MOSFET 30A 250V Search Results

MOSFET 1000v 30a

Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
Contextual Info: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package

Contextual Info: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package

POWER MOSFET Rise Time 1000V NS

Abstract: MOSFET 1000v 30a inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 OM9Q27SP1
Contextual Info: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • M O S F E T And Common Cathode Rectifier In O ne Package

induction heating Circuit

Contextual Info: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

Contextual Info: MOSFET MODULE P2H4M441L / P2H4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

Contextual Info: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Cascaded Circuit Dimension mm 108.0 * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

450v 15a mosfet

Abstract: 440L PD4M440L PD4M441L Mosfet 30A 250V
Contextual Info: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Cascaded Circuit Dimension mm 108.0 * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

Contextual Info: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

Mosfet 30A 250V

Contextual Info: MOSFET MODULE P2H4M441L / P2H4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

induction heating Circuit

Abstract: mosfet vgs 5v
Contextual Info: MOSFET MODULE P2H4M441L / P2H4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

100pf,63v ceramic capacitor

Abstract: 75 LS 541 100pf,63v BCX17 BCX19 IMAT5011 250v capacitor 4011 pinout
Contextual Info: IMAT5011 500V 30A INTELLIGENT HALF BRIDGE POWER MOSFET MODULE PRODUCT DESCRIPTION The IMAT5011 is an isolated power MOSFET module with 2 switches connected in a half bridge configuration, with associated drivers, protections and isolation circuits. Each switch is connected with series and antiparallel fast recovery “soft” FREDs in order to inhibit the

Mosfet 30A 250V

Contextual Info: MOSFET MODULE PD4M441H / PD4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible

220g

Contextual Info: MOSFET MODULE P2H4M441H / P2H4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible

Contextual Info: A dvanced IMAT5011 500V 30A P o w er T e c h n o l o g y INTELLIGENT HALF BRIDGE POWER MOSFET MODULE PRODUCT DESCRIPTION The IMAT5011 is an isolated power MOSFET module with 2 switches connected in a half bridge configura­ tion, with associated drivers, protections and isolation circuits.

Contextual Info: MOSFET MODULE P2H4M441H / P2H4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Separated Circuit Dimension mm 108.0 * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible

123B16

Contextual Info: Advance Technical Information Trench Gate HiperFET N-Channel Power MOSFET FMM50-025TF 3 3 Phase Leg Topology VDSS ID25 RDS on trr(typ) T1 55 = = ≤ = 250V 30A Ω 50mΩ 84ns 4 4 T2 1 1 ISOPLUS i4-PakTM 22 Symbol Test Conditions TJ TJM Tstg Maximum Ratings

Contextual Info: AP30N30WI Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET  100% Avalanche Test D  Simple Drive Requirement  Lower On-resistance 250V RDS ON 68m ID G  RoHS Compliant BVDSS 30A S Description AP30N30 from APEC provide the designer with the best combination

Contextual Info: AP30N30WI Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Simple Drive Requirement ▼ Lower On-resistance 250V RDS ON 68mΩ ID G ▼ RoHS Compliant BVDSS 30A S Description AP30N30 from APEC provide the designer with the best combination

21C25

Abstract: Mosfet 30A 250V
Contextual Info: MOSFET 30A 450～ 450～500V PD4M441L/440L PD4M441L P2H4M441L PD4M440L P2H4M440L P2H4M441L/440L 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage

nf-810

Contextual Info: MOSFET 30A 450～ 450～500V PD4M441L/440L PD4M441L P2H4M441L PD4M440L P2H4M440L P2H4M441L/440L 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage

STW26NM50FD

Abstract: STW26NM50F 500v ZENER DIODE ZVS phase-shift converters schematic diagram welding device
Contextual Info: STW26NM50FD N-CHANNEL 500V - 0.10Ω - 30A TO-247 FDmesh Power MOSFET with FAST DIODE TARGET DATA TYPE STW26NM50FD • ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.12Ω 30 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

IXTH30N50L2

Contextual Info: IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 LinearL2TM Power MOSFET w/ Extended FBSOA D O VDSS ID25 = 500V = 30A  215m  RDS on D TO-268 (IXTT) N-Channel Enhancement Mode RGi G G ww O S O S D (Tab) TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS

FMM50

Contextual Info: Preliminary Technical Information Trench Gate HiperFET Power MOSFET FMM50-025TF 3 3 Phase Leg Topology VDSS ID25 RDS on trr(typ) T1 55 = = ≤ = 250V 30A Ω 60mΩ 84ns 4 4 T2 N-Channel 1 1 ISOPLUS i4-PakTM 22 Symbol Test Conditions TJ TJM Tstg VISOLD 50/60HZ, RMS, t = 1min, Leads-to-Tab

nf-810

Contextual Info: MOSFET 30A 450～ 450～500V PD4M441L/440L PD4M441L P2H4M441L PD4M440L P2H4M440L P2H4M441L/440L 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS