MOSFET 2000V Search Results

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

mosfet 1200V

Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V

AUIRF7319Q

Abstract: 96364B 8763A
Contextual Info: PD - 96364B AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET

Contextual Info: PD - 96364B AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET

CMF20120D

Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode

p-channel 250V 30A power mosfet

Abstract: AUIRF7379Q
Contextual Info: PD - 96366B AUTOMOTIVE MOSFET AUIRF7379Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified

Contextual Info: PD - 96366B AUTOMOTIVE MOSFET AUIRF7379Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified

Contextual Info: WTX1013 P-Channel 1.8-V G-S MOSFET P b Lead(Pb)-Free 3 FEATURES: 1 * TrenchFET@ Power MOSFET: 1.8-V Rated * Gate-Source ESD Protected: 2000V * High-Side Switching * Low On-Resistance: 1.2Ω * Low Threshold: 0.8 V (typ) * Fast Switching Speed: 14 ns * S-Prefix for Automotive and Other Applications Requiring

8E-10

Abstract: FDM3300NZ TC146
Contextual Info: FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on

Contextual Info: FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on

Contextual Info: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES 2009. 11. 17 Revision No : 2 1/4

Contextual Info: SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES 2011. 4. 4 Revision No : 1 1/3

Contextual Info: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES 2009. 11. 17 Revision No : 1 1/4

KP 4 E4

Abstract: KP82
Contextual Info: FDM3300NZ tm Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on

Mosfet

Abstract: 2N7002KU
Contextual Info: 2N7002KU 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS on 3Ω(max.) ID 0.3A SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and

Contextual Info: 40V 2.5A Buck Controller with Integrated High-Side MOSFET ISL78206 Features The ISL78206 is an AEC Q100 qualified 40V, 2.5A synchronous buck controller with a high-side MOSFET and low-side driver integrated. The ISL78206 supports a wide input voltage range

ISL89163FBEAZ

Contextual Info: High Speed, Dual Channel, 6A, Power MOSFET Driver with Enable Inputs ISL89163, ISL89164, ISL89165 Features The ISL89163, ISL89164, and ISL89165 are high-speed, 6A, dual channel MOSFET drivers with enable inputs. These parts are very similar to the ISL89160, ISL89161, ISL89162 drivers but

MTN7002ZHS3

Abstract: T1091 17025 mosfet reliability testing report On semiconductor power MOSFET reliability report MTN7 1000V power MOSFET reliability report marking no19 sot-23
Contextual Info: CYStech Electronics Corp. Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 1/7 N-CHANNEL MOSFET MTN7002ZHS3 Description The MTN7002ZHS3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching

Contextual Info: PD - 96365B AUIRF7316Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free, RoHS Compliant

Contextual Info: High Speed, Dual Channel, 6A, Power MOSFET Driver with Enable Inputs ISL89163, ISL89164, ISL89165 Features The ISL89163, ISL89164, and ISL89165 are high-speed, 6A, dual channel MOSFET drivers with enable inputs. These parts are very similar to the ISL89160, ISL89161, ISL89162 drivers but

Contextual Info: High Speed, Dual Channel, 6A, 4.5 to 16VOUT, Power MOSFET Drivers ISL89160, ISL89161, ISL89162 Features The ISL89160, ISL89162, and ISL89162 are high-speed, 6A, dual channel MOSFET drivers. These parts are identical to the ISL89163, ISL89164, ISL89165 drivers but without the enable

Contextual Info: High Speed, Dual Channel, 6A, 4.5 to 16VOUT, Power MOSFET Drivers ISL89160, ISL89161, ISL89162 Features The ISL89160, ISL89161, and ISL89162 are high-speed, 6A, dual channel MOSFET drivers. These parts are identical to the ISL89163, ISL89164, ISL89165 drivers but without the enable

3004x

Contextual Info: High Speed, Dual Channel, 6A, 4.5 to 16VOUT, Power MOSFET Driver ISL89160, ISL89161, ISL89162 Features The ISL89160, ISL89162, and ISL89162 are high-speed, 6A, dual channel MOSFET drivers. These parts are identical to the ISL89163, ISL89164, ISL89165 drivers but without the enable

asme

Abstract: 200V AUTOMOTIVE MOSFET AUIRF7316QTR
Contextual Info: PD - 96365B AUIRF7316Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free, RoHS Compliant