MOSFET 3055 Search Results

IXDD 614

Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
Contextual Info: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers

HIP4080 amplifier circuit diagram class D

Abstract: class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A
Contextual Info: No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an

class d amplifier schematic hip4080

Abstract: HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V HIP2060 MO-169AB
Contextual Info: TM No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an

class d amplifier schematic hip4080

Abstract: hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S HIP2060 mosfet L 3055 high power fet audio amplifier schematic
Contextual Info: Harris Semiconductor No. AN9539 Harris Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an

3055V

Abstract: paste AN569 MTD3055V MTD3055V1 MTD3055VT4 t3055v
Contextual Info: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

Contextual Info: FDMS86150 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

3055V

Abstract: MTD3055VT4 MTD3055V 369D AN569
Contextual Info: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

t3055vl

Abstract: T30-55VL 3055vl MTD3055VL1 3055V AN569 MTD3055VL MTD3055VLT4
Contextual Info: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

MTD3055V

Abstract: mosfet DPAK
Contextual Info: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

3055L transistor

Abstract: Mosfet Sot223
Contextual Info: [ /Title RFT30 55LE /Subject (2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET) /Author () /Keywords (Harris Sem,ico nductor, N-Channel, Logic Level, ESD Rated, Power MOSFET, SOT223) /Creator () /DOCIN RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel,

t3055vl

Abstract: 3055VL T30-55VL 418B-03 5M MARKING CODE DIODE SMC MTD3055VLT4
Contextual Info: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

3055VL

Abstract: MTD3055VLT4 MTD3055VL
Contextual Info: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK−3 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

Contextual Info: FDMS86150 N-Channel PowerTrench MOSFET 100 V, 60 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and

mosfet L 3055

Contextual Info: FDMS86150 N-Channel PowerTrench MOSFET 100 V, 60 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and

3055L

Abstract: TA49158
Contextual Info: integrai RFT3055LE D ata S hee t 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those ot LSI circuits, gives

3055L

Abstract: 3055LD spice model dc motor AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334 6428 n-channel
Contextual Info: RFT3055LE Data Sheet January 2002 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET Features • 2.0A, 60V This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives

Contextual Info: MMFT3055E Power MOSFET 1.7 Amp, 60 Volts N−Channel TMOS E−FETt SOT−223 This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source

MMFT3055E

Abstract: 2N3904 AN569 MMFT3055ET1 MMFT3055ET3
Contextual Info: MMFT3055E Power MOSFET 1.7 Amp, 60 Volts N−Channel TMOS E−FETt SOT−223 This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source

FT3055LE

Contextual Info: RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET July 1998 Features Description • 2.0A, 60V This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits, gives optimum

3055l

Abstract: 3055LD AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334 TA49158
Contextual Info: RFT3055LE Data Sheet Title FT3 5LE bt 0A, V, 50 m, 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET Features This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives

3055e

Abstract: RK3055E
Contextual Info: RK3055E Transistors 10V Drive Nch MOSFET RK3055E zStructure Silicon N-channel MOSFET zDimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.75 (1) (2)Drain 0.8Min. 0.65 0.9 (1)Gate 9.5 2.5 0.9 1.5 5.5 1.5 zFeatures 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area).

3055L

Abstract: f 3055l sot89 Marking mosfet fr5 sot89 FHK3055L sot89 17
Contextual Info: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK3055L N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-89 High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻 Rugged and reliable. 高可靠性

Contextual Info: BSP17/3055 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V) I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)

CHM3055LXGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM3055LXGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE