KP82 Search Results

Contextual Info: KP823C03 5A (30V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) 0.9 Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics

KP823C04

Contextual Info: KP823C09 5A (90V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE Features JEDEC Surface mount device Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 4 1 3 Maximum ratings and characteristics

Contextual Info: KP823C04I5A * > 3 'y M r — / < y 7 ¥ <4 * — K SCHOTTKY BARRIER DIODE : Features • tV F Low V f C onnection D iagram Super high speed sw itching. High reliability by planer design. i— N — | > i A p p lica tio n s r t— i) D (D High speed pow er sw itching.

Contextual Info: KP823C03 5A (30V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) 0.9 Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics

ESAB82-004

Abstract: ESAB82M-004 ESAB82M-006 ESAB85-009 KP823C04 KS823C04 TP801C04 TP801C06 YG801C04 YG801C06
Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Type M axim um ratin§ V lo rrm Volts KS823C04 40 KP823C04 40 40 If s h # 2 *1 Am ps. Am ps. 5.0 Tc=87°C 5.0 Tc=87°C) 5.0 Tc=103°C) Therm al rating Tj and Tstg °c -40 t o +125 Characteristics Ta=25°C)

KP823C04

Contextual Info: KP823C04 5A • Outline Drawing SCHOTTKY BARRIER DIODE 6.5(0.26)1 5 (0.20) ws o. 2.3 (0.09) 0.5 (0.02) (0.22) ' j If) L h* o 5T oj © «0 LO 0.9 (0.04) J® 2.3 (0.09) Hi 0.6 fO.02) ‘2.3 (0.09Ï 05(0.02) 1.1 (0.04) K-PACK ■ Marking ■ Features

KP823C04

Contextual Info: KP823C04 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) 0.9 Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics

Contextual Info: M/m 5? 4 yJj.TJL' m — K / Rectifier Diodes JfelS» ir m 2 in one-package a Devieetype KS823C04 T a=2£C Therm«! rating Characteristics • *3 lFSM*a Tj and Tstg Max. Volts Max.mA Amps. r SMP t f f t A Maximum ratiog VftRM k ) * 1 Volts Amps. SMD KP823C04

A414

Abstract: KP823C04
Contextual Info: KP823C04I5A * > 3 'y M r — / < y 7 ¥ <4 * — K SCHOTTKY BARRIER DIODE : Features • tV F Low V f Connection Diagram Super high speed sw itching. High reliability by planer design. i— N — | > i Applications r t— i) D (D High speed pow er sw itching.

ko48

Contextual Info: KP823C0415A ' <y K SCHOTTKY BARRIER DIODE • 4 # ^ : I Features • te V F Low V f Connection Diagram Super high speed sw itching. High reliability by planer design. r* h > ! Applications H 4 - n © High speed pow er s w itc h in g . : M a xim u m Ratings and Characteristics

KP823C04

Contextual Info: KP823C04 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) 0.9 Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics

Contextual Info: KP823C04 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE K-Pack(L) 0.9 Features JEDEC Low VF EIAJ Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 2 1 3 Maximum ratings and characteristics

Contextual Info: KP823C04 5A Outline Drawing SCHOTTKY BARRIER DIODE 6.S (0.26) 2.3 (0.09) 0.5 (0.02) 5 (0.20) • 0.9 (0.Ö4)1 «0 V®i 2.3 (0.09) 0.6 (0,02) 05(0.02) 2.3 (0,09) 1.1 (0.04) K-PACK Marking • Features • Lo w V f • Super high speed switching • High reliability by planer design

KP823C04

Abstract: T151 SA003
Contextual Info: KP823C04I5A '> 3 -y <U T ¥ -4 * — K • * » ■ * » i Outline D raw ings SCHOTTKY BARRIER : Features • I& V f Low V f m m m m m C onnection Diagram Super high speed sw itching. • :7 V — ttfls tc is fc fiiite High reliability by planer design r * ir ^ i

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

L510B

Abstract: 7550h HP10-71GE L1237 1PN 692 34 AE01K VHPX2-71 10F-15D HP10-65E 4147A
Contextual Info: N um erical Index Type Number Page A 0 9 0 C E N .225 A 1 1 2 A C N .225 A 1 1 2 B C N .225

KP4-25A

Abstract: KP-132
Contextual Info: Microwave Antennas 2.48 - 2 .7 GHz Continued T yp e N um ber D ia m e te r ft (m ) In p u t F la n g e s R e g u la to ry C o m p lia n c e t B o tto m G a in , d B i M id -B a n d Top B e a m w id th D e g re e s C ro s s Pol D is c ., dB F/B R a tio dB

Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

Contextual Info: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,

TL130

Abstract: tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004
Contextual Info: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009