier In O ne Package


    OCR Scan
    OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 300/jsec, 100-TYP. 205Crawford 00011b3 POWER MOSFET Rise Time 1000V NS MOSFET 1000v 30a inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A OM9028SP1 OM9030SP1 OM9Q27SP1 PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced IMAT5011 500V 30A P o w er T e c h n o l o g y INTELLIGENT HALF BRIDGE POWER MOSFET MODULE PRODUCT DESCRIPTION The IMAT5011 is an isolated power MOSFET module with 2 switches connected in a half bridge configura­ tion, with associated drivers, protections and isolation circuits.


    OCR Scan
    IMAT5011 100KHz. 200nm 6160xx1T2300 F-33700 GGG121S PDF